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IRF6609TR1PBF

IRF6609TR1PBF
Mfr. #:
IRF6609TR1PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 20V N-CH HEXFET 2mOhms 46nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF6609TR1PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DirectFET-MT
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
31 A
Rds On - Drain-Source Resistance:
2.6 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
46 nC
Pd - Power Dissipation:
89 W
Configuration:
Single
Packaging:
Reel
Height:
0.7 mm
Length:
6.35 mm
Transistor Type:
1 N-Channel
Width:
5.05 mm
Brand:
Infineon / IR
Moisture Sensitive:
Yes
Product Type:
MOSFET
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
SP001532204
Tags
IRF6609TR1, IRF6609T, IRF6609, IRF660, IRF66, IRF6, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 20V 31A 7-Pin Direct-FET MT T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:25A; On Resistance, Rds(on):2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT ;RoHS Compliant: Yes
***ernational Rectifier
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
Part # Mfg. Description Stock Price
IRF6609TR1PBF
DISTI # IRF6609TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6609TR1PBF
    DISTI # IRF6609TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6609TR1PBF
      DISTI # IRF6609TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6609TR1PBF
        DISTI # 70018820        		Infineon Technologies AG20V N-CHANNEL HEXFET POWER MOSFET
        RoHS: Compliant        		0
        • 1000:$2.4300
        • 2000:$2.2300
        IRF6609TR1
        DISTI # 942-IRF6609TR1        		Infineon Technologies AGMOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
        RoHS: Not compliant        		0
          IRF6609TR1PBF
          DISTI # 942-IRF6609TR1PBF          		Infineon Technologies AGMOSFET 20V N-CH HEXFET 2mOhms 46nC
          RoHS: Compliant          		0
            IRF6609TR1PBF
            DISTI # 1436905            		Infineon Technologies AG 
            RoHS: Compliant            		0
            • 1:$4.6500
            • 10:$4.3600
            • 25:$3.9500
            • 50:$3.8100
            • 100:$3.6100
            • 250:$3.6100
            • 500:$3.4900
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            Mfr.#: IRF6609TRPBF

            OMO.#: OMO-IRF6609TRPBF-INFINEON-TECHNOLOGIES

            		 MOSFET 20V N-CH HEXFET 2mOhms 46nC
            Availability
            Stock:
            Available
            On Order:
            3500
            Enter Quantity:
            Current price of IRF6609TR1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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