MG1275S-BA1MM

MG1275S-BA1MM
Mfr. #:
MG1275S-BA1MM
Manufacturer:
Littelfuse
Description:
IGBT Modules 1200V 75A Dual
Lifecycle:
New from this manufacturer.
Datasheet:
MG1275S-BA1MM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
MG1275S-BA1MM more Information
Product Attribute
Attribute Value
Manufacturer:
Littelfuse
Product Category:
IGBT Modules
RoHS:
Y
Product:
IGBT Silicon Modules
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
1.8 V
Continuous Collector Current at 25 C:
105 A
Gate-Emitter Leakage Current:
100 nA
Pd - Power Dissipation:
630 W
Package / Case:
Package S
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Bulk
Series:
MG1275S
Brand:
Littelfuse
Mounting Style:
Chassis Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
100
Subcategory:
IGBTs
Unit Weight:
5.643834 oz
Tags
MG127, MG12, MG1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT MODULE 1200V 105A 630W S3
***
1200V 75A S-PACKAGE
***ark
Igbt Module, Dual Npn, 1.2Kv, 105A; Transistor Polarity:dual Npn; Dc Collector Current:105A; Collector Emitter Saturation Voltage Vce(On):1.8V; Power Dissipation Pd:630W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:7Pins Rohs Compliant: Yes
Silicon IGBT Power Modules
Littelfuse Silicon IGBT Power Modules ensure high efficiency and fast switching by combining simple MOSFET gate-drive with the high current and low saturation voltage switching capability of bipolar transistors. These features make them well-suited for a wide range of power conversion applications. In addition, the positive temperature coefficient of the modules allows for ease in paralleling to boost the current capability of the system. The modules are rated up to 1700V and 600A in industry standard packages and common topologies.
Part # Mfg. Description Stock Price
MG1275S-BA1MM
DISTI # F6495-ND
Littelfuse IncIGBT 1200V 105A 630W PKG S
RoHS: Compliant
Min Qty: 1
Container: Bulk
54In Stock
  • 25:$63.3600
  • 10:$67.2000
  • 1:$71.0400
MG1275S-BA1MM
DISTI # 576-MG1275S-BA1MM
Littelfuse IncIGBT Modules 1200V 75A Dual
RoHS: Compliant
79
  • 1:$65.2900
  • 5:$64.0900
  • 10:$61.4400
  • 25:$59.5200
  • 50:$57.6000
  • 100:$54.9200
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    Availability
    Stock:
    78
    On Order:
    2061
    Enter Quantity:
    Current price of MG1275S-BA1MM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $65.29
    $65.29
    5
    $64.09
    $320.45
    10
    $61.44
    $614.40
    25
    $59.52
    $1 488.00
    50
    $57.60
    $2 880.00
    100
    $54.92
    $5 492.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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