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AOTF11S60L

AOTF11S60L
Mfr. #:
AOTF11S60L
Manufacturer:
Alpha & Omega Semiconductor Inc
Description:
MOSFET N-CH 600V 11A TO220F
Lifecycle:
New from this manufacturer.
Datasheet:
AOTF11S60L Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
AOTF11S60, AOTF11S, AOTF11, AOTF1, AOTF, AOT
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F
***i-Key
MOSFET N-CH 600V 11A TO220-3F
*** Electronics
MOSFET N-CH 600V 11A TO220F
***el Electronic
DC DC CONVERTER 0.8-6V 3A
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F
***ure Electronics
Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F
*** Stop Electro
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220F; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***th Star Micro
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @Tj = 150C Typ. Rds(on)=0.32W Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***ure Electronics
FCP Series 600 V 380 mOhm 36 W Through Hole N-channel SUPERFET® Mosfet - TO-220F
***r Electronics
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:16.7mJ; Pin Configuration:1(G), 2(D), 3(S); Power, Pd:125W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 9A, TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:27A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
*** Source Electronics
MOSFET N-CH 600V 13A TO-220FP / Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
N-Channel 600 V 285 mO 35 nC Flange Mount MDmesh™ II Power Mosfet - TO-220FP
***enic
600V 13A 30W 285m´Î@10V6.5A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***va Crawler
N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package
***et
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STP14NK60 Series 600 V 13.5 A 0.5 Ohm N-Ch Power MOSFET - TO-220FPAB
***r Electronics
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 13.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***ark
Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
***ure Electronics
N-Channel 500 V 340 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
***icroelectronics
N-Channel 500V - 0.30 Ohm - 14A Zener-Protected SuperMESH(TM) POWER MOSFET
***ical
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220FP Tube
***eco
MOSFET 500V 0.30 OHM 14A, TO 220 ISO FULL PACK IN LINE
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 40 W
***(Formerly Allied Electronics)
MOSFET N-Ch 500V 14A SuperMESH TO220FP
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***r Electronics
Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part # Mfg. Description Stock Price
AOTF11S60L
DISTI # V36:1790_07841436		Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F
RoHS: Compliant		959
  • 100:$1.4007
  • 25:$1.4979
  • 10:$1.6529
  • 1:$2.0402
AOTF11S60L
DISTI # AOTF11S60L-ND		Alpha & Omega SemiconductorMOSFET N-CH 600V 11A TO220F
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.9425
AOTF11S60L
DISTI # 25690950		Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F
RoHS: Compliant		959
  • 8:$2.0402
Image Part # Description
AOTF11N62

Mfr.#: AOTF11N62

OMO.#: OMO-AOTF11N62-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 620V 11A TO220F
AOTF10N50FD TF10N50FD

Mfr.#: AOTF10N50FD TF10N50FD

OMO.#: OMO-AOTF10N50FD-TF10N50FD-1190

 New and Original
AOTF10N60L

Mfr.#: AOTF10N60L

OMO.#: OMO-AOTF10N60L-1190

 New and Original
AOTF11S60(TF11S60)

Mfr.#: AOTF11S60(TF11S60)

OMO.#: OMO-AOTF11S60-TF11S60--1190

 New and Original
AOTF12N30

Mfr.#: AOTF12N30

OMO.#: OMO-AOTF12N30-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 300V 11.5A TO220F
AOTF12N50,AOTF20C60,

Mfr.#: AOTF12N50,AOTF20C60,

OMO.#: OMO-AOTF12N50-AOTF20C60--1190

 New and Original
AOTF12N60FD_001

Mfr.#: AOTF12N60FD_001

OMO.#: OMO-AOTF12N60FD-001-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 600V TO220F
AOTF15S65

Mfr.#: AOTF15S65

OMO.#: OMO-AOTF15S65-1190

 New and Original
AOTF10T60L

Mfr.#: AOTF10T60L

OMO.#: OMO-AOTF10T60L-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 600V 10A TO220F
AOTF18N65 TF18N65

Mfr.#: AOTF18N65 TF18N65

OMO.#: OMO-AOTF18N65-TF18N65-1190

 New and Original
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of AOTF11S60L is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.91
$1.91
10
$1.82
$18.19
100
$1.72
$172.30
500
$1.63
$813.65
1000
$1.53
$1 531.60
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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