VN3205N3-G

Mfr. #:: VN3205N3-G
Manufacturer:: Microchip Technology
Description:: MOSFET 50V 0.3Ohm
Lifecycle:: New from this manufacturer.
Datasheet:: VN3205N3-G Datasheet
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More Information:: VN3205N3-G more Information VN3205N3-G Product Details

Product Attribute
Attribute Value

Manufacturer:: Microchip

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-92-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 50 V

Id - Continuous Drain Current:: 1.2 A

Rds On - Drain-Source Resistance:: 300 mOhms

Vgs th - Gate-Source Threshold Voltage:: 800 mV

Vgs - Gate-Source Voltage:: 10 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Bulk

Height:: 5.33 mm

Length:: 5.21 mm

Transistor Type:: 1 N-Channel

Type:: FET

Width:: 4.19 mm

Brand:: Microchip Technology

Forward Transconductance - Min:: 1 S

Fall Time:: 25 ns

Product Type:: MOSFET

Rise Time:: 15 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 25 ns

Typical Turn-On Delay Time:: 10 ns

Unit Weight:: 0.016000 oz

Tags: VN3205N3-G, VN3205N3, VN3205N, VN3205, VN320, VN32, VN3

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VN3205N3-G Description

***th Star Micro: Transistor MOSFET N-CH 50V 1.2A 3-Pin TO-92

***ure Electronics: VN3205 Series 50 V 1.2 A N-Channel Enhancement-Mode Vertical DMOS FETs - TO-92-3

***ark: Mosfet, N-Ch, 50V, 1.2A, 150Deg C, 1W; Transistor Polarity:n Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):0.3Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

*** Stop Electro: Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***ure Electronics: N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92

***ponent Sense: Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line

***ark: Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET N-Channel 60V 1.1A E-Line

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ment14 APAC: MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: N-Channel 60 V 0.33 Ohm Through Hole Enhancement Mode DMOS FET - TO-92

***ical: Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.33Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:3Pinsrohs Compliant: No

***(Formerly Allied Electronics): MOSFET P-ch 50V 0.175A 10R 0.625W E-Line

***ark: P CHANNEL MOSFET, -50V, 175mA TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:170mA; Drain Source Voltage, Vds:-50V; On Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:-5V; Threshold Voltage, Vgs Typ:-2V ;RoHS Compliant: Yes

***nell: MOSFET, P E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 625mW; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 1.27mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 500mA

***p One Stop Global: Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R

***el Electronic: Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***et Europe: Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***r Electronics: Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***p One Stop Global: Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***el Electronic: Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Market price

Part #	Mfg.	Description	Stock	Price
VN3205N3-G DISTI # V99:2348_06516015	Microchip Technology Inc	Trans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag RoHS: Compliant	304	100:$0.9040 25:$0.9952 10:$1.1652 1:$1.1903
VN3205N3-G DISTI # VN3205N3-G-ND	Microchip Technology Inc	MOSFET N-CH 50V 1.2A TO92-3 RoHS: Compliant Min Qty: 1 Container: Bag	1298In Stock	100:$0.9682 25:$1.0608 1:$1.2800
VN3205N3-G-P002 DISTI # VN3205N3-G-P002-ND	Microchip Technology Inc	MOSFET N-CH 50V 1.2A TO92-3 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$1.0300
VN3205N3-G DISTI # 23961797	Microchip Technology Inc	Trans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag RoHS: Compliant	1475	100:$0.6273 99:$0.6482
VN3205N3-G DISTI # 19131372	Microchip Technology Inc	Trans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag RoHS: Compliant	500	500:$0.8813
VN3205N3-G DISTI # 25853408	Microchip Technology Inc	Trans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag RoHS: Compliant	304	100:$0.9040 25:$0.9990 10:$1.1652
VN3205N3-G DISTI # PL602-20-K52TC	Microchip Technology Inc	Trans MOSFET N-CH 50V 1.2A 3-Pin TO-92 Bag - Bag (Alt: PL602-20-K52TC) RoHS: Compliant Min Qty: 360 Container: Bag	Americas - 0	360:$1.8900 400:$1.8900 760:$1.7900 1800:$1.7900 3600:$1.6900
VN3205N3-G-P002 DISTI # VN3205N3-G-P002	Microchip Technology Inc	Trans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R - Tape and Reel (Alt: VN3205N3-G-P002) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$0.7099 4000:$0.6859 8000:$0.6639 12000:$0.6439 20000:$0.6339
VN3205N3-G DISTI # 55AC4283	Microchip Technology Inc	D-MOSFET, N-CH, 1.2A, 50V, TO-92-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.2A,Drain Source Voltage Vds:50V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,Power RoHS Compliant: Yes	959	1:$1.2200 25:$1.0100 100:$0.9180
VN3205N3-G-P002 DISTI # 53Y4339	Microchip Technology Inc	MOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 Ohm3 TO-92 RVT/R	0	1:$1.3600 25:$1.1300 100:$1.0300
VN3205N3-G DISTI # 70451402	Microchip Technology Inc	MOSFET,N-CHANNEL ENHANCEMENT-MODE,50V,0.3 Ohm3 TO-92BAG RoHS: Compliant	684	1:$2.2700 10:$1.9700 25:$1.6900 100:$1.5300
VN3205N3-G-P002 DISTI # 70483897	Microchip Technology Inc	MOSFET,N-CHANNEL ENHANCEMENT-MODE,50V,0.3 Ohm3 TO-92RVT/R RoHS: Compliant	0	2000:$0.9800
VN3205N3-G DISTI # 689-VN3205N3-G	Microchip Technology Inc	MOSFET 50V 0.3Ohm RoHS: Compliant	2086	1:$1.2800 10:$1.2600 25:$1.0700 100:$0.9690
VN3205N3 DISTI # 689-VN3205N3	Microchip Technology Inc	MOSFET 50V 0.3Ohm RoHS: Not compliant	0
VN3205N3-G-P002 DISTI # 689-VN3205N3-G-P002	Microchip Technology Inc	MOSFET N-CH Enhancmnt Mode MOSFET RoHS: Compliant	676	1:$1.3600 10:$1.3400 25:$1.1400 100:$1.0300
VN3205N3-G P014 DISTI # 689-VN3205N3-G-P014	Microchip Technology Inc	MOSFET N-CH Enhancmnt Mode MOSFET RoHS: Compliant	0	1:$1.5800 10:$1.3200 25:$1.1000 100:$1.0000 250:$0.8630 500:$0.7410 1000:$0.6450
VN3205N3-G P003 DISTI # 689-VN3205N3-G-P003	Microchip Technology Inc	MOSFET N-CH Enhancmnt Mode MOSFET RoHS: Compliant	0	1:$1.5800 10:$1.3200 25:$1.1000 100:$1.0000 250:$0.8630 500:$0.7410 1000:$0.6450
VN3205N3-G P005 DISTI # 689-VN3205N3-G-P005	Microchip Technology Inc	MOSFET N-CH Enhancmnt Mode MOSFET RoHS: Compliant	0
VN3205N3-G P013 DISTI # 689-VN3205N3-G-P013	Microchip Technology Inc	MOSFET N-CH Enhancmnt Mode MOSFET RoHS: Compliant	0
VN3205N3-G DISTI # VN3205N3-G	Microchip Technology Inc	MOSFETN-CHANNEL ENHANCEMENT-MODE50V0.3 Ohm RoHS: Compliant	2522	1000:$0.7800 100:$0.9400 26:$1.0300 1:$1.2400
VN3205N3-G-P002 DISTI # VN3205N3-G-P002	Microchip Technology Inc	MOSFETN-CHANNEL ENHANCEMENT-MODE50V0.3 Ohm RoHS: Compliant	10000	1000:$0.8300 100:$1.0000 26:$1.1000 1:$1.3200
VN3205N3-G	Microchip Technology Inc	RoHS: Compliant	1475 In Stock	2000:$0.5600 1000:$0.5800 500:$0.5900 100:$0.6000 50:$0.6200 40:$0.6300
VN3205N3-G DISTI # 2851592	Microchip Technology Inc	D-MOSFET, N-CH, 1.2A, 50V, TO-92-3 RoHS: Compliant	966	1:£0.9600 25:£0.7950 50:£0.7600 100:£0.7250 250:£0.7110
VN3205N3-G DISTI # VN3205N3G	Microchip Technology Inc		1475	40:$0.6300 50:$0.6200 100:$0.6000 500:$0.5900 1000:$0.5800 2000:$0.5600
VN3205N3-G DISTI # C1S505200898278	Microchip Technology Inc	Trans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag RoHS: Compliant	304	100:$0.9040 25:$0.9990 10:$1.1652
VN3205N3-G DISTI # C1S505200904047	Microchip Technology Inc	Trans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag RoHS: Compliant	778	100:$0.8656 25:$0.9440 10:$1.0958
VN3205N3-G DISTI # 2851592	Microchip Technology Inc	D-MOSFET, N-CH, 1.2A, 50V, TO-92-3 RoHS: Compliant	959	1:$2.0400 25:$1.7000 100:$1.5500

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VN3205N3-G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes