VN3205N3-G-P002

Mfr. #:: VN3205N3-G-P002
Manufacturer:: Microchip Technology
Description:: MOSFET N-CH Enhancmnt Mode MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: VN3205N3-G-P002 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: VN3205N3-G-P002 more Information VN3205N3-G-P002 Product Details

Product Attribute
Attribute Value

Manufacturer:: Microchip

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-92-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 50 V

Id - Continuous Drain Current:: 1.2 A

Rds On - Drain-Source Resistance:: 450 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 5.33 mm

Length:: 5.21 mm

Product:: MOSFET Small Signal

Transistor Type:: 1 N-Channel

Width:: 4.19 mm

Brand:: Microchip Technology

Fall Time:: 25 ns

Product Type:: MOSFET

Rise Time:: 15 ns

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 25 ns

Typical Turn-On Delay Time:: 10 ns

Unit Weight:: 0.016000 oz

Tags: VN3205N3-G, VN3205N3, VN3205N, VN3205, VN320, VN32, VN3

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VN3205N3-G-P002 Description

***ark: MOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 OHM 3 TO-92 RVT/R ROHS COMPLIANT: YES

***et: Trans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R

*** Stop Electro: Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***ure Electronics: N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92

***ponent Sense: Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line

***ark: Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET N-Channel 60V 1.1A E-Line

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ment14 APAC: MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: N-Channel 60 V 0.33 Ohm Through Hole Enhancement Mode DMOS FET - TO-92

***ical: Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.33Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:3Pinsrohs Compliant: No

***(Formerly Allied Electronics): MOSFET P-ch 50V 0.175A 10R 0.625W E-Line

***ark: P CHANNEL MOSFET, -50V, 175mA TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:170mA; Drain Source Voltage, Vds:-50V; On Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:-5V; Threshold Voltage, Vgs Typ:-2V ;RoHS Compliant: Yes

***nell: MOSFET, P E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 625mW; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 1.27mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 500mA

***p One Stop Global: Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R

***el Electronic: Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***et Europe: Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***r Electronics: Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***p One Stop Global: Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***el Electronic: Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Market price

Part #	Mfg.	Description	Stock	Price
VN3205N3-G-P002 DISTI # VN3205N3-G-P002-ND	Microchip Technology Inc	MOSFET N-CH 50V 1.2A TO92-3 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$1.0300
VN3205N3-G-P002 DISTI # VN3205N3-G-P002	Microchip Technology Inc	Trans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R - Tape and Reel (Alt: VN3205N3-G-P002) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$0.7099 4000:$0.6859 8000:$0.6639 12000:$0.6439 20000:$0.6339
VN3205N3-G-P002 DISTI # 53Y4339	Microchip Technology Inc	MOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 Ohm3 TO-92 RVT/R	0	1:$1.3600 25:$1.1300 100:$1.0300
VN3205N3-G-P002 DISTI # 70483897	Microchip Technology Inc	MOSFET,N-CHANNEL ENHANCEMENT-MODE,50V,0.3 Ohm3 TO-92RVT/R RoHS: Compliant	0	2000:$0.9800
VN3205N3-G-P002 DISTI # VN3205N3-G-P002	Microchip Technology Inc	MOSFETN-CHANNEL ENHANCEMENT-MODE50V0.3 Ohm RoHS: Compliant	10000	1000:$0.8300 100:$1.0000 26:$1.1000 1:$1.3200
VN3205N3-G-P002 DISTI # 689-VN3205N3-G-P002	Microchip Technology Inc	MOSFET N-CH Enhancmnt Mode MOSFET RoHS: Compliant	676	1:$1.3600 10:$1.3400 25:$1.1400 100:$1.0300

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VN3205N3-G-P002

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes