IPI80N06S3-07

IPI80N06S3-07
Mfr. #:
IPI80N06S3-07
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 55V 80A I2PAK-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPI80N06S3-07 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPI80N06S3-07 DatasheetIPI80N06S3-07 Datasheet (P4-P6)IPI80N06S3-07 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-262-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
6.8 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
135 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
9.45 mm
Length:
10.2 mm
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Infineon Technologies
Fall Time:
33 ns
Product Type:
MOSFET
Rise Time:
41 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
34 ns
Typical Turn-On Delay Time:
30 ns
Part # Aliases:
IPI80N06S307XK
Unit Weight:
0.084199 oz
Tags
IPI80N06S3, IPI80N06, IPI80N, IPI8, IPI
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
N-Channel 55 V 8A (Tc) 135W (Tc) Through Hole PG-TO262-3
***i-Key Marketplace
MOSFET N-CH 55V 80A TO262-3
*** Electronics
SMALL SIGNAL N-CHANNEL MOSFET
***el Nordic
Contact for details
Part # Mfg. Description Stock Price
IPI80N06S3-07
DISTI # IPI80N06S3-07IN-ND
Infineon Technologies AGMOSFET N-CH 55V 80A TO-262
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPI80N06S3-07
    DISTI # 726-IPI80N06S3-07
    Infineon Technologies AGMOSFET N-Ch 55V 80A I2PAK-3
    RoHS: Compliant
    0
      IPI80N06S3-07Infineon Technologies AGSmall Signal Field-Effect Transistor, 80A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Compliant
      2530
      • 1000:$0.5400
      • 500:$0.5700
      • 100:$0.5900
      • 25:$0.6200
      • 1:$0.6600
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      Mfr.#: IPI80N06S407AKSA1

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      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of IPI80N06S3-07 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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