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CSD19535KTTT

CSD19535KTTT
Mfr. #:
CSD19535KTTT
Description:
MOSFET 100V N-Channel NexFET Power MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
CSD19535KTTT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CSD19535KTTT more Information CSD19535KTTT Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
200 A
Rds On - Drain-Source Resistance:
3.4 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
75 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Height:
19.7 mm
Length:
9.25 mm
Series:
CSD19535KTT
Transistor Type:
1 N-Channel
Width:
10.26 mm
Brand:
Texas Instruments
Forward Transconductance - Min:
301 S
Fall Time:
15 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
21 ns
Typical Turn-On Delay Time:
9 ns
Unit Weight:
0.068643 oz
Tags
CSD19535, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
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***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
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MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D
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MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
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***el Electronic
Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***XS
This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
***
™
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Part # Description Stock Price
CSD19535KTTT
DISTI # 296-41135-1-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-6-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-2-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		1250In Stock
  • 250:$2.5784
  • 100:$2.8571
  • 50:$3.1358
CSD19535KTTT
DISTI # CSD19535KTTT		Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19535KTTT)
RoHS: Compliant
Min Qty: 200
Container: Reel		Americas - 0
  • 200:$1.7900
  • 300:$1.6900
  • 500:$1.5900
  • 1000:$1.5900
  • 2000:$1.4900
CSD19535KTTTCSD19535KTT 100 V N-Channel NexFET&#153,Power MOSFET1000
  • 1000:$1.4400
  • 750:$1.5100
  • 500:$1.7900
  • 250:$2.1000
  • 100:$2.2400
  • 25:$2.5600
  • 10:$2.7500
  • 1:$3.0500
CSD19535KTTT
DISTI # 595-CSD19535KTTT		MOSFET 100V N-Channel NexFET Power MOSFET
RoHS: Compliant		561
  • 1:$3.3500
  • 10:$3.0200
  • 50:$3.0200
  • 100:$2.4700
  • 250:$2.3100
  • 500:$2.1000
CSD19535KTT
DISTI # 595-CSD19535KTT		MOSFET CSD19535KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263
RoHS: Compliant		88
  • 1:$3.0200
  • 10:$2.7100
  • 100:$2.2200
  • 250:$2.0800
  • 500:$1.8900
CSD19535KTTT
DISTI # 9009885P		NEXFET N-CHANNEL MOSFET 100V 140A D2PAK, RL230
  • 10:£2.2000
  • 26:£2.1150
  • 50:£2.0300
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of CSD19535KTTT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.70
$3.70
10
$3.32
$33.20
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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