STGW60H65DFB

Mfr. #:: STGW60H65DFB
Manufacturer:: STMicroelectronics
Description:: IGBT 650V 80A 375W TO-247
Lifecycle:: New from this manufacturer.
Datasheet:: STGW60H65DFB Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STGW60H65DFB more Information STGW60H65DFB Product Details

Product Attribute
Attribute Value

Manufacturer: STMicroelectronics

Product Category: IGBTs - Single

Series: 600-650V IGBTs

Packaging: Tube

Unit-Weight: 1.340411 oz

Mounting-Style: Through Hole

Package-Case: TO-247-3

Input-Type: Standard

Mounting-Type: Through Hole

Supplier-Device-Package: TO-247

Configuration: Single

Power-Max: 375W

Reverse-Recovery-Time-trr: 60ns

Current-Collector-Ic-Max: 80A

Voltage-Collector-Emitter-Breakdown-Max: 650V

IGBT-Type: Trench Field Stop

Current-Collector-Pulsed-Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 60A

Switching-Energy: 1.09mJ (on), 626μJ (off)

Gate-Charge: 306nC

Td-on-off-25°C: 51ns/160ns

Test-Condition: 400V, 60A, 5 Ohm, 15V

Pd-Power-Dissipation: 375 W

Maximum-Operating-Temperature: + 175 C

Minimum-Operating-Temperature: - 55 C

Collector-Emitter-Voltage-VCEO-Max: 650 V

Collector-Emitter-Saturation-Voltage: 1.6 V

Continuous-Collector-Current-at-25-C: 80 A

Gate-Emitter-Leakage-Current: 250 nA

Maximum-Gate-Emitter-Voltage: 20 V

Continuous-Collector-Current-Ic-Max: 60 A

Tags: STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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STGW60H65DFB Description

***Components: In a Tube of 30, STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247

***ical: Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-3

***p One Stop Global: Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube

***ied Electronics & Automation: IGBT N-Ch 650V 60A High-Speed TO247

***ronik: IGBT 650V 80A 1,75V TO247-3

***i-Key: IGBT 650V 80A 375W TO-247

***ark: Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

***nell: IGBT, SINGOLO, 650V, 80A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)

STGW60H65DFB More Information

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

Part #	Mfg.	Description	Stock	Price
STGW60H65DFB DISTI # 497-14367-ND	STMicroelectronics	IGBT 650V 80A 375W TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1020:$2.7783 510:$3.2943 120:$3.8697 30:$4.4650 1:$5.2600
STGW60H65DFB-4 DISTI # STGW60H65DFB-4-ND	STMicroelectronics	IGBT RoHS: Not compliant Min Qty: 600 Container: Tube	Temporarily Out of Stock	600:$5.6963
STGW60H65DFB DISTI # STGW60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: STGW60H65DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€3.0400 10:€2.8000 100:€2.6800 250:€2.5700 500:€2.4600 1000:€2.0600
STGW60H65DFB DISTI # STGW60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW60H65DFB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$2.7900 1200:$2.6900 2400:$2.4900 3600:$2.3900 6000:$2.3900
STGW60H65DFB-4 DISTI # STGW60H65DFB-4	STMicroelectronics	PTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4) RoHS: Compliant Min Qty: 600 Container: Tray	Americas - 0	600:$5.1900 1200:$4.9900 2400:$4.6900 3600:$4.4900 6000:$4.3900
STGW60H65DFB DISTI # 511-STGW60H65DFB	STMicroelectronics	IGBT Transistors 600V 60A trench gate field-stop IGBT RoHS: Compliant	0	1:$5.0000 10:$4.2500 100:$3.6800 250:$3.4900 500:$3.1300 1000:$2.6400 2500:$2.5100
STGW60H65DFB-4 DISTI # 511-STGW60H65DFB-4	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed	0	1:$8.3300 10:$7.5300 25:$7.1800 100:$6.2300 250:$5.9600 500:$5.4300 1000:$4.7300
STGW60H65DFB DISTI # 2629740	STMicroelectronics	IGBT, SINGLE, 650V, 80A, TO-247-3 RoHS: Compliant	0	500:£2.0500 250:£2.2000 100:£2.3800 10:£2.6500 1:£3.2000
STGW60H65DFB-4 DISTI # 2778105	STMicroelectronics	IGBT, SINGLE, 650V, 80A, TO-247 RoHS: Compliant	100	100:£3.5600 50:£3.5700 10:£3.5800 5:£3.6300 1:£3.7000
STGW60H65DFB-4 DISTI # 2778105	STMicroelectronics	IGBT, SINGLE, 650V, 80A, TO-247 RoHS: Compliant	100	250:$8.0900 100:$8.6800 50:$9.7400 10:$10.8500 5:$12.2400 1:$14.0400
STGW60H65DFB-4 DISTI # XSFP00000113820	STMicroelectronics	Power Field-Effect Transistor, 11A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-263AB RoHS: Compliant	80 in Stock0 on Order	80:$11.0000 17:$12.1000

Related products

Image	Part #	Description
	Mfr.#: STGW60H65DFB OMO.#: OMO-STGW60H65DFB	IGBT Transistors 600V 60A trench gate field-stop IGBT
	Mfr.#: STGW60H65FB OMO.#: OMO-STGW60H65FB	IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT
	Mfr.#: STGW60H65DRF OMO.#: OMO-STGW60H65DRF	IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
	Mfr.#: STGW60H65DF OMO.#: OMO-STGW60H65DF	IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
	Mfr.#: STGW60V60F OMO.#: OMO-STGW60V60F	IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
	Mfr.#: STGW60H65F OMO.#: OMO-STGW60H65F	IGBT Transistors 60A 650V FST IGBT Very High Switching
	Mfr.#: STGW60V60F OMO.#: OMO-STGW60V60F-STMICROELECTRONICS	IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
	Mfr.#: STGW60H60DLFB OMO.#: OMO-STGW60H60DLFB-STMICROELECTRONICS	IGBT 600V 80A 375W TO-247
	Mfr.#: STGW60H65DF OMO.#: OMO-STGW60H65DF-STMICROELECTRONICS	IGBT 650V 120A 360W TO247
	Mfr.#: STGW60H65DFB-4 OMO.#: OMO-STGW60H65DFB-4-STMICROELECTRONICS	PTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)

Availability

Stock:: Available
On Order:: 1000
Enter Quantity:

Current price of STGW60H65DFB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.58~~; ~~$3.58~~

10: ~~$3.41~~; ~~$34.06~~

100: ~~$3.23~~; ~~$322.65~~

500: ~~$3.05~~; ~~$1 523.65~~

1000: ~~$2.87~~; ~~$2 868.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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STGW60H65DFB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes