IXFR64N60P

IXFR64N60P
Mfr. #:
IXFR64N60P
Manufacturer:
Littelfuse
Description:
MOSFET DIODE Id36 BVdass600
Lifecycle:
New from this manufacturer.
Datasheet:
IXFR64N60P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR64N60P DatasheetIXFR64N60P Datasheet (P4-P5)
ECAD Model:
More Information:
IXFR64N60P more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
36 A
Rds On - Drain-Source Resistance:
105 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
360 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Height:
21.34 mm
Length:
16.13 mm
Series:
IXFR64N60
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
IXYS
Forward Transconductance - Min:
63 S
Fall Time:
24 ns
Product Type:
MOSFET
Rise Time:
23 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
79 ns
Typical Turn-On Delay Time:
28 ns
Unit Weight:
0.186952 oz
Tags
IXFR64, IXFR6, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 105 mO PolarHT HiPerFET Power Mosfet - ISOPLUS-247
***ical
Trans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
***nell
MOSFET, N, ISOPLUS247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:36A; Resistance, Rds On:0.105ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOPLUS-247; Termination Type:Through Hole; N-channel Gate Charge:200nC; Power, Pd:360W; Typ Capacitance Ciss:12000pF; Voltage, Isolation:2500V; Voltage, Vds Max:600V; Rth:0.35; Time, trr Max:200ns
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Part # Mfg. Description Stock Price
IXFR64N60P
DISTI # V36:1790_15878443
IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
20
  • 1000:$8.1290
  • 500:$8.8510
  • 250:$9.6860
  • 100:$10.5040
  • 50:$10.8300
  • 25:$11.7040
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # IXFR64N60P-ND
IXYS CorporationMOSFET N-CH 600V 36A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$12.7797
IXFR64N60P
DISTI # 30696577
IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
20
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # 747-IXFR64N60P
IXYS CorporationMOSFET DIODE Id36 BVdass600
RoHS: Compliant
145
  • 1:$15.8900
  • 10:$14.4400
  • 25:$13.3600
  • 50:$12.2900
  • 100:$11.9900
  • 250:$10.9900
  • 500:$9.9700
IXFR64N60P
DISTI # C1S331700009007
IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
20
  • 50:$10.8300
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DSEC29-06AC

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Rectifiers 2X15 Amps 600V 1.49 Rds
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A
MEJ1S1212SC

Mfr.#: MEJ1S1212SC

OMO.#: OMO-MEJ1S1212SC-MURATA-POWER-SOLUTIONS

Isolated DC/DC Converters 1W Single 12Vin 12Vout 83mA 5.2KV
IHB15-1.5

Mfr.#: IHB15-1.5

OMO.#: OMO-IHB15-1-5-1178

Linear Power Supplies +15V 1.5A PWR SPLY
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3-IXYS-CORPORATION

MOSFET N-CH 600V 42A ISOPLUS247
0326.250MXP

Mfr.#: 0326.250MXP

OMO.#: OMO-0326-250MXP-LITTELFUSE

Cartridge Fuses 250V .25A Slo-Blo 3AB
DSEC29-06AC

Mfr.#: DSEC29-06AC

OMO.#: OMO-DSEC29-06AC-IXYS-CORPORATION

Rectifiers 2X15 Amps 600V 1.49 Rds
RC2010FK-07470KL

Mfr.#: RC2010FK-07470KL

OMO.#: OMO-RC2010FK-07470KL-YAGEO

Thick Film Resistors - SMD 470K OHM 1%
STTH6002CPI

Mfr.#: STTH6002CPI

OMO.#: OMO-STTH6002CPI-STMICROELECTRONICS

DIODE ARRAY GP 200V 30A 3TOPI
Availability
Stock:
133
On Order:
2116
Enter Quantity:
Current price of IXFR64N60P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$15.89
$15.89
10
$14.44
$144.40
25
$13.36
$334.00
50
$12.29
$614.50
100
$11.99
$1 199.00
250
$10.99
$2 747.50
500
$9.97
$4 985.00
1000
$9.11
$9 110.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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