VN2460N3-G-P014

Mfr. #:: VN2460N3-G-P014
Manufacturer:: Microchip Technology
Description:: MOSFET N-CH Enhancmnt Mode MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: VN2460N3-G-P014 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: VN2460N3-G-P014 more Information VN2460N3-G-P014 Product Details

Product Attribute
Attribute Value

Manufacturer:: Microchip

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-92-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 160 mA

Rds On - Drain-Source Resistance:: 25 Ohms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Ammo Pack

Height:: 5.33 mm

Length:: 5.21 mm

Product:: MOSFET Small Signal

Transistor Type:: 1 N-Channel

Width:: 4.19 mm

Brand:: Microchip Technology

Fall Time:: 20 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 25 ns

Typical Turn-On Delay Time:: 10 ns

Unit Weight:: 0.016000 oz

Tags: VN2460N3-G, VN2460N3, VN2460N, VN246, VN24, VN2

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Vacuum Packaging with PL

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VN2460N3-G-P014 Description

***ark: MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES

***ical: Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Ammo

***(Formerly Allied Electronics): MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 Ohm3 TO-92 AMMO | Microchip Technology Inc. VN2460N3-G-P014

***rochip SCT: Enhancement-Mode N-Channel, 20Ω, 4V, TO-92-3, RoHS

*** Electronic Components: MOSFET N-CH Enhancmnt Mode MOSFET

***ure Electronics: P-Channel 60 V 14 Ohm Enhancement Mode Vertical DMOS FET - TO-92

***nsix Microsemi: Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***ment14 APAC: MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:160mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-160mA; Current Temperature:25°C; Device Marking:ZVP3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:1.6A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V

***ark: Mosfet, N-Ch, 240V, 0.16A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVN0124A

***et: Trans MOSFET N-CH 240V 0.16A 3-Pin E-Line

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET, 240 V, RoHS

*** Stop Electro: Small Signal Field-Effect Transistors

***hard Electronics: P-channel MOSFET Transistor, -140 mA -100 V, 3-Pin TO-92

***ure Electronics: ZVP3310 Series P-Channel 100 V 140 mA 625 mW Vertical DMOS FET - TO-92

***ark: Mosfet, P-Ch, 100V, 0.14A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVP3310A

***et Europe: Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***r Electronics: Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***p One Stop Global: Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo

***el Electronic: Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***icroelectronics: N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package

***et: Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo Pack

*** Electronic Components: MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET

***r Electronics: Small Signal Field-Effect Transistor

***el Electronic: CAP CER 2200PF 250V C0G RADIAL

Market price

Part #	Mfg.	Description	Stock	Price
VN2460N3-G-P014 DISTI # V72:2272_06516013	Microchip Technology Inc	Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 T/R RoHS: Compliant	1986	75000:$0.7346 30000:$0.7426 15000:$0.7508 6000:$0.7590 3000:$0.7655 1000:$0.7738 500:$0.7822 250:$0.7906 100:$0.7991 50:$0.8710 25:$0.8806 10:$1.0158 1:$1.0405
VN2460N3-G-P014 DISTI # VN2460N3-G-P014-ND	Microchip Technology Inc	MOSFET N-CH 600V 0.16A TO92-3 RoHS: Compliant Min Qty: 2000 Container: Tape & Box (TB)	Temporarily Out of Stock	2000:$0.9270
VN2460N3-G-P014 DISTI # 25749296	Microchip Technology Inc	Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 T/R RoHS: Compliant	1986	1000:$0.7738 500:$0.7822 250:$0.7906 100:$0.7991 50:$0.8710 25:$0.8806 12:$1.0158
VN2460N3-G-P014 DISTI # 70483928	Microchip Technology Inc	MOSFET,N-CHANNEL ENHANCEMENT-MODE,600V,20 Ohm3 TO-92AMMO RoHS: Compliant	0	2000:$1.3600
VN2460N3-G-P014 DISTI # 689-VN2460N3-G-P014	Microchip Technology Inc	MOSFET N-CH Enhancmnt Mode MOSFET RoHS: Compliant	3957	1:$1.2300 10:$1.2100 25:$1.0200 100:$0.9270
VN2460N3-G-P014 DISTI # VN2460N3-G-P014	Microchip Technology Inc	MOSFETN-CHANNEL ENHANCEMENT-MODE600V20 Ohm RoHS: Compliant	0	1000:$0.7500 100:$0.9000 26:$0.9900 1:$1.1900
VN2460N3-G-P014 DISTI # C1S505201327120	Microchip Technology Inc	Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 T/R RoHS: Compliant	1986	100:$0.7991 50:$0.8710 25:$0.8806 10:$1.0158

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	Mfr.#: 1761681-6 OMO.#: OMO-1761681-6-TE-CONNECTIVITY	Headers & Wire Housings IDC CONNECTOR
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VN2460N3-G-P014

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes