IPB073N15N5ATMA1

IPB073N15N5ATMA1
Mfr. #:
IPB073N15N5ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPB073N15N5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB073N15N5ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
114 A
Rds On - Drain-Source Resistance:
5.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
61 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
214 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
46 S
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
IPB073N15N5 SP001180660
Unit Weight:
0.077603 oz
Tags
IPB07, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications, PG-TO263-3, RoHS
***ark
Mosfet, N-Ch, 150V, 114A, 175Deg C, 214W; Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:114A; On Resistance Rds(On):0.0056Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:3.8V Rohs Compliant: Yes
***ineon
The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. | Summary of Features: Lower R DS(on) without compromising FOM gd and FOM oss; Lower output charge; Ultra-low reverse recovery charge; Increased commutation ruggedness; Higher switching frequency possible | Benefits: Reduced paralleling; Size reduction enabled with SuperSO8 best-in-class; Higher power density designs; More rugged products; System cost reduction; Improved EMI behavior | Target Applications: Low voltage drives; Telecom; Solar
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Part # Mfg. Description Stock Price
IPB073N15N5ATMA1
DISTI # V36:1790_16140317
Infineon Technologies AGTrans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R0
  • 1000000:$1.8680
  • 500000:$1.8700
  • 100000:$2.0360
  • 10000:$2.3120
  • 1000:$2.3570
IPB073N15N5ATMA1
DISTI # V72:2272_16140317
Infineon Technologies AGTrans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R0
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5ATMA1TR-ND
    Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    On Order
    • 2000:$2.2391
    • 1000:$2.3570
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5ATMA1CT-ND
    Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 500:$2.8786
    • 100:$3.3814
    • 10:$4.1270
    • 1:$4.6000
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5ATMA1DKR-ND
    Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 500:$2.8786
    • 100:$3.3814
    • 10:$4.1270
    • 1:$4.6000
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5ATMA1
    Infineon Technologies AGTrans MOSFET N 150V 114A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB073N15N5ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 6000:$1.9900
    • 10000:$1.9900
    • 4000:$2.0900
    • 2000:$2.1900
    • 1000:$2.2900
    IPB073N15N5ATMA1
    DISTI # SP001180660
    Infineon Technologies AGTrans MOSFET N 150V 114A 3-Pin TO-263 T/R (Alt: SP001180660)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 10000:€1.6900
    • 6000:€1.7900
    • 2000:€1.9900
    • 4000:€1.9900
    • 1000:€2.0900
    IPB073N15N5ATMA1
    DISTI # 43AC3264
    Infineon Technologies AGMOSFET, N-CH, 150V, 114A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:114A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,Power RoHS Compliant: Yes809
    • 500:$2.6900
    • 250:$2.9900
    • 100:$3.1500
    • 50:$3.3100
    • 25:$3.4700
    • 10:$3.6400
    • 1:$4.2800
    IPB073N15N5ATMA1
    DISTI # 726-IPB073N15N5ATMA1
    Infineon Technologies AGMOSFET
    RoHS: Compliant
    0
    • 1:$4.2400
    • 10:$3.6000
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6600
    • 1000:$2.2400
    • 2000:$2.1300
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,150V,81A,214W,PG-TO263-31013
    • 100:$2.6800
    • 25:$2.8700
    • 5:$3.2000
    • 1:$3.6200
    IPB073N15N5ATMA1
    DISTI # 2803388
    Infineon Technologies AGMOSFET, N-CH, 150V, 114A, TO-263-3300
    • 100:£2.8300
    • 10:£3.2600
    • 1:£4.2900
    IPB073N15N5ATMA1
    DISTI # 2803388
    Infineon Technologies AGMOSFET, N-CH, 150V, 114A, TO-263-3
    RoHS: Compliant
    299
    • 1000:$3.1500
    • 500:$3.2100
    • 250:$3.3800
    • 100:$3.5800
    • 10:$4.0500
    • 1:$4.3300
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    MOSFET N-CH 150V 120A TO263-3
    Availability
    Stock:
    Available
    On Order:
    1500
    Enter Quantity:
    Current price of IPB073N15N5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $4.24
    $4.24
    10
    $3.60
    $36.00
    100
    $3.12
    $312.00
    250
    $2.96
    $740.00
    500
    $2.66
    $1 330.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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