IRGPS60B120KDP

Mfr. #:: IRGPS60B120KDP
Manufacturer:: Infineon / IR
Description:: IGBT Transistors 1200V UltraFast 5-40kHz
Lifecycle:: New from this manufacturer.
Datasheet:: IRGPS60B120KDP Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRGPS60B120KDP Datasheet IRGPS60B120KDP Datasheet (P4-P6)IRGPS60B120KDP Datasheet (P7-P9)IRGPS60B120KDP Datasheet (P10-P12)
ECAD Model:
More Information:: IRGPS60B120KDP more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-274-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1.2 kV

Collector-Emitter Saturation Voltage:: 2.33 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 105 A

Pd - Power Dissipation:: 595 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 120 A

Height:: 20.3 mm

Length:: 15.6 mm

Width:: 5 mm

Brand:: Infineon / IR

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 25

Subcategory:: IGBTs

Part # Aliases:: SP001540752

Unit Weight:: 0.223990 oz

Tags: IRGPS60B120KDP, IRGPS60, IRGPS6, IRGPS, IRGP, IRG

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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Vacuum Packaging with PL

Step2:
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Step3:
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IRGPS60B120KDP More Information

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRGPS60B120KDP DISTI # IRGPS60B120KDP-ND	Infineon Technologies AG	IGBT 1200V 105A 595W SUPER247 RoHS: Compliant Min Qty: 1 Container: Tube	597In Stock	100:$17.7220 25:$19.8208 1:$22.5000
IRGPS60B120KDP DISTI # SP001540752	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 105A 3-Pin(3+Tab) TO-274AA (Alt: SP001540752) RoHS: Compliant Min Qty: 1	Europe - 175	1:€15.4900 10:€14.1900 25:€13.5900 50:€13.0900 100:€12.5900 500:€12.1900 1000:€11.2900
IRGPS60B120KDP DISTI # IRGPS60B120KDP	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 105A 3-Pin(3+Tab) TO-274AA - Rail/Tube (Alt: IRGPS60B120KDP) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$15.9900 10:$15.7900 25:$15.5900 50:$15.3900 100:$14.7900 500:$14.2900 1000:$14.0900
IRGPS60B120KDP DISTI # 45P3460	Infineon Technologies AG	IGBT Single Transistor, 105 A, 2.75 V, 595 W, 1.2 kV, TO-274AA, 3 RoHS Compliant: Yes	65	100:$16.8800 50:$17.8800 25:$18.8800 10:$19.7700 1:$21.4300
IRGPS60B120KDP. DISTI # 27AC6925	Infineon Technologies AG	DC Collector Current:105A,Collector Emitter Saturation Voltage Vce(on):2.75V,Power Dissipation Pd:595W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:IRGP Series,MSL:- RoHS Compliant: Yes	0	100:$16.8800 50:$17.8800 25:$18.8800 10:$19.7700 1:$21.4300
IRGPS60B120KDP DISTI # 70411655	Infineon Technologies AG	IRGPS60B120KDP,IGBT Transistor,105 A 1200 V,3-Pin TO-274AA RoHS: Compliant	0	1:$26.5400
IRGPS60B120KDP DISTI # 942-IRGPS60B120KDP	Infineon Technologies AG	IGBT Transistors 1200V UltraFast 5-40kHz RoHS: Compliant	227	1:$21.4200 5:$21.2000 10:$19.7600 25:$18.8700 100:$16.8700 250:$16.1000 500:$15.3200
IRGPS60B120KDP DISTI # 9128693	Infineon Technologies AG	IGBT N-CH 1200V 105A DIODE SUPER247, TU	225	50:£12.7990 25:£13.0600
IRGPS60B120KDP DISTI # 7840313	Infineon Technologies AG	IGBT N-CH 1200V 105A DIODE SUPER247, EA	16	10:£14.1500 1:£15.4100
IRGPS60B120KDP DISTI # 7840313P	Infineon Technologies AG	IGBT N-CH 1200V 105A DIODE SUPER247, TU	300	10:£14.1500
IRGPS60B120KDP DISTI # IRGPS60B120KDP	Infineon Technologies AG	Transistor: IGBT,1200V,120A,595W,SUPER247	25	1:$20.7200 3:$19.0200 10:$15.0600 25:$14.0900
IRGPS60B120KDP DISTI # 1688567	Infineon Technologies AG	IGBT, W/DIODE, 1200V, 105A, SUPER247 RoHS: Compliant	65	100:£11.6400 50:£12.1600 10:£12.4100 5:£13.5300 1:£15.4100
IRGPS60B120KDP DISTI # 1688567	Infineon Technologies AG	IGBT, W/DIODE, 1200V, 105A, SUPER247 RoHS: Compliant	65	100:$26.7200 25:$29.8800 10:$31.2800 5:$33.5600 1:$33.9200

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Availability

Stock:: 183
On Order:: 2166
Enter Quantity:

Current price of IRGPS60B120KDP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$21.42~~; ~~$21.42~~

5: ~~$21.20~~; ~~$106.00~~

10: ~~$19.76~~; ~~$197.60~~

25: ~~$18.87~~; ~~$471.75~~

100: ~~$16.87~~; ~~$1 687.00~~

250: ~~$16.10~~; ~~$4 025.00~~

500: ~~$15.32~~; ~~$7 660.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRGPS60B120KDP

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes