CSD18540Q5BT

CSD18540Q5BT
Mfr. #:
CSD18540Q5BT
Description:
MOSFET 60V,NCh NexFET Pwr MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
CSD18540Q5BT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CSD18540Q5BT more Information CSD18540Q5BT Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-CLIP-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
205 A
Rds On - Drain-Source Resistance:
2.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
41 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
188 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Height:
1 mm
Length:
6 mm
Series:
CSD18540Q5B
Transistor Type:
1 N-Channel
Width:
5 mm
Brand:
Texas Instruments
Forward Transconductance - Min:
116 S
Development Kit:
BOOSTXL-DRV8305EVM, DRV8704EVM
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
6 ns
Unit Weight:
0.000847 oz
Tags
CSD1854, CSD185, CSD18, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
60V, N ch NexFET MOSFET™, single SON5x6, 2.2mOhm 8-VSON-CLIP -55 to 175
***ical
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R
***p One Stop Global
Trans MOSFET N-CH 60V 100A 8-Pin VSON-CLIP EP T/R
***et Europe
Trans MOSFET N-CH 60V 100A 8-Pin VSON T/R
***i-Key
MOSFET N-CH 60V 100A 8VSON
***ark
Mosfet, N Ch, 60V, 100A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 60V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:195W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, N CH, 60V, 100A, VSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.9V; Dissipazione di Potenza Pd:195W; Modello Case Transistor:VSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***AS INTRUMENTS
This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of CSD18540Q5BT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.68
$2.68
10
$2.28
$22.80
100
$1.82
$182.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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