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IPI65R420CFD

IPI65R420CFD
Mfr. #:
IPI65R420CFD
Manufacturer:
Rochester Electronics, LLC
Description:
MOSFET N-Ch 650V 8.7A I2PAK-3 CoolMOS CFD2
Lifecycle:
New from this manufacturer.
Datasheet:
IPI65R420CFD Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
IPI65, IPI6, IPI
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-262 Tube
***Components
MOSFET N-CH 650V 8.7A COOLMOS CFD2 TO262
***i-Key
MOSFET N-CH 650V 8.7A TO262
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
Part # Mfg. Description Stock Price
IPI65R420CFDXKSA1
DISTI # IPI65R420CFDXKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO262
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IPI65R420CFD
    DISTI # 726-IPI65R420CFD    		Infineon Technologies AGMOSFET N-Ch 650V 8.7A I2PAK-3 CoolMOS CFD2
    RoHS: Compliant    		448
    • 1:$1.8400
    • 10:$1.5600
    • 100:$1.2500
    • 500:$1.1000
    IPI65R420CFDXKSA1
    DISTI # N/A    		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      IPI65R420CFDInfineon Technologies AGPower Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Compliant      		10945
      • 1000:$0.7500
      • 500:$0.7900
      • 100:$0.8200
      • 25:$0.8600
      • 1:$0.9200
      Image Part # Description
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      Mfr.#: IPI65R190CFDXKSA2

      OMO.#: OMO-IPI65R190CFDXKSA2-INFINEON-TECHNOLOGIES

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      Mfr.#: IPI65R099C6

      OMO.#: OMO-IPI65R099C6-1190

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      Mfr.#: IPI65R110CFDXKSA1

      OMO.#: OMO-IPI65R110CFDXKSA1-INFINEON-TECHNOLOGIES

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      IPI65R150CFD

      Mfr.#: IPI65R150CFD

      OMO.#: OMO-IPI65R150CFD-1190

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      IPI65R190C6XKSA1

      Mfr.#: IPI65R190C6XKSA1

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      IPI65R280C6

      Mfr.#: IPI65R280C6

      OMO.#: OMO-IPI65R280C6-1190

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      IPI65R280C6XKSA1

      Mfr.#: IPI65R280C6XKSA1

      OMO.#: OMO-IPI65R280C6XKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 650V 13.8A TO262
      IPI65R310CFD

      Mfr.#: IPI65R310CFD

      OMO.#: OMO-IPI65R310CFD-1190

      		 MOSFET N-Ch 650V 11.4A I2PAK-3 CoolMOS CFD2
      IPI65R600C6XKSA1

      Mfr.#: IPI65R600C6XKSA1

      OMO.#: OMO-IPI65R600C6XKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 650V 7.3A TO262
      IPI65R099C6XKSA1

      Mfr.#: IPI65R099C6XKSA1

      OMO.#: OMO-IPI65R099C6XKSA1-INFINEON-TECHNOLOGIES

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      Availability
      Stock:
      Available
      On Order:
      4500
      Enter Quantity:
      Current price of IPI65R420CFD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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