2SK3706

Mfr. #:: 2SK3706
Manufacturer:: Rochester Electronics, LLC
Description:: Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Lifecycle:: New from this manufacturer.
Datasheet:: 2SK3706 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
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Manufacturer

Product Category: IC Chips

Tags: 2SK3706, 2SK370, 2SK37, 2SK3, 2SK

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Vacuum Packaging with PL

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2SK3706 Description

***r Electronics: Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

*** Source Electronics: Trans MOSFET N-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold

***nell: MOSFET, N CH 100V 12A TO220F; Transistor Type:Switching; On State Resistance:130mohm; Power Dissipation:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220ML; Case Style:TO-220ML; Cont Current Id:12A; Termination Type:Through Hole; Transistor Polarity:N; Typ Voltage Vds:100V; Typ Voltage Vgs th:2.6V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): A 100V DIGITAL AUDIO SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET SB PACK

***ment14 APAC: MOSFET, N-CH, 100V, 14.4A, SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14.4A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ernational Rectifier: A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied

***ineon: Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Class-D Audio Amplifier Applications; Low Qg for better THD and improved efficiency; Low Qrr for better THD and improved efficiency; Low package stray inductance for reduced ringing and lower EMI | Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V

***klin Elektronik: INFINEON THT MOSFET PFET -100V -14A 200mΩ 175°C TO-220 IRF9530N-PBF

***el Electronic: In a Tube of 50, P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Infineon IRF9530NPBF

***ineon SCT: -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***id Electronics: Transistor MOSFET P-Ch. -14A/-100V TO220 IRF 9530N PBF

***ure Electronics: Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 79 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-14A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, P, -100V, -14A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:75W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-14A; Current Temperature:25°C; Device Marking:IRF9530N; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

***ure Electronics: Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3

***klin Elektronik: SILICONIX THT MOSFET NFET 100V 14A 160mΩ 175°C TO-220 IRF530PBF

*** electronic: Transistor MOSFET N-Ch. 16A/100V TO220

***et: Trans MOSFET N-CH 100V 14A 3-Pin (3+Tab) TO-220AB

***enic: 100V 14A 88W 160m´Î@10V8.4A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 100V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:88W; Power Dissipation Pd:88W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ark: Mosfet Transistor, P Channel, 14 A, -100 V, 200 Mohm, -10 V, -4 V

***ure Electronics: Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***trelec: Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: P Power dissipation: 79 W

***eco: IRF9530NSTRLPBF,MOSFET, P-CHAN NEL, -100V, -14A, 200 MOHM, 3

***p One Stop: Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK Tube

***ment14 APAC: MOSFET, P, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:14A; Source Voltage Vds:-100V; On Resistance Rds(on):0.2ohm;

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V

***emi: N-Channel Power MOSFET, QFET®, 100 V, 15.6 A, 63 mΩ, DPAK

***ure Electronics: N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N-CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK

***ure Electronics: N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3

***ment14 APAC: MOSFET, N CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15.6A; Source Voltage Vds:100V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.074ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Market price

Part #	Mfg.	Description	Stock	Price
2SK3706	ON Semiconductor	RoHS: Not Compliant	55000	1000:$5.6500 500:$5.9400 100:$6.1900 25:$6.4500 1:$6.9500
2SK3706	SANYO Semiconductor Co Ltd	Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	82500	1000:$5.6500 500:$5.9400 100:$6.1900 25:$6.4500 1:$6.9500
2SK3706-MG5	SANYO Semiconductor Co Ltd	RoHS: Not Compliant	11700	1000:$5.6500 500:$5.9400 100:$6.1900 25:$6.4500 1:$6.9500

Image	Part #	Description
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	Mfr.#: 2SK425-X13 OMO.#: OMO-2SK425-X13-1190	New and Original
	Mfr.#: 2SK681A-AZ OMO.#: OMO-2SK681A-AZ-1190	- Bulk (Alt: 2SK681A-AZ)
	Mfr.#: 2SK975TZ-E OMO.#: OMO-2SK975TZ-E-1190	New and Original
	Mfr.#: 2SK99 OMO.#: OMO-2SK99-1190	New and Original
	Mfr.#: 2SKIA1682D-Y-RTF OMO.#: OMO-2SKIA1682D-Y-RTF-1190	New and Original
	Mfr.#: 2SK2145-BL(TE85LFCT-ND OMO.#: OMO-2SK2145-BL-TE85LFCT-ND-1190	New and Original

2SK3706

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes