QPD0050TR7

QPD0050TR7
Mfr. #:
QPD0050TR7
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-3.6GHz GaN 75W 48V
Lifecycle:
New from this manufacturer.
Datasheet:
QPD0050TR7 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
QPD0050TR7 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Technology:
GaN
Gain:
19.4 dB
Output Power:
75 W
Minimum Operating Temperature:
- 40 C
Mounting Style:
SMD/SMT
Package / Case:
DFN-6
Packaging:
Reel
Application:
Microcell Base Station, W-CDMA / LTE
Configuration:
Single
Operating Frequency:
DC to 3.6 GHz
Series:
QPD
Brand:
Qorvo
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
250
Subcategory:
Transistors
Part # Aliases:
1132691
Tags
QPD005, QPD0, QPD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
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Availability
Stock:
Available
On Order:
3500
Enter Quantity:
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