IXTA26P20P

Mfr. #:: IXTA26P20P
Manufacturer:: Littelfuse
Description:: MOSFET -26.0 Amps -200V 0.170 Rds
Lifecycle:: New from this manufacturer.
Datasheet:: IXTA26P20P Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IXTA26P20P Datasheet IXTA26P20P Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: IXYS

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263AA-3

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 26 A

Rds On - Drain-Source Resistance:: 170 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 56 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 4.83 mm

Length:: 10.41 mm

Series:: IXTA26P20

Transistor Type:: 1 P-Channel

Width:: 9.65 mm

Brand:: IXYS

Forward Transconductance - Min:: 10 S

Fall Time:: 21 ns

Product Type:: MOSFET

Rise Time:: 33 ns

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 46 ns

Typical Turn-On Delay Time:: 18 ns

Unit Weight:: 0.056438 oz

Tags: IXTA26P2, IXTA26P, IXTA26, IXTA2, IXTA, IXT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IXTA26P20P Description

***ure Electronics: Single P-Channel 200 Vds 170 mOhm 300 W Power Mosfet - TO-263-3

***ark: Mosfet, P-Ch, 200V, 26A, To-263Aa Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: Single N-Channel 150 V 7.2 mOhm 70 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 150V 100A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS

***ment14 APAC: MOSFET, N CH, 100A, 150V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ark: MOSFET Transistor, N Channel, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V

***ure Electronics: Single N-Channel 250 V 20 mOhm 64 nC OptiMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 250V 64A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 250V, 64A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Source Voltage Vds:250V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***nell: MOSFET, N CH, 250V, 64A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.0175ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): SUM65N20-30-E3 N-channel MOSFET Transistor; 65 A; 200 V; 2+Tab-Pin TO-263

***ure Electronics: SUM65N20 Series 200 V 65 A 30 mOhm Surface Mount N-Channel Mosfet - D2PAK-3

*** Source Electronics: Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 200V 65A D2PAK

***nsix Microsemi: Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: N CHANNEL MOSFET, 200V, 65A, TO-263; Tra; N CHANNEL MOSFET, 200V, 65A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***nell: MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:65A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Max Repetitive Avalanche Energy:61mJ; Power Dissipation:375W; Power Dissipation on 1 Sq. PCB:3.75W; Power, Pd:375W; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Time, trr Typ:130ns; Typ Capacitance Ciss:5100pF; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

***ure Electronics: IRF630S Series N-Channel 200 V 400 mOhms Surface Mount Power Mosfet - TO-263

***ical: Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK

***ark: N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***nell: MOSFET, N, 200V, 9A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 74W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D2-PAK; Current Id Max: 9A; Junction to Case Thermal Resistance A: 1.7°C/W; On State resistance @ Vgs = 10V: 300mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 36A; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***p One Stop: Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 250V, 25A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:250V; On Resistance

***ineon: Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***nell: MOSFET, N CH, 250V, 25A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 136W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): SUM40N15-38-E3 N-channel MOSFET Transistor; 40 A; 150 V; 2+Tab-Pin TO-263

***ure Electronics: Single N-Channel 150 V 38 mO 38 nC Surface Mount Power Mosfet - TO-263 (D2PAK)

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
IXTA26P20P DISTI # 33633378	IXYS Corporation	Trans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK RoHS: Compliant	450	50:$3.4062
IXTA26P20P DISTI # 32711095	IXYS Corporation	Trans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK RoHS: Compliant	190	1000:$2.5641 500:$3.0403 100:$3.7546 50:$4.1210 5:$5.1282
IXTA26P20P DISTI # IXTA26P20P-ND	IXYS Corporation	MOSFET P-CH 200V 26A TO-263 RoHS: Compliant Min Qty: 1 Container: Tube	1590In Stock	2500:$2.5900 500:$3.0710 100:$3.7925 50:$4.1626 10:$4.6250 1:$5.1800
IXTA26P20P TRL DISTI # V36:1790_19817464	IXYS Corporation	IXTA26P20P TRL	0
IXTA26P20P DISTI # V36:1790_15877950	IXYS Corporation	Trans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK RoHS: Compliant	0	1000:$2.5850 500:$2.9710 100:$3.7730 50:$4.0970 1:$5.1350
IXTA26P20P	IXYS Corporation	Single P-Channel 200 Vds 170 mOhm 300 W Power Mosfet - TO-263-3 RoHS: Compliant	756Tube	50:$3.5800 100:$3.4000
IXTA26P20P DISTI # 747-IXTA26P20P	IXYS Corporation	MOSFET -26.0 Amps -200V 0.170 Rds RoHS: Compliant	1175	1:$5.1800 10:$4.6700 25:$4.6300 50:$4.1600 100:$3.7900 250:$3.7200 500:$3.0700 1000:$2.5900 2500:$2.5500
IXTA26P20P DISTI # IXTA26P20P	IXYS Corporation	Transistor: P-MOSFET,PolarP™,unipolar,-200V,-26A,300W,TO263	100	1:$3.8400 3:$3.4500 10:$3.0600 50:$2.7400
IXTA26P20P DISTI # XSFP00000020468	IXYS Corporation	RoHS: Compliant	408 in Stock0 on Order	408:$3.9800 28:$4.2100

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IXTA26P20P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes