FDP3652

Mfr. #:: FDP3652
Manufacturer:: ON Semiconductor
Description:: MOSFET N-CH 100V 61A TO-220AB
Lifecycle:: New from this manufacturer.
Datasheet:: FDP3652 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Product Attribute
Attribute Value

Manufacturer: FSC

Product Category: FETs - Single

Packaging: Tube

Part-Aliases: FDP3652_NL

Unit-Weight: 0.063493 oz

Mounting-Style: Through Hole

Package-Case: TO-220-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 150 W

Maximum-Operating-Temperature: + 175 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 45 ns

Rise-Time: 85 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 61 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistance: 14 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 26 ns

Typical-Turn-On-Delay-Time: 12 ns

Channel-Mode: Enhancement

Tags: FDP3652, FDP365, FDP36, FDP3, FDP

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FDP3652 Description

***p One Stop Japan: Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube

***p One Stop Global: Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB

***Semiconductor: N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

***inecomponents.com: TO-220AB, SINGLE, N-CH, 100V, 16MOHM PWR ULTRAFET TRENCH MOS

***Components: MOSFET N-CHANNEL 100V 9A TO220AB

*** Source Electronics: MOSFET N-CH 100V 61A TO-220AB

***eco: FDP3652.,3 LD PLASTIC W/EXPOSE D HEATSNK <AZ

***ser: MOSFETs 100V, 61a, 0.016 Ohm

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; No. Of Pins:3Pins Rohs Compliant: Yes

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:61A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:182mJ; Current, Idm Pulse:70A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation:150W; Power, Pd:150W; Power, Ptot:150W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:62ns; Transistors, No. of:1; Typ Capacitance Ciss:2880pF; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Market price

Part #	Mfg.	Description	Stock	Price
FDP3652 DISTI # V36:1790_06359472	ON Semiconductor	FET 100V 16.0 MOHM TO220	12113	5000:$0.7903 2500:$0.7990 1000:$0.8540 500:$1.0174 100:$1.1278 10:$1.4022 1:$1.6158
FDP3652 DISTI # V79:2366_18816080	ON Semiconductor	FET 100V 16.0 MOHM TO220	222	5000:$0.7903 2500:$0.7990 1000:$0.8540 500:$1.0174 100:$1.1278 10:$1.4022 1:$1.6158
FDP3652 DISTI # FDP3652-ND	ON Semiconductor	MOSFET N-CH 100V 61A TO-220AB RoHS: Compliant Min Qty: 1 Container: Bulk	30In Stock	1000:$1.2530 500:$1.5123 100:$1.9444 10:$2.4200 1:$2.6800
FDP3652 DISTI # 26163598	ON Semiconductor	FET 100V 16.0 MOHM TO220	12113	5000:$0.7903 2500:$0.7990 1000:$0.8540 500:$1.0174 100:$1.1278 10:$1.4022 8:$1.6158
FDP3652 DISTI # 26122911	ON Semiconductor	FET 100V 16.0 MOHM TO220	222	5000:$0.7903 2500:$0.7990 1000:$0.8540 500:$1.0174 100:$1.1278 15:$1.4022
FDP3652 DISTI # 30702593	ON Semiconductor	FET 100V 16.0 MOHM TO220	32	16:$0.6217
FDP3652 DISTI # FDP3652	ON Semiconductor	Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP3652) RoHS: Compliant Min Qty: 288 Container: Bulk	Americas - 0	288:$0.8099 290:$0.8049 578:$0.7939 1440:$0.7839 2880:$0.7649
FDP3652 DISTI # FDP3652	ON Semiconductor	Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652) RoHS: Compliant Min Qty: 800	Asia - 0	800:$1.3662 1600:$1.3136 2400:$1.2650 4000:$1.2198 8000:$1.1778 20000:$1.1385 40000:$1.1198
FDP3652 DISTI # FDP3652	ON Semiconductor	Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP3652) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	800:$1.0067 1600:$1.0001 3200:$0.9873 4800:$0.9748 8000:$0.9507
FDP3652 DISTI # FDP3652	ON Semiconductor	Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.9299 10:€0.8269 25:€0.7439 50:€0.6759 100:€0.6199 500:€0.5719
FDP3652. DISTI # 15AC2932	Fairchild Semiconductor Corporation	Transistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:150W,No. of Pins:3Pins RoHS Compliant: Yes	12	8000:$0.9500 4800:$0.9740 3200:$0.9870 1600:$1.0000 1:$1.0100
FDP3652 DISTI # 512-FDP3652	ON Semiconductor	MOSFET 100V 61a 0.016 Ohm RoHS: Compliant	7	1:$2.3100 10:$1.9600 100:$1.5700 500:$1.3700 1000:$1.1300
FDP3652_Q DISTI # 512-FDP3652_Q	ON Semiconductor	MOSFET 100V 61a 0.016 Ohm RoHS: Not compliant	0
FDP3652	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	2464	1000:$1.1300 500:$1.1900 100:$1.2400 25:$1.2900 1:$1.3900
FDP3652	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Europe - 624
FDP3652 DISTI # 1017692	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	0	500:$1.5800 100:$1.8100 10:$2.2600 1:$2.6500

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FDP3652

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes