SQJ422EP-T1_GE3

Mfr. #:: SQJ422EP-T1_GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET -40V 75A 83W AEC-Q101 Qualified
Lifecycle:: New from this manufacturer.
Datasheet:: SQJ422EP-T1_GE3 Datasheet
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More Information:: SQJ422EP-T1_GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8L-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 75 A

Rds On - Drain-Source Resistance:: 2.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 100 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 83 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Tradename:: TrenchFET

Packaging:: Reel

Series:: SQ

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 117 S

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 29 ns

Typical Turn-On Delay Time:: 13 ns

Unit Weight:: 0.017870 oz

Tags: SQJ42, SQJ4, SQJ

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We provide 90-360 days warranty.

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SQJ422EP-T1_GE3 Ratings and Reviews

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2019-03-29

SQJ422EP-T1_GE3 Description

***-Wing Technology: VISHAY SQJ422EP-T1-GE3MOSFET Transistor, N Channel, 75 A, 40 V, 0.0028 ohm, 10 V, 2 V

***ical: Trans MOSFET N-CH 40V 75A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

***ure Electronics: Single N-Channel 40 V 3.4 mOhm 83 W SMT Automotive Power Mosfet - PowerPAK SO-8L

***ark: Mosfet, N-Ch, 40V, 75A, Powerpak So Rohs Compliant: Yes

***enic: 40V 74A 83W 3.4m´Î@10V18A 2.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

***nsix Microsemi: Power Field-Effect Transistor, 75A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***et: N-CHANNEL 40-V (D-S) 175C MOSFET

***ure Electronics: Single N-Channel 40 V 2.4 mOhm 92 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5x6mm package, PG-TDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 40V, 85A, 2.4 mOhm, 92 nC Qg, PQFN56 | Infineon IRFH7440TRPBF

*** Source Electronics: Trans MOSFET N-CH Si 40V 159A 8-Pin QFN EP T/R / MOSFET N-CH 40V 85A 8PQFN

***roFlash: Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***Yang: Trans MOSFET N-CH 40V 85A 8-Pin PQFN T/R 4k - Tape and Reel

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 104 W

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ark: T&R / MOSFET, 40V, 85A, 3.3 mOhm, 65 nC Qg, PQFN56

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 40V 117A 8-Pin PQFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 117 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 37 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 78

***icroelectronics: N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET, N CH, 30V, 80A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; On Resistance Rds(on):0.0025ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 80A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***emi: Single N-Channel Power MOSFET 40V, 85A, 3.8mΩ Power MOSFET 40V, 85A, 3.8 mOhm, Single N-Channel, u8FL, Logic Level

***ical: Trans MOSFET N-CH 40V 20A 8-Pin WDFN EP T/R

***enic: 40V 20A 3.8m´Î@10V20A 3.2W 2V@250Ã×A N Channel WDFN-8 MOSFETs ROHS

***nell: MOSFET, N-CH, 40V, 85A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 55W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

*** Stop Electro: Power Field-Effect Transistor, 85A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***DA Technology Co., Ltd.: Product Description Demo for Development.

***Yang: T6 40V NCH LL IN U8FL - Tape and Reel

***ure Electronics: SQJ858AEP Series 40 V 58 A Automotive N-Channel Mosfet - PowerPAK® SO-8L

***-Wing Technology: VISHAY SQJ858AEP-T1-GE3MOSFET Transistor, N Channel, 58 A, 40 V, 0.005 ohm, 10 V, 2 V

***nell: MOSFET, N-CH, 40V, 58A, PPAKSO8L; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***ure Electronics: 40 V 60 A 55 W SMT Automotive N-Channel Mosfet - PowerPAK® SO-8L

*** Electronics: VISHAY SILICONIX SQJ886EP-T1-GE3 MOSFET, N-CH, 40V, 60A, PPAKSO8L

***ronik: N-CH 40V 60A 45mOhm PPSO-8L RoHSconf

*** Americas: N-CHANNEL 40-V (D-S) 175C MOSFET

***enic: PowerPAK SO-8-4 Pre-ordered Chips ROHS

***nell: MOSFET, N-CH, 40V, 60A, PPAKSO8L; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:55W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

SQJ422EP-T1_GE3 More Information

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

Part #	Mfg.	Description	Stock	Price
SQJ422EP-T1-GE3 DISTI # V72:2272_09219162	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF RoHS: Compliant	1043	1000:$0.6727 500:$0.8097 250:$0.8900 100:$0.9889 25:$1.1516 10:$1.2796 1:$1.7081
SQJ422EP-T1-GE3 DISTI # V36:1790_09219162	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF RoHS: Compliant	0	3000000:$0.6136 1500000:$0.6138 300000:$0.6280 30000:$0.6511 3000:$0.6549
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6082In Stock	1000:$0.7300 500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6082In Stock	1000:$0.7300 500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	15000:$0.6048 6000:$0.6284 3000:$0.6615
SQJ422EP-T1-GE3 DISTI # 18881595	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF RoHS: Compliant	3000	3000:$0.4726
SQJ422EP-T1-GE3 DISTI # 31578091	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF RoHS: Compliant	1045	12:$1.7081
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 75A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ422EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.5759 18000:$0.5919 12000:$0.6089 6000:$0.6349 3000:$0.6549
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 75A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ422EP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 75A 8-Pin PowerPAK SO T/R (Alt: SQJ422EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4729 18000:€0.4949 12000:€0.5599 6000:€0.6899 3000:€0.9619
SQJ422EP-T1_GE3 DISTI # 76Y1532	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSFET	0	10000:$0.5720 6000:$0.5850 4000:$0.6080 2000:$0.6750 1000:$0.7430 1:$0.7740
SQJ422EP-T1-GE3 DISTI # 99W9662	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSFET	0
SQJ422EP-T1_GE3 DISTI # 781-SQJ422EP-T1_GE3	Vishay Intertechnologies	MOSFET -40V 75A 83W AEC-Q101 Qualified RoHS: Compliant	13148	1:$1.5700 10:$1.2900 100:$0.9940 500:$0.8550 1000:$0.6740 3000:$0.6290 6000:$0.5980 9000:$0.5760
SQJ422EP-T1-GE3 DISTI # 781-SQJ422EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3 RoHS: Compliant	0
SQJ422EP-T1-GE3 DISTI # 2364119	Vishay Intertechnologies	MOSFET, N-CH, 40V, 75A, PPAKSO8L RoHS: Compliant	0	9000:$0.8210 3000:$0.8490 1000:$0.8800 500:$0.9470 250:$1.0900 100:$1.2600 10:$1.5900 1:$1.9700
SQJ422EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3 RoHS: Compliant	Americas - 6000	3000:$0.6550 6000:$0.6330 12000:$0.6180 18000:$0.6030

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SQJ422EP-T1_GE3

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes