FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1
Mfr. #:
FF23MR12W1M1B11BOMA1
Manufacturer:
Infineon Technologies
Description:
Discrete Semiconductor Modules
Lifecycle:
New from this manufacturer.
Datasheet:
FF23MR12W1M1B11BOMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FF23MR12W1M1B11BOMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
Discrete Semiconductor Modules
RoHS:
Y
Product:
Power MOSFET Modules
Type:
EasyDUAL Module
Vf - Forward Voltage:
4 V
Vgs - Gate-Source Voltage:
- 10 V, 20 V
Mounting Style:
Press Fit
Package / Case:
Module
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Configuration:
Dual
Brand:
Infineon Technologies
Transistor Polarity:
N-Channel
Fall Time:
12 ns
Id - Continuous Drain Current:
50 A
Operating Supply Voltage:
-
Pd - Power Dissipation:
20 mW
Product Type:
Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:
23 mOhms
Rise Time:
10 ns
Factory Pack Quantity:
24
Subcategory:
Discrete Semiconductor Modules
Tradename:
CoolSIC
Typical Turn-Off Delay Time:
43.5 ns
Typical Turn-On Delay Time:
12 ns
Vds - Drain-Source Breakdown Voltage:
1200 V
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Part # Aliases:
FF23MR12W1M1_B11 SP001602224
Tags
FF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1200 V 23 mOhm CoolSiC EasyDual PressFIT/NTC Mosfet Module
***ical
Trans MOSFET N-CH SiC 1.2KV 50A 22-Pin EASY1B-2 Tray
***i-Key
MOSFET 2 N-CH 1200V 50A MODULE
***ronik
IGBT 1200V 50A 4,50V
***ark
Mosfet Module, N-Ch, 1.2Kv, 50A; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET MODULE, N-CH, 1.2KV, 50A; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:20mW; Operating Temperature Max:150°C; Product Range:CoolSic Series; SVHC:No SVHC (27-Jun-2018)
***nell
MODULO MOSFET, CA-N, 1.2KV, 50A; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.023ohm; Tensione Vgs di Misura Rds(on):-; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:20mW; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolSic Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EasyDUAL 1B 1200 V / 23 m halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Part # Mfg. Description Stock Price
FF23MR12W1M1B11BOMA1
DISTI # V99:2348_18204378
Infineon Technologies AGLOW POWER EASY16
  • 1:$92.6000
FF23MR12W1M1B11BOMA1
DISTI # FF23MR12W1M1B11BOMA1-ND
Infineon Technologies AGMOSFET 2 N-CH 1200V 50A MODULE
RoHS: Compliant
Min Qty: 1
Container: Tray
16In Stock
  • 1:$92.7700
FF23MR12W1M1B11BOMA1
DISTI # 33632614
Infineon Technologies AGLOW POWER EASY50
  • 1:$79.6308
FF23MR12W1M1B11BOMA1
DISTI # 31241752
Infineon Technologies AGLOW POWER EASY16
  • 1:$92.6000
FF23MR12W1M1B11BOMA1
DISTI # FF23MR12W1M1B11BOMA1
Infineon Technologies AGIGBTs - Trays (Alt: FF23MR12W1M1B11BOMA1)
RoHS: Compliant
Min Qty: 24
Container: Tray
Americas - 0
  • 240:$72.0900
  • 144:$73.7900
  • 96:$75.6900
  • 48:$77.6900
  • 24:$78.6900
FF23MR12W1M1B11BOMA1
DISTI # SP001602224
Infineon Technologies AGIGBTs (Alt: SP001602224)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€71.5900
  • 500:€72.5900
  • 100:€73.4900
  • 50:€74.7900
  • 25:€78.6900
  • 10:€79.5900
  • 1:€81.9900
FF23MR12W1M1B11BOMA1
DISTI # 24AC8570
Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 50A,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes18
  • 25:$87.6400
  • 10:$90.6700
  • 5:$94.9400
  • 1:$96.7200
FF23MR12W1M1B11BOMA1
DISTI # 726-FF23MR12W1M1B11
Infineon Technologies AGDiscrete Semiconductor Modules
RoHS: Compliant
86
  • 1:$95.7600
  • 5:$94.0000
  • 10:$89.7700
  • 25:$86.7700
FF23MR12W1M1B11BOMA1
DISTI # 2771413
Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 50A18
  • 50:£64.8900
  • 10:£66.2100
  • 5:£71.7200
  • 1:£73.0700
FF23MR12W1M1B11BOMA1
DISTI # XSKDRABV0050327
Infineon Technologies AG 
RoHS: Compliant
65 in Stock0 on Order
  • 65:$107.0400
  • 24:$114.6900
FF23MR12W1M1B11BOMA1
DISTI # 2771413
Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 50A
RoHS: Compliant
18
  • 1:$141.5600
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Mfr.#: RGT1608P-104-B-T5

OMO.#: OMO-RGT1608P-104-B-T5-SUSUMU

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Mfr.#: B58035U9754M062

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Mfr.#: FF6MR12W2M1B11BOMA1

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MOSFET MODULE 1200V 200A
Availability
Stock:
74
On Order:
2057
Enter Quantity:
Current price of FF23MR12W1M1B11BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$95.76
$95.76
5
$94.00
$470.00
10
$89.77
$897.70
25
$86.77
$2 169.25
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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