NJVMJD210T4G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

DPAK-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

25 V

Collector- Base Voltage VCBO:

40 V

Emitter- Base Voltage VEBO:

8 V

Collector-Emitter Saturation Voltage:

1.8 V

Maximum DC Collector Current:

10 A

Gain Bandwidth Product fT:

65 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

MJD210

DC Current Gain hFE Max:

180 at 2 A, 1 V

Packaging:

Reel

Brand:

ON Semiconductor

DC Collector/Base Gain hfe Min:

45 at 2 A, 1 V

Pd - Power Dissipation:

12.5 W

Product Type:

BJTs - Bipolar Transistors

Qualification:

AEC-Q101

Factory Pack Quantity:

2500

Subcategory:

Transistors

Tags

NJVMJD2, NJVMJD, NJVM, NJV