CSD16409Q3

Mfr. #:: CSD16409Q3
Description:: MOSFET N-Ch NexFET Power MOSFETs
Lifecycle:: New from this manufacturer.
Datasheet:: CSD16409Q3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: CSD16409Q3 more Information CSD16409Q3 Product Details

Product Attribute
Attribute Value

Manufacturer:: Texas Instruments

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSON-Clip-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 25 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 9.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 16 V

Qg - Gate Charge:: 4 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.6 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: NexFET

Packaging:: Reel

Height:: 1 mm

Length:: 3.3 mm

Series:: CSD16409Q3

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: Texas Instruments

Forward Transconductance - Min:: 38 S

Fall Time:: 3.4 ns

Product Type:: MOSFET

Rise Time:: 10.6 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 6.3 ns

Typical Turn-On Delay Time:: 6.5 ns

Unit Weight:: 0.001474 oz

Tags: CSD16409Q, CSD16409, CSD1640, CSD164, CSD16, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD16409Q3 Ratings and Reviews

A***i

Irf9540-workers. The transition resistance at 5 (a) is about 0,2 (ohm). Tested with current only 5 amps-holds, commutes, does not heat.

2019-04-30

S***Z

Teşekkürler,A fine quality, bright screen. The size is full and very narrow, the special cut sat on the ground. Muadil although bilmesem farkedilemeyecek up good.

2019-02-08

V***v

I did not receive this parcel

2019-04-19

CSD16409Q3 Description

***as Instruments: 25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 12.4 mOhm 8-VSON-CLIP -55 to 150

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications.

***ment14 APAC: FET, N CH, SINGLE, 25V, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:60A; Package / Case:SON; Power Dissipation Pd:2.6W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V

***AS INSTRUMEN: The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

CSD16409Q3 More Information

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Part #	Description	Stock	Price
CSD16409Q3 DISTI # V72:2272_07248744	Trans MOSFET N-CH 25V 15A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	980	500:$0.5097 250:$0.5215 100:$0.5796 25:$0.6966 10:$0.8512 1:$1.0018
CSD16409Q3 DISTI # V39:1801_07248744	Trans MOSFET N-CH 25V 15A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	0
CSD16409Q3 DISTI # 296-24253-1-ND	MOSFET N-CH 25V 60A 8-SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6603In Stock	1000:$0.4311 500:$0.5460 100:$0.7041 10:$0.8910 1:$1.0100
CSD16409Q3 DISTI # 296-24253-6-ND	MOSFET N-CH 25V 60A 8-SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6603In Stock	1000:$0.4311 500:$0.5460 100:$0.7041 10:$0.8910 1:$1.0100
CSD16409Q3 DISTI # 296-24253-2-ND	MOSFET N-CH 25V 60A 8-SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.3906
CSD16409Q3 DISTI # 27060809	Trans MOSFET N-CH 25V 15A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	980	500:$0.5479 250:$0.5606 100:$0.6231 25:$0.7488 18:$0.9150
CSD16409Q3 DISTI # 31711387	Trans MOSFET N-CH 25V 15A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	300	300:$0.4710
CSD16409Q3 DISTI # CSD16409Q3	Trans MOSFET N-CH 25V 15A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD16409Q3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3499 15000:$0.3599 10000:$0.3719 5000:$0.3849 2500:$0.4039
CSD16409Q3	25V, N ch NexFET MOSFET™, single SON3x3, 12.4mOhm	7325	1000:$0.3200 750:$0.3500 500:$0.4400 250:$0.5400 100:$0.5900 25:$0.6900 10:$0.7500 1:$0.8300
CSD16409Q3 DISTI # 595-CSD16409Q3	MOSFET N-Ch NexFET Power MOSFETs RoHS: Compliant	2554	1:$0.9200 10:$0.7800 100:$0.6000 500:$0.5310 1000:$0.4190 2500:$0.3720 10000:$0.3580 22500:$0.3460
CSD16409Q3	Power Field-Effect Transistor, 15A I(D), 25V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	30	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
CSD16409Q3		20	6:$0.9375
CSD16409Q3		2077
CSD16409Q3		2800	1601:$0.4375 321:$0.5000 1:$1.2500
CSD16409Q3		16	5:$1.0000 1:$1.2500

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of CSD16409Q3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.92~~; ~~$0.92~~

10: ~~$0.78~~; ~~$7.80~~

100: ~~$0.60~~; ~~$60.00~~

500: ~~$0.53~~; ~~$265.50~~

1000: ~~$0.42~~; ~~$419.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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