SKM300GA12V

Mfr. #:: SKM300GA12V
Manufacturer:: SEMIKRON
Description:: IGBT Module, Transistor Polarity:-, DC Collector Current:443A, Collector Emitter Saturation Voltage Vce(on):1.2kV, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:940mV, No. of Pins:5
Lifecycle:: New from this manufacturer.
Datasheet:: SKM300GA12V Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: SKM300GA12, SKM300GA1, SKM300GA, SKM300G, SKM300, SKM30, SKM3, SKM

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SKM300GA12V Description

***(Formerly Allied Electronics): SEMITRANS 4; IGBT Module; 1200V; 300A

***ment14 APAC: IGBT Module; Transistor Type:IGBT Module; IGBT Module; Transistor Type:IGBT Module; DC Collector Current:443A; Collector Emitter Voltage Vces:1.2kV; Collector Emitter Voltage V(br)ceo:940mV; No. of Pins:5; Package / Case:SEMITRANS 3

***ark: Igbt Module; Continuous Collector Current:443A; Collector Emitter Saturation Voltage:1.2Kv; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:stud; Collector Emitter Voltage Max:940Mv; Transistor Mounting:panel Rohs Compliant: Yes

***ikron: Features: V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt Typical Applications: AC inverter drives UPS Electronic welders Switched reluctance motor

***ure Electronics: FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module

***ark: Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***trelec: Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray

***ineon: Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

***ical: Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray

***nell: IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

*** Stop Electro: Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP

*** Electronic Components: Bipolar Transistors - BJT NPN Power Module

***ow.cn: Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube

***nell: TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style

***ark: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
SKM300GA12V DISTI # 77R2571	SEMIKRON	IGBT Module,Transistor Polarity:-,DC Collector Current:443A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:940mV,No. of Pins:5Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	0	100:$147.0500 50:$154.5300 25:$162.7700 10:$165.8400 5:$168.9100 1:$171.9800
SKM300GA12V DISTI # 70436370	SEMIKRON	SEMITRANS 4,IGBT Module,1200V,300A RoHS: Compliant	0	1:$163.7900 12:$155.0200 36:$147.1700 96:$140.0500 144:$133.6200
SKM300GA12V DISTI # SKM300GA12V	SEMIKRON	Urmax:1.2kV,Ic:300A,SEMITRANS4,V: D59,screw,screw	3	3:$102.9200 1:$119.4900

Image	Part #	Description
	Mfr.#: SKM30B-12 OMO.#: OMO-SKM30B-12-MEAN-WELL	Isolated DC/DC Converters 18-36Vin 12Vout 0.25-2.5A Iso DC-DC
	Mfr.#: SKM300GA122D OMO.#: OMO-SKM300GA122D-1190	New and Original
	Mfr.#: SKM300GA123D OMO.#: OMO-SKM300GA123D-1190	Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
	Mfr.#: SKM300GA12E4 OMO.#: OMO-SKM300GA12E4-1190	IGBT MODULE, SINGLE, 1.2KV, 422A, Transistor Polarity:NPN, DC Collector Current:422A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
	Mfr.#: SKM300GAL063D OMO.#: OMO-SKM300GAL063D-1190	SEMITRANS, 600V, 300A
	Mfr.#: SKM300GAR063D OMO.#: OMO-SKM300GAR063D-1190	New and Original
	Mfr.#: SKM300GAR123D OMO.#: OMO-SKM300GAR123D-1190	New and Original
	Mfr.#: SKM300GAR173D OMO.#: OMO-SKM300GAR173D-1190	New and Original
	Mfr.#: SKM300GB126D OMO.#: OMO-SKM300GB126D-1190	POWER IGBT TRANSISTOR
	Mfr.#: SKM300GB128D OMO.#: OMO-SKM300GB128D-1190	IGBT, D-56, IGBT, 1200 V, 370 A, 1200 V, 20 V, 5.5 V (Typ.)

SKM300GA12V

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes