IRF7807ZTRPBF

IRF7807ZTRPBF
Mfr. #:
IRF7807ZTRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 30V 11A 13.8mOhm 7.2nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF7807ZTRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7807ZTRPBF DatasheetIRF7807ZTRPBF Datasheet (P4-P6)IRF7807ZTRPBF Datasheet (P7-P9)IRF7807ZTRPBF Datasheet (P10)
ECAD Model:
More Information:
IRF7807ZTRPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
11 A
Rds On - Drain-Source Resistance:
18.2 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
7.2 nC
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Width:
3.9 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
4000
Subcategory:
MOSFETs
Part # Aliases:
SP001570494
Unit Weight:
0.019048 oz
Tags
IRF7807ZT, IRF7807Z, IRF7807, IRF780, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 11 A, 30 V, 13.8 Mohm, 10 V, 1.8 V
***ure Electronics
Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Current Temperature: 25°C; External Depth: 5.2mm; External Length / Height: 1.75mm; External Width: 4.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 88A; Row Pitch: 6.3mm; SMD Marking: IRF7807ZPBF; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Part # Mfg. Description Stock Price
IRF7807ZTRPBF
DISTI # V72:2272_13890727
Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
RoHS: Compliant
702
  • 500:$0.3164
  • 250:$0.3197
  • 100:$0.3232
  • 25:$0.4505
  • 10:$0.4560
  • 1:$0.5235
IRF7807ZTRPBF
DISTI # IRF7807ZPBFCT-ND
Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
18413In Stock
  • 1000:$0.3490
  • 500:$0.4362
  • 100:$0.5889
  • 10:$0.7630
  • 1:$0.8700
IRF7807ZTRPBF
DISTI # IRF7807ZPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
18413In Stock
  • 1000:$0.3490
  • 500:$0.4362
  • 100:$0.5889
  • 10:$0.7630
  • 1:$0.8700
IRF7807ZTRPBF
DISTI # IRF7807ZPBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
16000In Stock
  • 4000:$0.3070
IRF7807ZTRPBF
DISTI # 30163203
Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 4000:$0.4085
IRF7807ZTRPBF
DISTI # 30523189
Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
RoHS: Compliant
702
  • 500:$0.3164
  • 250:$0.3197
  • 100:$0.3232
  • 33:$0.4505
IRF7807ZTRPBF
DISTI # IRF7807ZTRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7807ZTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.2209
  • 8000:$0.2129
  • 16000:$0.2059
  • 24000:$0.1989
  • 40000:$0.1949
IRF7807ZTRPBF
DISTI # IRF7807ZTRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R (Alt: IRF7807ZTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
  • 4000:$0.1940
  • 8000:$0.1886
  • 12000:$0.1835
  • 20000:$0.1787
  • 40000:$0.1764
  • 100000:$0.1741
  • 200000:$0.1719
IRF7807ZTRPBF
DISTI # 43AC3293
Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power DissipationRoHS Compliant: Yes1123
  • 1:$0.7560
  • 10:$0.6340
  • 25:$0.5640
  • 50:$0.4950
  • 100:$0.4250
  • 250:$0.4000
  • 500:$0.3750
  • 1000:$0.3500
IRF7807ZTRPBF
DISTI # 70017550
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 11 Milliohms,ID 11A,SO-8,PD 2.5W,VGS +/-20V
RoHS: Compliant
0
  • 4000:$1.0400
  • 8000:$1.0190
  • 20000:$0.9880
  • 40000:$0.9460
  • 100000:$0.8840
IRF7807ZTRPBF
DISTI # 942-IRF7807ZTRPBF
Infineon Technologies AGMOSFET MOSFT 30V 11A 13.8mOhm 7.2nC
RoHS: Compliant
7655
  • 1:$0.7200
  • 10:$0.5970
  • 100:$0.3850
  • 1000:$0.3080
IRF7807ZTRPBFInternational Rectifier 40
  • 23:$0.5750
  • 5:$0.9200
  • 1:$1.1500
IRF7807ZTRPBFInternational Rectifier 3200
  • 1601:$0.4375
  • 321:$0.5000
  • 1:$1.2500
IRF7807ZTRPBF
DISTI # 1702263
Infineon Technologies AGMOSFET N-CH 30V 11A HEXFET SOIC8, RL7950
  • 4000:£0.1950
  • 8000:£0.1810
  • 12000:£0.1780
IRF7807ZTRPBFInternational Rectifier 50
  • 6:$0.8625
  • 25:$0.5606
IRF7807ZTRPBFInternational Rectifier 
RoHS: Compliant
Europe - 1035
    IRF7807ZTRPBF
    DISTI # 2803416
    Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8
    RoHS: Compliant
    1123
    • 5:$0.9590
    • 25:$0.8350
    • 100:$0.6810
    • 250:$0.5750
    • 500:$0.4980
    • 1000:$0.4710
    • 5000:$0.4460
    IRF7807ZTRPBF
    DISTI # C1S322000486236
    Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
    RoHS: Compliant
    4000
    • 4000:$0.3160
    IRF7807ZTRPBF
    DISTI # C1S322000486245
    Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
    RoHS: Compliant
    702
    • 250:$0.3197
    • 100:$0.3232
    • 25:$0.4505
    • 10:$0.4560
    IRF7807ZTRPBF
    DISTI # 2803416
    Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8
    RoHS: Compliant
    2369
    • 5:£0.4450
    • 25:£0.3750
    • 100:£0.3040
    • 250:£0.3010
    • 500:£0.2970
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    Mfr.#: BC817-25W,115

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    OMO.#: OMO-CC0805KRX7R8BB104

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    OMO.#: OMO-MCS3264R015FER

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    Mfr.#: MCS3264R015FER

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    Mfr.#: TC33X-2-103E

    OMO.#: OMO-TC33X-2-103E-BOURNS

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    CC0805KRX7R8BB104

    Mfr.#: CC0805KRX7R8BB104

    OMO.#: OMO-CC0805KRX7R8BB104-YAGEO

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    Availability
    Stock:
    Available
    On Order:
    1988
    Enter Quantity:
    Current price of IRF7807ZTRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.71
    $0.71
    10
    $0.60
    $5.97
    100
    $0.38
    $38.50
    1000
    $0.31
    $308.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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