NGTB10N60R2DT4G

Mfr. #:: NGTB10N60R2DT4G
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors RC2 IGBT 10A 600V DPAK
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB10N60R2DT4G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: DPAK-3

Mounting Style:: SMD/SMT

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.7 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 20 A

Pd - Power Dissipation:: 72 W

Maximum Operating Temperature:: + 175 C

Packaging:: Reel

Continuous Collector Current Ic Max:: 10 A

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: +/- 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 2500

Subcategory:: IGBTs

Unit Weight:: 0.012346 oz

Tags: NGTB10, NGTB1, NGTB, NGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB10N60R2DT4G Description

***ical: Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 20A, TO-252-3

***nell: IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 16A 56000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB05N60R2DT4G IGBT Single Transistor, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 Pins

*** Stop Electro: Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 16A, TO-252-3

***nell: IGBT, SINGLE, 600V, 16A, TO-252-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R

***el Electronic: ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 9A, TO-252-3

***nell: IGBT, SINGLE, 600V, 9A, TO-252-3; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 49W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 10 A, 600 V short-circuit rugged IGBT

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors N Ch 600V 10A

***ark: Ptd High Voltage Rohs Compliant: Yes

***nell: IGBT, D-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temper

***ical: Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 600 V, 7 A very fast IGBT

***roFlash: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***icroelectronics SCT: Short-circuit rugged IGBT, DPAK, Tape and Reel

***ment14 APAC: IGBT, SINGLE, 600V, 15A, TO-252-3

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***ponent Stockers USA: 15 A 600 V N-CHANNEL IGBT TO-252AA

***nell: IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 7.5A 38000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 4.5 A, 600 V very fast IGBT with Ultrafast diode

***ment14 APAC: 3/4.5 A, 600 V VERY FAST IGBT; DC Collector Current:7.5A; Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:38W;

***nell: IGBT, W DIODE, 600V, 7.5A, 38W, DPAK; Transistor Type:IGBT; DC Collector Current:7.5A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:38W

***ical: Trans IGBT Chip N=-CH 390V 21A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: ISL9V3040D3ST Series 400 V 21 A Surface Mount N-Channel Ignition IGBT - TO-252AA

***ark: Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:390V; Continuous Collector Current, Ic:17A; Collector Emitter Saturation Voltage, Vce(sat):1.9V; Power Dissipation, Pd:150W ;RoHS Compliant: Yes

***rchild Semiconductor: The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D2-Pak (TO-263), and TO-262 and TO- 220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components.EcoSPARK® devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.Formerly Developmental Type 49362.

Market price

Part #	Mfg.	Description	Stock	Price
NGTB10N60R2DT4G DISTI # V72:2272_07310750	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2413	1000:$0.6238 500:$0.7504 250:$0.8025 100:$0.8917 25:$1.0448 10:$1.1609 1:$1.4920
NGTB10N60R2DT4G DISTI # V36:1790_07310750	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4GOSCT-ND	ON Semiconductor	IGBT 10A 600V DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	102In Stock	100:$1.0360 10:$1.3290 1:$1.4900
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4GOSDKR-ND	ON Semiconductor	IGBT 10A 600V DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4GOSTR-ND	ON Semiconductor	IGBT 10A 600V DPAK RoHS: Compliant Container: Tape & Reel (TR)	Temporarily Out of Stock
NGTB10N60R2DT4G DISTI # 25775043	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2413	12:$1.4920
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4G	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin DPAK T/R (Alt: NGTB10N60R2DT4G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4G	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin DPAK T/R - Bulk (Alt: NGTB10N60R2DT4G) Min Qty: 481 Container: Bulk	Americas - 0	4810:$0.6409 2405:$0.6579 1443:$0.6659 962:$0.6749 481:$0.6789
NGTB10N60R2DT4G DISTI # 58Y3605	ON Semiconductor	IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 RoHS Compliant: Yes	0	1000:$0.7330 500:$0.9010 250:$0.9530 100:$1.0100 50:$1.1000 25:$1.1900 10:$1.2800 1:$1.4800
NGTB10N60R2DT4G DISTI # 45Y1416	ON Semiconductor	IGBT, SINGLE, 600V, 20A, TO-252-3,DC Collector Current:20A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:72W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	0
NGTB10N60R2DT4G DISTI # 863-NGTB10N60R2DT4G	ON Semiconductor	IGBT Transistors RC2 IGBT 10A 600V DPAK RoHS: Compliant	3673	1:$1.3700 10:$1.1700 100:$0.8960 500:$0.7920 1000:$0.6250
NGTB10N60R2DT4G	ON Semiconductor	Insulated Gate Bipolar Transistor RoHS: Compliant	4647	1000:$0.6800 500:$0.7200 100:$0.7500 25:$0.7800 1:$0.8400
NGTB10N60R2DT4G DISTI # 8829809P	ON Semiconductor	IGBT N-CH 600V 10A DPAK3, RL	2180	100:£0.3910
NGTB10N60R2DT4G DISTI # 2492866	ON Semiconductor	IGBT, SINGLE, 600V, 20A, TO-252-3 RoHS: Compliant	165	2500:$0.9240 1000:$0.9420 500:$1.1900 100:$1.3500 10:$1.7600 1:$2.0600
NGTB10N60R2DT4G DISTI # 2492866	ON Semiconductor	IGBT, SINGLE, 600V, 20A, TO-252-3 RoHS: Compliant	165	500:£0.3610 250:£0.3620 100:£0.3630 25:£0.3640 5:£0.3790
NGTB10N60R2DT4G	ON Semiconductor	600V,10A,N-Channel IGBT	1750	1:$1.1400 100:$0.8600 500:$0.7300 1000:$0.6900

Image	Part #	Description
	Mfr.#: KSP44BU OMO.#: OMO-KSP44BU	Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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	Mfr.#: FGD2736G3-F085 OMO.#: OMO-FGD2736G3-F085	IGBT Transistors ECOSPARK 2 IGNITION IGBT
	Mfr.#: STGB30H60DFB OMO.#: OMO-STGB30H60DFB	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	Mfr.#: STTH2R02AFY OMO.#: OMO-STTH2R02AFY	Rectifiers Automotive Ultrafast recovery diode
	Mfr.#: FL5150MX OMO.#: OMO-FL5150MX	Switching Controllers IGBT/MOSFET AC Phase Cut Dimmer Cntroller
	Mfr.#: STFH10N60M2 OMO.#: OMO-STFH10N60M2	MOSFET N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
	Mfr.#: 22-55-2083 OMO.#: OMO-22-55-2083-410	Headers & Wire Housings SL .100" 2X04P CRMP HSG VERS C
	Mfr.#: STFH10N60M2 OMO.#: OMO-STFH10N60M2-STMICROELECTRONICS	MOSFET NCH 600V 7.5A TO220
	Mfr.#: STGB30H60DFB OMO.#: OMO-STGB30H60DFB-STMICROELECTRONICS	TRENCH GATE FIELD-STOP IGBT, HB

NGTB10N60R2DT4G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes