MRF7S19170HSR3

Mfr. #:: MRF7S19170HSR3
Manufacturer:: NXP Semiconductors
Description:: RF MOSFET Transistors HV7 1.9GHZ 50W
Lifecycle:: New from this manufacturer.
Datasheet:: MRF7S19170HSR3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: MRF7S19170HSR3 more Information MRF7S19170HSR3 Product Details

Product Attribute
Attribute Value

Manufacturer: FREESCALE

Product Category: RF FETs

Series: MRF7S19170H

Packaging: Reel

Unit-Weight: 0.238367 oz

Mounting-Style: SMD/SMT

Package-Case: NI-880S

Technology: Si

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 65 C

Vgs-Gate-Source-Voltage: - 6 V 10 V

Vds-Drain-Source-Breakdown-Voltage: 65 V

Transistor-Polarity: N-Channel

Tags: MRF7S19170HS, MRF7S1917, MRF7S191, MRF7S19, MRF7S1, MRF7S, MRF7, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF7S19170HSR3 Description

***escale Semiconductor: Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 50 W Avg., 28 V

***et: Transistor RF FET N-CH 65V 1930MHz to 1990MHz 2-Pin NI-880S T/R

***ical: Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R

***escale Semiconductor: Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 50 W Avg., 28 V

***W: RF Power Transistor,1805 to 1880 MHz, 207 W, Typ Gain in dB is 19 @ 1880 MHz, 28 V, LDMOS, SOT1799

***et: Trans MOSFET N-CH -0.5V/65V 6-Pin NI-780S T/R

***el Electronic: RF MOSFET Transistors AF 1.8GHZ 230W NI780S-6

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ark: Single W-Cdma Lateral N-Channel Rf Power Mosfet, 1510 Mhz, 23 W Avg., 28 V Rohs Compliant: Yes

***W: RF Power Transistor, 1.47 to 1.51 GHz, 100 W, 19.5 dB, 28 V, SOT1793-1, LDMOS

***ical: Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R

*** Electronic Components: RF MOSFET Transistors HV7 1.5GHZ 28V23W NI780S

***el Electronic: IC REG TERM DDR-I/II 1.7V 8SOIC

***escale Semiconductor: Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V

***W: RF Power Transistor,2110 to 2170 MHz, 100 W, Typ Gain in dB is 18.3 @ 2170 MHz, 28 V, LDMOS, SOT1793

***p One Stop Global: Trans RF MOSFET N-CH 65V 3-Pin Case 465A-06 T/R

*** Electronic Components: RF MOSFET Transistors HV8 2.1GHZ 100W

***i-Key Marketplace: RF S BAND, N-CHANNEL POWER MOSFE

***ure Electronics: N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA

***emi: N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

***ment14 APAC: MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance

***roFlash: Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3

***ical: Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R

***nsix Microsemi: Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***emi: N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

***ure Electronics: N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA

***r Electronics: Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:40W; Pulse Current Idm:20A; SMD Marking:RFD14N05; Termination Type:SMD; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***rchild Semiconductor: These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

Market price

Part #	Mfg.	Description	Stock	Price
MRF7S19170HSR3 DISTI # 25967928	NXP Semiconductors	Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R	105	1:$187.2000
MRF7S19170HSR3 DISTI # MRF7S19170HSR3-ND	NXP Semiconductors	FET RF 65V 1.99GHZ NI-880S RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Limited Supply - Call
MRF7S19170HSR3 DISTI # 841-MRF7S19170HSR3	NXP Semiconductors	RF MOSFET Transistors HV7 1.9GHZ 50W RoHS: Compliant	0
MRF7S19170HSR3	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	37	1000:$124.4000 500:$130.9400 100:$136.3200 25:$142.1700 1:$153.1000

Image	Part #	Description
	Mfr.#: MRF7S19080HSR5 OMO.#: OMO-MRF7S19080HSR5	RF MOSFET Transistors HV7 1.9GHZ 28V
	Mfr.#: MRF7S19170HR5 OMO.#: OMO-MRF7S19170HR5	RF MOSFET Transistors HV7 1.9GHZ 50W
	Mfr.#: MRF7S19170HSR5 OMO.#: OMO-MRF7S19170HSR5-NXP-SEMICONDUCTORS	FET RF 65V 1.99GHZ NI-880S
	Mfr.#: MRF7S19080HR OMO.#: OMO-MRF7S19080HR-1190	New and Original
	Mfr.#: MRF7S19170HR3 OMO.#: OMO-MRF7S19170HR3-NXP-SEMICONDUCTORS	FET RF 65V 1.99GHZ NI-880
	Mfr.#: MRF7S19170HS OMO.#: OMO-MRF7S19170HS-1190	New and Original
	Mfr.#: MRF7S19210HR3 OMO.#: OMO-MRF7S19210HR3-NXP-SEMICONDUCTORS	FET RF 65V 1.99GHZ NI780
	Mfr.#: MRF7S19210HSR5 OMO.#: OMO-MRF7S19210HSR5-NXP-SEMICONDUCTORS	FET RF 65V 1.99GHZ NI780S
	Mfr.#: MRF7S19120NR1 OMO.#: OMO-MRF7S19120NR1-NXP-SEMICONDUCTORS	FET RF 65V 1.99GHZ TO-270-4
	Mfr.#: MRF7S19100NR1 OMO.#: OMO-MRF7S19100NR1-NXP-SEMICONDUCTORS	FET RF 65V 1.99GHZ TO270-4

MRF7S19170HSR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes