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BSC340N08NS3GATMA1

BSC340N08NS3GATMA1
Mfr. #:
BSC340N08NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC340N08NS3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
23 A
Rds On - Drain-Source Resistance:
34 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
9.1 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
32 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
8 S
Fall Time:
2 ns
Product Type:
MOSFET
Rise Time:
3 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
11 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
BSC340N08NS3 BSC34N8NS3GXT G SP000447534
Unit Weight:
0.007055 oz
Tags
BSC340N08NS3, BSC340N, BSC34, BSC3, BSC
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain
*** Source Electronics
Trans MOSFET N-CH 80V 7A Automotive 8-Pin TDSON EP T/R / MOSFET N-CH 80V 23A TDSON-8
***ure Electronics
N-Channel 80 V 34 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
***nell
MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0275ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:32W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ure Electronics
Single N-Channel 80 V 29 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 80V 6.3A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:6.3A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Row Pitch:6.3mm; SMD Marking:F7488; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ser
MOSFETs 6a, 80V N-Ch MOSFET
***emi
N-Channel PowerTrench® MOSFET, 80V, 6.5A, 39mΩ
***Yang
Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
N CHANNEL MOSFET, 80V, 6.5A, SOIC, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:80V; On
***nell
MOSFET, N-CH, 80V, 6.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 60V; RDS(ON) 0.025Ohm; ID 25A; TO-252; PD 50W; VGS +/-20V; -55
***ure Electronics
Single N-Channel 60 V 0.031 Ohms Surface Mount Power Mosfet - TO-252
***nell
MOSFET, N-CH, 60V, 21.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 21.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 31.25W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***roFlash
Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ure Electronics
Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
Part # Mfg. Description Stock Price
BSC340N08NS3GATMA1
DISTI # V72:2272_06390955		Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
RoHS: Compliant		4900
  • 3000:$0.2249
  • 1000:$0.2526
  • 500:$0.3046
  • 250:$0.3079
  • 100:$0.3111
  • 25:$0.4366
  • 10:$0.4421
  • 1:$0.5109
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2692
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC340N08NS3GATMA1
DISTI # 31314390		Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
RoHS: Compliant		4900
  • 32:$0.5109
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP - Tape and Reel (Alt: BSC340N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2079
  • 10000:$0.2009
  • 20000:$0.1939
  • 30000:$0.1869
  • 50000:$0.1839
BSC340N08NS3GATMA1/SAMPLE
DISTI # BSC340N08NS3GATMA1/SAMPLE		Infineon Technologies AGTrans MOSFET N-CH 80V 23A 8-Pin TDSON T/R - Bulk (Alt: BSC340N08NS3GATMA1/SAMPLE)
RoHS: Compliant
Container: Bulk		Americas - 0
    BSC340N08NS3GATMA1
    DISTI # 47W3313    		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 23A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0275ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes2000
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 500:$0.3270
    • 1000:$0.2910
    BSC340N08NS3 G
    DISTI # 726-BSC340N08NS3G    		Infineon Technologies AGMOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
    RoHS: Compliant    		37972
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    BSC340N08NS3GATMA1
    DISTI # 726-BSC340N08NS3GATM    		Infineon Technologies AGMOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
    RoHS: Compliant    		7422
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    BSC340N08NS3GATMA1
    DISTI # 7545320    		Infineon Technologies AGMOSFET N-CHANNEL 80V 7A OPTIMOS3 TDSON8, PK1415
    • 5:£0.4800
    • 50:£0.3720
    • 250:£0.2420
    • 1250:£0.1920
    • 2500:£0.1880
    BSC340N08NS3GATMA1
    DISTI # 2212853    		Infineon Technologies AGMOSFET, N-CH, 80V, 23A, 8TDSON
    RoHS: Compliant    		2000
    • 1:$1.0800
    • 10:$0.8900
    • 100:$0.5750
    • 1000:$0.4610
    • 5000:$0.3880
    BSC340N08NS3GATMA1
    DISTI # 2212853    		Infineon Technologies AGMOSFET, N-CH, 80V, 23A, 8TDSON
    RoHS: Compliant    		2000
    • 5:£0.4900
    • 25:£0.3790
    • 100:£0.2830
    • 250:£0.2470
    • 500:£0.2200
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    Availability
    Stock:
    Available
    On Order:
    1990
    Enter Quantity:
    Current price of BSC340N08NS3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.67
    $0.67
    10
    $0.56
    $5.62
    100
    $0.36
    $36.30
    1000
    $0.29
    $291.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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