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IPB80N03S4L-02

IPB80N03S4L-02
Mfr. #:
IPB80N03S4L-02
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB80N03S4L-02 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB80N03S4L-02 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
2.4 mOhms
Vgs - Gate-Source Voltage:
16 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
136 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS-T2
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
13 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
62 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
IPB80N03S4L02ATMA1 IPB8N3S4L2XT SP000273282
Unit Weight:
0.139332 oz
Tags
IPB80N03S4L-0, IPB80N03S, IPB80N03, IPB80N0, IPB80N, IPB8, IPB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB80N03S4L02ATMA1
DISTI # IPB80N03S4L02ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.8879
IPB80N03S4L02ATMA1
DISTI # IPB80N03S4L02ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N03S4L02ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.8019
  • 2000:$0.7729
  • 4000:$0.7449
  • 6000:$0.7199
  • 10000:$0.7069
IPB80N03S4L02ATMA1
DISTI # SP000273282		Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000273282)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.1889
  • 2000:€0.9269
  • 4000:€0.8289
  • 6000:€0.7539
  • 10000:€0.7069
IPB80N03S4L02ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		16735
  • 1000:$0.5500
  • 500:$0.5800
  • 100:$0.6100
  • 25:$0.6300
  • 1:$0.6800
IPB80N03S4L-02
DISTI # 726-IPB80N03S4L-02		Infineon Technologies AGMOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
RoHS: Compliant		1105
  • 1:$1.5100
  • 10:$1.2800
  • 100:$1.0300
  • 500:$0.8940
  • 1000:$0.7410
IPB80N03S4L02ATMA1
DISTI # 8268954P		Infineon Technologies AGMOSFET N-CH 80A 30V OPTIMOS-T2 TO263, RL1175
  • 125:£0.7720
  • 500:£0.6700
  • 1250:£0.6370
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 New and Original
Availability
Stock:
994
On Order:
2977
Enter Quantity:
Current price of IPB80N03S4L-02 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.51
$1.51
10
$1.28
$12.80
100
$1.03
$103.00
500
$0.89
$447.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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