S29GL01GS11DHA023

S29GL01GS11DHA023
Mfr. #:
S29GL01GS11DHA023
Manufacturer:
Cypress Semiconductor
Description:
NOR Flash Ser NOR Flash Memory 20
Lifecycle:
New from this manufacturer.
Datasheet:
S29GL01GS11DHA023 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
S29GL01GS11DHA023 more Information S29GL01GS11DHA023 Product Details
Product Attribute
Attribute Value
Manufacturer:
Cypress Semiconductor
Product Category:
NOR Flash
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
LEA-64
Series:
S29GL01G/512/256/128S
Memory Size:
1 Gbit
Timing Type:
Asynchronous
Supply Voltage - Min:
2.7 V
Supply Voltage - Max:
3.6 V
Supply Current - Max:
100 uA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Qualification:
AEC-Q100
Packaging:
Reel
Memory Type:
NOR
Speed:
110 ns
Brand:
Cypress Semiconductor
Product Type:
NOR Flash
Factory Pack Quantity:
2200
Subcategory:
Memory & Data Storage
Tradename:
MirrorBit Eclipse
Tags
S29GL01GS11DHA, S29GL01GS11D, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Image Part # Description
S29GL01GT11FHIV40

Mfr.#: S29GL01GT11FHIV40

OMO.#: OMO-S29GL01GT11FHIV40

NOR Flash Nor
S29GL01GS11FHIV23

Mfr.#: S29GL01GS11FHIV23

OMO.#: OMO-S29GL01GS11FHIV23

NOR Flash Nor
S29GL01GS11FHSS50

Mfr.#: S29GL01GS11FHSS50

OMO.#: OMO-S29GL01GS11FHSS50

NOR Flash Nor
S29GL01GT10DHSS20

Mfr.#: S29GL01GT10DHSS20

OMO.#: OMO-S29GL01GT10DHSS20

NOR Flash NOR
S29GL01GP11FAIR12

Mfr.#: S29GL01GP11FAIR12

OMO.#: OMO-S29GL01GP11FAIR12-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-P
S29GL01GS11FHV023

Mfr.#: S29GL01GS11FHV023

OMO.#: OMO-S29GL01GS11FHV023-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64FBGA GL-S
S29GL01GS11DHSS60

Mfr.#: S29GL01GS11DHSS60

OMO.#: OMO-S29GL01GS11DHSS60-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GT11FHV020

Mfr.#: S29GL01GT11FHV020

OMO.#: OMO-S29GL01GT11FHV020-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL GL-T
S29GL01GT13TFNV23

Mfr.#: S29GL01GT13TFNV23

OMO.#: OMO-S29GL01GT13TFNV23-CYPRESS-SEMICONDUCTOR

Flash Memory 1 GBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO
S29GL01GS11FHSS53

Mfr.#: S29GL01GS11FHSS53

OMO.#: OMO-S29GL01GS11FHSS53-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of S29GL01GS11DHA023 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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