2SK3489-TD-E

Mfr. #:: 2SK3489-TD-E
Manufacturer:: ON Semiconductor
Description:: Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount - Bulk (Alt: 2SK3489-TD-E)
Lifecycle:: New from this manufacturer.
Datasheet:: 2SK3489-TD-E Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: 2SK348, 2SK34, 2SK3, 2SK

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK3489-TD-E Description

***et: Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount

***nell: MOSFET, N CH, 30V, 8A, SOT89; Transistor Polarity:N-Channel; Current Id Max:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:3.5W; Transistor Case Style:SOT-89; No. of Pins:3

***(Formerly Allied Electronics): MOSFET, Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -7A,SO-8,PD 1.5W,VGS+/-20V,-55C

***ure Electronics: Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8

***enic: 30V 11.4A 2.5W 24m´Î@10V9.1A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***el Electronic: MICROCHIP - 24AA025E48-I/SN - EEPROM, einzigartige EUI-48™-Node-Adresse, 2 Kbit, 2 Blöcke (128 x 8 Bit), Seriell I2C (2-Draht)

***ark: P Channel Mosfet,-30V,-8.1A, Soic-8; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

***ark: Mosfet Transistor, P Channel, -10 A, -30 V, 20 Mohm, 10 V, -1 V

***itex: Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55+150 deg.C; SMD; SO8

***ure Electronics: Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET, P, -30V, -10A, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power D

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ure Electronics: Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.2A; Source Voltage Vds:-30V; On Resistance

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***roFlash: Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***Yang: Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

***ure Electronics: P-Channel 30 V 20 mO Surface Mount PowerTrench Mosfet - SOIC-8

***-Wing Technology: ON SEMICONDUCTOR - FDS4435BZ - P CHANNEL MOSFET, -30V, 8.8A, SOIC

***rchild Semiconductor: This P–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Market price

Part #	Mfg.	Description	Stock	Price
2SK3489-TD-E DISTI # 2SK3489-TD-E	ON Semiconductor	Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount - Bulk (Alt: 2SK3489-TD-E) RoHS: Not Compliant Min Qty: 834 Container: Bulk	Americas - 0

Image	Part #	Description
	Mfr.#: 2SK3480(0)-Z-E1-AZ OMO.#: OMO-2SK3480-0--Z-E1-AZ-1190	New and Original
	Mfr.#: 2SK3482-Z-E1-AZ OMO.#: OMO-2SK3482-Z-E1-AZ-1190	New and Original
	Mfr.#: 2SK3483 OMO.#: OMO-2SK3483-1190	New and Original
	Mfr.#: 2SK3483-AZ/JM OMO.#: OMO-2SK3483-AZ-JM-1190	New and Original
	Mfr.#: 2SK3483-Z-E1-AZ OMO.#: OMO-2SK3483-Z-E1-AZ-1190	New and Original
	Mfr.#: 2SK3483-ZK-E1-AZ OMO.#: OMO-2SK3483-ZK-E1-AZ-1190	New and Original
	Mfr.#: 2SK3484 OMO.#: OMO-2SK3484-1190	New and Original
	Mfr.#: 2SK3484-Z-E1-AZ OMO.#: OMO-2SK3484-Z-E1-AZ-1190	Trans MOSFET N-CH 100V 16A (Alt: 2SK3484-Z-E1-AZ)
	Mfr.#: 2SK3484AZ OMO.#: OMO-2SK3484AZ-1190	New and Original
	Mfr.#: 2SK3488-TD-E OMO.#: OMO-2SK3488-TD-E-1190	Trans MOSFET N-CH Si 30V 2.5A 4-Pin(3+Tab) SOT-89

2SK3489-TD-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes