TGF3015-SM

TGF3015-SM
Mfr. #:
TGF3015-SM
Manufacturer:
Qorvo
Description:
RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
Lifecycle:
New from this manufacturer.
Datasheet:
TGF3015-SM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF3015-SM more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
17.1 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
32 V
Vgs - Gate-Source Breakdown Voltage:
- 2.7 V
Id - Continuous Drain Current:
557 mA
Output Power:
11 W
Pd - Power Dissipation:
15.3 W
Mounting Style:
SMD/SMT
Package / Case:
QFN-EP-16
Packaging:
Tray
Configuration:
Single
Operating Frequency:
0.03 GHz to 3 GHz
Brand:
Qorvo
Development Kit:
TGF3015-SM-EVB1
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Part # Aliases:
1120419
Tags
TGF30, TGF3, TGF
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0.03- 3 GHz, 10 W, 17.1 dB, 32 V, GaN, Plastic
TGF3015-SM GaN HEMT
Qorvo TGF3015-SM is a 10W (P3dB), 50ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3x3mm package that saves real estate of already space-constrained handheld radios.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF3015-SM
DISTI # 772-TGF3015-SM
QorvoRF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
RoHS: Compliant
156
  • 1:$58.0000
  • 25:$51.0000
  • 100:$45.0000
TGF3015-SM-EVB
DISTI # 772-TGF3015-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
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Availability
Stock:
156
On Order:
2139
Enter Quantity:
Current price of TGF3015-SM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$58.00
$58.00
25
$51.00
$1 275.00
100
$45.00
$4 500.00
250
$41.00
$10 250.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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