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APTGT300A120G

APTGT300A120G
Mfr. #:
APTGT300A120G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules CC6106
Lifecycle:
New from this manufacturer.
Datasheet:
APTGT300A120G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APTGT300A120G DatasheetAPTGT300A120G Datasheet (P4-P6)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
IGBT Modules
RoHS:
Y
Product:
IGBT Silicon Modules
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
1.7 V
Continuous Collector Current at 25 C:
420 A
Gate-Emitter Leakage Current:
600 nA
Pd - Power Dissipation:
1.38 kW
Package / Case:
SP6
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 100 C
Packaging:
Tube
Brand:
Microchip / Microsemi
Mounting Style:
Chassis Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
1
Subcategory:
IGBTs
Unit Weight:
3.880136 oz
Tags
APTGT300A1, APTGT300A, APTGT300, APTGT30, APTGT3, APTGT, APTG, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT300A120G
***et
Trans IGBT Module N-CH 1.2KV 420A 7-Pin Case SP6
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High Voltage Power Module, Phase leg, 1200V, RoHS
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IGBT MODULE 1200V 420A 1380W SP6
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Trans IGBT Module N-CH 1200V 420A 1550000mW 7-Pin 62MM-1 Tray
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 22 mJ Energy dissipation during turn-off time: 23 mJ
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***ment14 APAC
IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:440A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:1.45kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:7; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:M62a; Current Ic Continuous a Max:300A; Current Temperature:80°C; Fall Time tf:0.13µs; Package / Case:Econopack 3; Power Dissipation Max:1.45kW; Power Dissipation Pd:1.45kW; Power Dissipation Pd:1.45kW; Pulsed Current Icm:600A; Rise Time:0.09µs; Termination Type:Screw; Voltage Vces:1.2kV
***ineon
Our well-known 62 mm 1200V dual IGBT modules with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency Diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
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***trelec
IGBT module Connection: 2 x M6, 3 x M4 Fastening: 4 x M6 Configuration: Single Housing type: 62 mm Collector-emitter saturation voltage: 3.1 V
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGL240TL120G
***et
Trans IGBT Module N-CH 1.2KV 305A 12-Pin Case SP6
*** Stop Electro
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High Voltage Power Module, Three level inverter, 1200V, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
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IGBT MODULE 1200V 305A 1000W SP6
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***ical
Trans IGBT Module N-CH 1200V 55A 208000mW 32-Pin Case SP-3 Tube
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Pm-Igbt-Tfs-Sp3F Sp3F Tube Rohs Compliant: Yes |Microchip APTGT35X120T3G
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Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel
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High Voltage Power Module, Three Phase bridge, 1200V, RoHS
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IGBT MOD TRENCH 3PH BRIDGE SP3
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Trans IGBT Module N-CH 1200V 220A 690000mW 7-Pin Case SP-6 Tube
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT150DU120G
*** Stop Electro
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Dual common source, 1200V, RoHS
***i-Key
POWER MOD IGBT TRENCH DL SRC SP6
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Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of APTGT300A120G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
100
$196.11
$19 611.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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