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IRFS840BT

IRFS840BT
Mfr. #:
IRFS840BT
Manufacturer:
FSC
Description:
Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lifecycle:
New from this manufacturer.
Datasheet:
IRFS840BT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
FSC
Product Category
IC Chips
Tags
IRFS840B, IRFS84, IRFS8, IRFS, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
***et
N-CH/400V/10A/0.55OHM/SUBSTITUTE OF IRFS740 & IRFS740A
***S
French Electronic Distributor since 1988
***ser
MOSFETs 400V N-Channel B-FET
***el Nordic
Contact for details
***hard Electronics
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
***S
French Electronic Distributor since 1988
***i-Key
MOSFET P-CH 60V 9.7A TO-220
***ser
MOSFETs PCh/60V/9.7a/0.28Ohm
***el Electronic
Oscillators 25MHz ±25ppm 4-SMD, No Lead Tape & Reel (TR) SiT8924B XO (Standard) MEMS 0.079Lx0.063W 2.00mmx1.60mm Surface Mount OSC MEMS 25.0000MHZ LVCMOS SMD
***el Nordic
Contact for details
***ark
RAIL \ N-CH/250V/5.8A/0.45OHM/Substitute of IRFS634 & IRFS634A
***i-Key
MOSFET N-CH 250V 8.1A TO-220F
***-Wing Technology
N-CHANNEL POWER MOSFET
***ser
MOSFETs 250V N-Channel B-FET
***et
N-CH/500V/4.6A/0.85OHM/SUBSTITUTE OF IRFS840 & IRFS840A
***ser
MOSFETs 500V N-Channel B-FET
***ure Electronics
Single N-Channel 200 V 0.36 Ohm 26 nC 50 W DMOS SMT Mosfet - TO-252-3
***emi
N-Channel Power MOSFET, QFET®, 200 V, 10 A, 360 mΩ, DPAK
***ment14 APAC
MOSFET, N-CH, 200V, 7.8A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.8A; Source Voltage Vds:200V; On Resistance
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Part # Mfg. Description Stock Price
IRFS840BTFairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		1200
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3300
  • 1:$0.3600
IRFS840BT
DISTI # 512-IRFS840BT		ON SemiconductorMOSFET
RoHS: Compliant		0
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    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of IRFS840BT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.44
    $0.44
    10
    $0.41
    $4.13
    100
    $0.39
    $39.15
    500
    $0.37
    $184.90
    1000
    $0.35
    $348.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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