SKM200GB12T4

SKM200GB12T4
Mfr. #:
SKM200GB12T4
Manufacturer:
SEMIKRON
Description:
IGBT Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes
Lifecycle:
New from this manufacturer.
Datasheet:
SKM200GB12T4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
SKM200GB12, SKM200GB1, SKM200GB, SKM200G, SKM200, SKM20, SKM2, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 313A 7-Pin Case D-56
***nell
IGBT MODULE, DUAL N CH, 1.2KV, 313A; Transistor Polarity: Dual N Channel; DC Collector Current: 313A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra
***ark
Igbt, Module, 1.2Kv, 313A, Semitrans 3; Dc Collector Current:313A; Collector Emitter Saturation Voltage Vce(On):1.8V; Power Dissipation Pd:-; Junction Temperature, Tj Max:175°C; Igbt Termination:stud; Product Range:- Rohs Compliant: Yes
***ikron
Features: V CE(sat ) with positive temperaturecoefficient High short circuit capability, selflimiting to 6 x I cnom Fast & soft inverse CAL diodes Large clearance (10 mm) andcreepage distances (20 mm) Isolated copper baseplate using DBCTechnology (Direct Copper Bonding4) UL recognized, file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders at f sw up to 20 kHz
***ical
Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray
***nell
IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V
***ineon
Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 650A 2250000mW Automotive 4-Pin 62MM-2 Tray
***ark
Transistor, Igbt Module, 1.2Kv, 650A; Transistor Polarity:n Channel; Dc Collector Current:650A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:2.25Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Caserohs Compliant: Yes
***ineon
Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***p One Stop
Trans IGBT Module N-CH 1200V 28A 130000mW 23-Pin EASY1B-1 Tray
***ment14 APAC
IGBT, LOW POW, 1200V, 15A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:15A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:130W
***ineon
EasyPIM 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon
Part # Mfg. Description Stock Price
SKM200GB12T4
DISTI # 55X3192
SEMIKRONIGBT Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes6
  • 5:$133.6400
  • 1:$135.7900
SKM200GB12T4
DISTI # 70098316
SEMIKRONIGBT halfbridge - trench
RoHS: Compliant
0
  • 1:$131.7100
  • 12:$124.6700
  • 48:$118.3400
  • 96:$112.6300
  • 144:$107.4500
SKM200GB12T4
DISTI # SKM200GB12T4
SEMIKRONIGBT half-bridge,Urmax:1.2kV,Ic:241A,SEMITRANS3,V: D56,screw1
  • 12:$102.3500
  • 3:$116.1100
  • 1:$129.6300
SKM200GB12T4
DISTI # SKM200GB12T4
SEMIKRONPOWER IGBT TRANSISTOR
RoHS: Compliant
0
    SKM200GB12T4SIC2
    DISTI # SKM200GB12T4SIC
    SEMIKRONPOWER IGBT TRANSISTOR
    RoHS: Compliant
    0
      SKM200GB12T4
      DISTI # 2423694
      SEMIKRONIGBT MODULE, DUAL N CH, 1.2KV, 313A
      RoHS: Compliant
      4
      • 10:£130.0000
      • 5:£133.0000
      • 1:£137.0000
      SKM200GB12T4
      DISTI # 2423694
      SEMIKRONIGBT MODULE, DUAL N CH, 1.2KV, 313A
      RoHS: Compliant
      5
      • 100:$274.7200
      • 25:$284.1800
      • 10:$294.3400
      • 1:$305.2400
      Image Part # Description
      SKM200GAH123DKLSP

      Mfr.#: SKM200GAH123DKLSP

      OMO.#: OMO-SKM200GAH123DKLSP-1190

      New and Original
      SKM200GAL12T4

      Mfr.#: SKM200GAL12T4

      OMO.#: OMO-SKM200GAL12T4-1190

      SEMITRANS, 1200V, 200A
      SKM200GAL173D

      Mfr.#: SKM200GAL173D

      OMO.#: OMO-SKM200GAL173D-1190

      POWER IGBT TRANSISTOR
      SKM200GAL174D

      Mfr.#: SKM200GAL174D

      OMO.#: OMO-SKM200GAL174D-1190

      New and Original
      SKM200GAR125D

      Mfr.#: SKM200GAR125D

      OMO.#: OMO-SKM200GAR125D-1190

      SEMITRANS, 1200V, 200A
      SKM200GB123D

      Mfr.#: SKM200GB123D

      OMO.#: OMO-SKM200GB123D-1190

      New and Original
      SKM200GB124DE

      Mfr.#: SKM200GB124DE

      OMO.#: OMO-SKM200GB124DE-1190

      New and Original
      SKM200GB128D

      Mfr.#: SKM200GB128D

      OMO.#: OMO-SKM200GB128D-1190

      POWER IGBT TRANSISTOR
      SKM200GB12T4SIC2

      Mfr.#: SKM200GB12T4SIC2

      OMO.#: OMO-SKM200GB12T4SIC2-1190

      POWER IGBT TRANSISTOR
      SKM200GBD1261S

      Mfr.#: SKM200GBD1261S

      OMO.#: OMO-SKM200GBD1261S-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of SKM200GB12T4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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