IRF7404TRPBF

Mfr. #:: IRF7404TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT PCh -20V -6.7A 40mOhm 33.3nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7404TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF7404TRPBF Datasheet IRF7404TRPBF Datasheet (P4-P6)IRF7404TRPBF Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 6.7 A

Rds On - Drain-Source Resistance:: 40 mOhms

Vgs th - Gate-Source Threshold Voltage:: 700 mV

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 50 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 1 P-Channel

Width:: 3.9 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 6.8 S

Fall Time:: 65 ns

Product Type:: MOSFET

Rise Time:: 32 ns

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 100 ns

Typical Turn-On Delay Time:: 14 ns

Part # Aliases:: SP001563596

Unit Weight:: 0.017870 oz

Tags: IRF7404TRPB, IRF7404TRP, IRF7404T, IRF7404, IRF740, IRF74, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IRF7404TRPBF Ratings and Reviews

G***n

Thank you, serious seller!

2019-06-20

E**y

Good product

2019-05-03

IRF7404TRPBF Description

***ure Electronics: Single P-Channel 20 V 0.04 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -20V, -6.7A, 40 mOhm, 33.3 nC Qg, SO-8

***Yang: Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R - Tape and Reel

***ineon SCT: -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***roFlash: Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***nell: MOSFET, P, LOGIC, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.7A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***ure Electronics: Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET

***ark: Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes

***et: Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin TDSON T/R

***et Europe: Trans MOSFET 2N-CH 20V 5.4A 8DSO

***i-Key Marketplace: SMALL SIGNAL N-CHANNEL MOSFET

***(Formerly Allied Electronics): IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC

***nell: N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg

***roFlash: Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***icroelectronics: N-channel 20 V, 0.030 Ohm, 6 A, 2.7 V drive STripFET(TM) II Power MOSFET in SO-8 package

***ure Electronics: N Channel 20 V 40 mOhm SMT StripFET II Power MOSFET - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 20V 6A 8-Pin SO N T/R / MOSFET N-CH 20V 6A 8SOIC

***ark: MOSFET, N, SO-8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.7V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:2.5W RoHS Compliant: Yes

***nell: MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Fall Time tf: 10ns; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 40mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 24A; Rise Time: 33ns; Voltage Vds Typ: 20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: 2.7V

***itex: Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8

***ure Electronics: Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R

***enic: 20V 8A 2W 18m´Î@4.5V8.3A 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: DUAL N CHANNEL MOSFET, 20V, SOIC; Transi; DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.015ohm; Rds(on) Test Voltage Vgs:12V

***ark: Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No

***ure Electronics: Dual N & P-Channel 20 V 30 mOhm PowerTrench® Mosfet - SOIC-8

***et Europe: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R

***Yang: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Al

***roFlash: Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N & P CH 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ure Electronics: Single N-Channel 20 V 35 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 20V 6.8A 8-Pin SOIC T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:6.8A; On Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes

***et Japan: Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): Dual N-Channel Enhancement MOSFET SOIC8

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

***(Formerly Allied Electronics): SI9926CDY-T1-E3 Dual N-channel MOSFET Module; 8 A; 20 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 20 V 0.018 Ohms Surface Mount Power Mosfet - SOIC-8

***et: Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R

***ark: Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No

***ment14 APAC: MOSFET, DUAL, NN, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Junction Temperature Tj Max:150°C; Package / Case:SO-8; Power Dissipation Pd:3.1W; Power Dissipation Pd:3.1W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:0.6V

***ure Electronics: N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R

***nell: MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:18A; On State Resistance:0.0086ohm; Voltage Vgs Rds on Measurement:10V; Case Style:SO-8; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Max Current Id:12.7A; Max Junction Temperature Tj:150°C; Max Voltage Vds:25V; Max Voltage Vgs:12V; Max Voltage Vgs th:1.4V; Min Voltage Vgs th:0.6V; Power Dissipation:2.5W; Power Dissipation Pd:5W; Rds Measurement Voltage:10V; Rise Time:11ns; Transistor Case Style:SO

Market price

Part #	Mfg.	Description	Stock	Price
IRF7404TRPBF DISTI # V72:2272_13889770	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R RoHS: Compliant	2803	3000:$0.3226 1000:$0.3408 500:$0.4062 250:$0.4073 100:$0.4084 25:$0.5642 10:$0.5669 1:$0.6468
IRF7404TRPBF DISTI # V72:2272_17802148	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R RoHS: Compliant	982	500:$0.3773 250:$0.4073 100:$0.4084 25:$0.5642 10:$0.5669 1:$0.6468
IRF7404TRPBF DISTI # IRF7404PBFCT-ND	Infineon Technologies AG	MOSFET P-CH 20V 6.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1In Stock	1000:$0.4770 500:$0.5847 100:$0.7731 10:$0.9880 1:$1.1300
IRF7404TRPBF DISTI # IRF7404PBFDKR-ND	Infineon Technologies AG	MOSFET P-CH 20V 6.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1In Stock	1000:$0.4770 500:$0.5847 100:$0.7731 10:$0.9880 1:$1.1300
IRF7404TRPBF DISTI # IRF7404PBFTR-ND	Infineon Technologies AG	MOSFET P-CH 20V 6.7A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.4239
IRF7404TRPBF DISTI # 30155467	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R RoHS: Compliant	8000	4000:$0.2544
IRF7404TRPBF DISTI # 31003632	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R RoHS: Compliant	2803	1000:$0.3408 500:$0.4062 250:$0.4073 100:$0.4084 27:$0.5642
IRF7404TRPBF DISTI # 26196791	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R RoHS: Compliant	982	500:$0.3773 250:$0.4073 100:$0.4084 27:$0.5642
IRF7404TRPBF DISTI # IRF7404TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7404TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.3109 8000:$0.2999 16000:$0.2989 24000:$0.2879 40000:$0.2879
IRF7404TRPBF DISTI # IRF7404TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R (Alt: IRF7404TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRF7404TRPBF DISTI # SP001563596	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R (Alt: SP001563596) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.3349 8000:€0.2739 16000:€0.2509 24000:€0.2319 40000:€0.2149
IRF7404TRPBF DISTI # 19K8276	Infineon Technologies AG	P CHANNEL MOSFET, -20V, 6.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-700mV RoHS Compliant: Yes	794	1:$0.9790 25:$0.8110 50:$0.6670 100:$0.5230 250:$0.4870 500:$0.4530 1000:$0.4180
IRF7404TRPBF DISTI # 70017702	Infineon Technologies AG	MOSFET,Power,P-Ch,VDSS -20V,RDS(ON) 0.04Ohm,ID -6.7A,SO-8,PD 2.5W,VGS +/-12V RoHS: Compliant	1288	1:$0.7700 10:$0.6800 100:$0.5900 500:$0.5100 1000:$0.4500
IRF7404TRPBF DISTI # 942-IRF7404TRPBF	Infineon Technologies AG	MOSFET MOSFT PCh -20V -6.7A 40mOhm 33.3nC RoHS: Compliant	910	1:$0.8900 10:$0.7370 100:$0.4750 1000:$0.3800 4000:$0.3210 8000:$0.3090 24000:$0.2970
IRF7404TRPBF	International Rectifier	Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	5375	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900
IRF7404TRPBF	International Rectifier	MOSFET Transistor, P-Channel, SO	29	7:$0.6300 1:$0.8400
IRF7404TRPBF	International Rectifier	MOSFET Transistor, P-Channel, SO	192	81:$0.4500 18:$0.7500 1:$1.5000
IRF7404TRPBF	International Rectifier	MOSFET Transistor, P-Channel, SO	1076	926:$0.7567 186:$0.8648 1:$2.1620
IRF7404TRPBF DISTI # 8268917P	Infineon Technologies AG	HEXFET P-CH MOSFET 6.7A 20V SOIC8, RL	3600	100:£0.3440 500:£0.3100 2000:£0.2720 4000:£0.2330
IRF7404TRPBF DISTI # TMOSP11913	Infineon Technologies AG	P-CH -20V -6,7A 40mOhm SO-8 RoHS: Compliant	Stock DE - 0Stock US - 0	4000:$0.3859 8000:$0.3639 12000:$0.3418 16000:$0.3087 24000:$0.2977
IRF7404TRPBF	International Rectifier	RoHS: Compliant	Europe - 2395
IRF7404TRPBF DISTI # IRF7404PBF-GURT	Infineon Technologies AG	P-Ch 20V 6,7A 2,5W 0,04R SO8 RoHS: Compliant	0	50:€0.2630 100:€0.2230 500:€0.2030 2000:€0.1955
IRF7404TRPBF DISTI # 2468018	Infineon Technologies AG	MOSFET, P CH, -20V, -6.7A, SOIC-8 RoHS: Compliant	1974	5:£0.5820 25:£0.5740 100:£0.3510 250:£0.3340 500:£0.3160
IRF7404TRPBF DISTI # XSFP00000050458	Infineon Technologies AG	RoHS: Compliant	5384	4000:$0.5300 5384:$0.4818
IRF7404TRPBF DISTI # XSLY00000006695	INFINEON/IR	SO-8 RoHS: Compliant	5760	4000:$0.3000 5760:$0.2800
IRF7404TRPBF DISTI # 2468018	Infineon Technologies AG	MOSFET, P CH, -20V, -6.7A, SOIC-8 RoHS: Compliant	2004	1:$1.4100 10:$1.1700 100:$0.7520 1000:$0.6020 4000:$0.5090 8000:$0.4900 24000:$0.4710
IRF7404TRPBF DISTI # 2468018RL	Infineon Technologies AG	MOSFET, P CH, -20V, -6.7A, SOIC-8 RoHS: Compliant	0	1:$1.4100 10:$1.1700 100:$0.7520 1000:$0.6020 4000:$0.5090 8000:$0.4900 24000:$0.4710
IRF7404TRPBF DISTI # C1S322000484371	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R RoHS: Compliant	2803	250:$0.4073 100:$0.4084 25:$0.5642 10:$0.5669
IRF7404TRPBF DISTI # C1S322000484362	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R RoHS: Compliant	982	250:$0.4073 100:$0.4084 25:$0.5642 10:$0.5669
IRF7404TRPBF DISTI # C1S322000484353	Infineon Technologies AG	Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R RoHS: Compliant	8000	4000:$0.3660

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IRF7404TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

G***n

E**y

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes