ZXMN6A25GTA

ZXMN6A25GTA
Mfr. #:
ZXMN6A25GTA
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Chan 60V MOSFET (UMOS)
Lifecycle:
New from this manufacturer.
Datasheet:
ZXMN6A25GTA Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
ZXMN6A25GTA more Information
Product Attribute
Attribute Value
Manufacturer:
Diodes Incorporated
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-223-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
6.7 A
Rds On - Drain-Source Resistance:
50 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3.9 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.65 mm
Length:
6.7 mm
Series:
ZXMN6A25
Transistor Type:
1 N-Channel
Width:
3.7 mm
Brand:
Diodes Incorporated
Fall Time:
10.6 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26.2 ns
Typical Turn-On Delay Time:
3.8 ns
Unit Weight:
0.003951 oz
Tags
ZXMN6A2, ZXMN6A, ZXMN6, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOT-223-3
***ical
Trans MOSFET N-CH 60V 4.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N, 60V, SOT-223; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.7A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-223 (TO-261); Termination Type:SMD; Current, Idm Pulse:28.5A; Pin Configuration:1(G),2(D), 3(S), TAB(D); Power, Pd:2W; Typ Capacitance Ciss:1063pF; Voltage, Vds Max:60V; Voltage, Vgs th Min:1V
***ure Electronics
N-Channel 60 V 0.04 Ohm Enhancement Mode Mosfet - SOT-223
***et
Trans MOSFET N-CH 60V 7.5A 4-Pin(3+Tab) SOT-223 T/R
***ark
N CHANNEL MOSFET, 60V, 6.9A SOT-223; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.9A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:60V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:45mohm; Package / Case:SOT-223; Power Dissipation Pd:2W; Power Dissipation Pd:3.9W; Power Dissipation Ptot Max:2W; Pulse Current Idm:30.6A; SMD Marking:ZXMN6A09; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***ure Electronics
N-Channel 60 V 0.08 Ohm Power MOSFET Surface Mount - SOT-223-3
***sible Micro
Transistor, MOSFET, N-ch, 60V, 3.8A, SOT223, SMD
***ark
Mosfet, N-Ch, 60V, 5.3A, Sot-223 Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET N-Channel 60V 5.3A SOT223
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ark
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
***ure Electronics
ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
***p One Stop Global
Trans MOSFET P-CH 60V 4.3A Automotive 4-Pin(3+Tab) SOT-223 T/R
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W
***icontronic
Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2012)
***eco
Transistor MOSFET N Channel 55 Volt 5.1 Amp 4 Pin 3+ Tab SOT-223
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
*** Source Electronics
Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 5.1A SOT223
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 46.2 Milliohms,ID 5.1A,SOT-223,PD 1W,VF 1.3V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***nell
MOSFET, N, 55V, 5.1A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0462ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***emi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ
*** Source Electronics
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 60V 2.8A SOT-223
***ure Electronics
N-Channel 60 V 0.16 Ohm SMT Enhancement Mode Field Effect Transistor SOT-223
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.8A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Part # Mfg. Description Stock Price
ZXMN6A25GTA
DISTI # V72:2272_06708113
Zetex / Diodes IncTrans MOSFET N-CH 60V 6.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
28
  • 25:$0.6808
  • 10:$0.8086
  • 1:$0.9529
ZXMN6A25GTA
DISTI # ZXMN6A25GTATR-ND
Diodes IncorporatedMOSFET N-CH 60V SOT223
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$0.4950
ZXMN6A25GTA
DISTI # ZXMN6A25GTACT-ND
Diodes IncorporatedMOSFET N-CH 60V SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
ZXMN6A25GTA
DISTI # ZXMN6A25GTADKR-ND
Diodes IncorporatedMOSFET N-CH 60V SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
ZXMN6A25GTA
DISTI # 27539903
Zetex / Diodes IncTrans MOSFET N-CH 60V 6.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
28
  • 25:$0.6502
  • 14:$0.8088
ZXMN6A25GTA
DISTI # ZXMN6A25GTA
Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R (Alt: ZXMN6A25GTA)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 5000
  • 1000:$0.5940
  • 2000:$0.5678
  • 3000:$0.5438
  • 5000:$0.5289
  • 10000:$0.5218
  • 25000:$0.5080
  • 50000:$0.4950
ZXMN6A25GTA
DISTI # ZXMN6A25GTA
Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R - Cut TR (SOS) (Alt: ZXMN6A25GTA)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape
Americas - 216
  • 1:$0.5109
  • 10:$0.5099
  • 25:$0.5089
  • 50:$0.5079
  • 125:$0.5059
  • 250:$0.5049
  • 500:$0.5039
ZXMN6A25GTA
DISTI # ZXMN6A25GTA
Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZXMN6A25GTA)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.4839
  • 2000:$0.4829
  • 4000:$0.4819
  • 6000:$0.4809
  • 10000:$0.4799
ZXMN6A25GTA
DISTI # 70438844
Diodes IncorporatedMOSFET N-Channel 60V 6.7A SOT223
RoHS: Compliant
0
  • 25:$0.7700
  • 50:$0.7550
  • 125:$0.7320
  • 250:$0.7010
  • 625:$0.6550
ZXMN6A25GTA
DISTI # 522-ZXMN6A25GTA
Diodes IncorporatedMOSFET N-Chan 60V MOSFET (UMOS)
RoHS: Compliant
11667
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6460
  • 500:$0.5710
  • 1000:$0.4500
ZXMN6A25GTAZetex / Diodes Inc 1830
    ZXMN6A25GTAZetex / Diodes Inc 221
      ZXMN6A25GTA
      DISTI # C1S205700139331
      Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R
      RoHS: Compliant
      28
      • 25:$0.6502
      • 10:$0.8088
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      Availability
      Stock:
      17
      On Order:
      2000
      Enter Quantity:
      Current price of ZXMN6A25GTA is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.98
      $0.98
      10
      $0.84
      $8.40
      100
      $0.65
      $64.60
      500
      $0.57
      $285.50
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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