MHT1002GNR3

MHT1002GNR3
Mfr. #:
MHT1002GNR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
Lifecycle:
New from this manufacturer.
Datasheet:
MHT1002GNR3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
RoHS:
Y
Technology:
Si
Packaging:
Reel
Brand:
NXP / Freescale
Moisture Sensitive:
Yes
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Part # Aliases:
935315613528
Unit Weight:
0.108111 oz
Tags
MHT10, MHT1, MHT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
***ark
HEATING AND COOKING, RUGGED RF POWER LDMOS TRANSISTOR 915MHz, 350W CW, 50V
***W
RF Power Transistor,915 to 915 MHz, 387 W, Typ Gain in dB is 20.7 @ 915 MHz, 48 V, LDMOS, SOT1825
***et
Power LDMOS Transistor N-Channel 48V 350W 915MHz 5-Pin SMT T/R
***W
Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1727
***et
RF Amp Module Single Power Amp 960MHz 32V 17-Pin TO-272 W T/R
*** Semiconductors SCT
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16F
***nell
RF FET, 65V, 728MHZ-960MHZ, TO-272WB; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 728MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-272WB; No.
***W
Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1726
*** Source Electronics
RF Amp Single Power Amp 960MHz 32V 17-Pin TO-270 W T/R / IC PWR AMP RF 900MHZ TO-270-16
*** Semiconductors SCT
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16F
***nell
RF FET, 65V, 728MHZ-960MHZ, TO-270WB; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 728MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270WB; No. of Pins: 16Pins; Operating Temperature Max: 150°C; Product Range: MW7IC930N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ical
RF Amp Module Single Power Amp 960MHz 32V 17-Pin TO-270 W GULL T/R
***W
Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1723
*** Semiconductors SCT
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V
***W
Amplifier,728 to 960 MHz, 26 W, Typ Gain in dB is 36.2 @ 940 MHz, 28 V, LDMOS, SOT1720
***p One Stop Global
RF Amp Module Dual Power Amp 960MHz 32V 15-Pin TO-270 W T/R
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V
***et
RF Amp Chip Dual Power Amplifier 960MHz 714-Pin TO-270WBG T/R
***W
Amplifier,728 to 960 MHz, 26 W, Typ Gain in dB is 36.2 @ 940 MHz, 28 V, LDMOS, SOT1720
***p One Stop Global
RF Amp Module Dual Power Amp 960MHz 32V 15-Pin TO-270 W GULL T/R
Part # Mfg. Description Stock Price
MHT1002GNR3
DISTI # MHT1002GNR3-ND
NXP SemiconductorsIC RF AMP 915MHZ OM-780G-4L
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$211.2289
MHT1002GNR3
DISTI # MHT1002GNR3
Avnet, Inc.Trans MOSFET N-CH 5-Pin SMT T/R - Tape and Reel (Alt: MHT1002GNR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 250:$215.2900
  • 500:$206.7900
  • 1000:$198.7900
  • 1500:$191.4900
  • 2500:$187.8900
MHT1002GNR3
DISTI # 841-MHT1002GNR3
NXP SemiconductorsRF MOSFET Transistors MHT1002GN/FM4///REEL 13 Q2 DP
RoHS: Compliant
0
  • 250:$192.0400
Image Part # Description
MHT1008NT1

Mfr.#: MHT1008NT1

OMO.#: OMO-MHT1008NT1

RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V
MHT1001HR5

Mfr.#: MHT1001HR5

OMO.#: OMO-MHT1001HR5

RF MOSFET Transistors 2.4GHZ HV6 40W
MHT1000HR5

Mfr.#: MHT1000HR5

OMO.#: OMO-MHT1000HR5

RF MOSFET Transistors MOSFET 2450 MHz 140 W 28 V
MHT1003NR3

Mfr.#: MHT1003NR3

OMO.#: OMO-MHT1003NR3-NXP-SEMICONDUCTORS

IC TRANS RF LDMOS 2450MHZ
MHT1000H

Mfr.#: MHT1000H

OMO.#: OMO-MHT1000H-1190

New and Original
MHT1001H

Mfr.#: MHT1001H

OMO.#: OMO-MHT1001H-1190

New and Original
MHT1004N

Mfr.#: MHT1004N

OMO.#: OMO-MHT1004N-1190

New and Original
MHT1008NT1515

Mfr.#: MHT1008NT1515

OMO.#: OMO-MHT1008NT1515-1152

RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V
MHT1002GNR3

Mfr.#: MHT1002GNR3

OMO.#: OMO-MHT1002GNR3-NXP-SEMICONDUCTORS

IC RF AMP 915MHZ OM-780G-4L
MHT1002NR3

Mfr.#: MHT1002NR3

OMO.#: OMO-MHT1002NR3-NXP-SEMICONDUCTORS

RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of MHT1002GNR3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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