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QPD1003

QPD1003
Mfr. #:
QPD1003
Manufacturer:
Qorvo
Description:
RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
Lifecycle:
New from this manufacturer.
Datasheet:
QPD1003 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
QPD1003 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
19.9 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
50 V
Vgs - Gate-Source Breakdown Voltage:
145 V
Id - Continuous Drain Current:
15 A
Output Power:
540 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
370 W
Mounting Style:
SMD/SMT
Package / Case:
RF-565
Packaging:
Tray
Configuration:
Single
Operating Frequency:
1.2 GHz to 1.4 GHz
Operating Temperature Range:
- 40 C to + 85 C
Series:
QPD
Brand:
Qorvo
Development Kit:
QPD1003PCB401
Product Type:
RF JFET Transistors
Factory Pack Quantity:
18
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 2.8 V
Part # Aliases:
1131389
Tags
QPD100, QPD10, QPD1, QPD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Transistor, 1.2 - 1.4 GHz, 500 W, 50 V, GaN, RF-565 Pkg
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
QPD1003
DISTI # QPD1003-ND		RF Micro Devices IncRF TRANSISTOR
RoHS: Compliant
Container: Bulk		Limited Supply - Call
    QPD1003
    DISTI # 772-QPD1003    		QorvoRF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
    RoHS: Compliant    		15
    • 1:$612.0000
    QPD1003 EVB
    DISTI # 772-QPD1003EB    		QorvoRF Development Tools QPD1003 1.2-1.4GHz EVAL Board
    RoHS: Compliant    		3
    • 1:$875.0000
    1131389
    DISTI # QPD1003    		QorvoRF POWER TRANSISTOR
    RoHS: Compliant    		4
    • 1:$576.1800
    Image Part # Description
    600S820JT250XT

    Mfr.#: 600S820JT250XT

    OMO.#: OMO-600S820JT250XT-AMERICAN-TECHNICAL-CERAMICS

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 250volts 82pF 5%
    600S270JT250XT

    Mfr.#: 600S270JT250XT

    OMO.#: OMO-600S270JT250XT-AMERICAN-TECHNICAL-CERAMICS

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 250volts 27pF 5%
    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of QPD1003 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $612.00
    $612.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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