MRFE6VP61K25HR5

Mfr. #:: MRFE6VP61K25HR5
Manufacturer:: NXP / Freescale
Description:: RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
Lifecycle:: New from this manufacturer.
Datasheet:: MRFE6VP61K25HR5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: MRFE6VP61K25HR5 more Information

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Id - Continuous Drain Current:: 10 uA

Vds - Drain-Source Breakdown Voltage:: 133 V

Gain:: 24 dB

Output Power:: 1.25 kW

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: NI-1230

Packaging:: Reel

Configuration:: Single

Operating Frequency:: 1.8 MHz, 600 MHz

Series:: MRFE6VP61K25H

Type:: RF Power MOSFET

Brand:: NXP / Freescale

Pd - Power Dissipation:: 1.333 kW

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: 10 V

Vgs th - Gate-Source Threshold Voltage:: 2.2 V

Part # Aliases:: 935314411178

Unit Weight:: 0.464036 oz

Tags: MRFE6VP61K25H, MRFE6VP61, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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MRFE6VP61K25HR5 Description

***ark: Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 1250 W Cw, 50 V Rohs Compliant: Yes

***W: RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787

***-Wing Technology: Tape & Reel (TR) N-CHANNEL EAR99 MRFE6VP61K25 RF Mosfet 100mA 1250W 24dB 230MHz

***ure Electronics: MRFE6VP6x Series 133 V RF 230 MHz Dual Channel Power LDMOS Transistor - NI-1230

***nell: TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;

***W: RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.5 @ 512 MHz, 50 V, LDMOS, SOT1732

***ure Electronics: MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2

***nell: TRANSISTOR, RF, 133V, TO-270-2; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***W: RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827

***roFlash: RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

***nell: TRANSISTOR, RF, 133V, NI-780H-4L; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: NI-780; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: -; SVHC: No SVHC (15-Jan-2019)

***ark: LDMOS, RF, 100W, NI-780; Transistor Type:RF MOSFET; Drain Source Voltage Vds:133V DC; Power Dissipation Pd:100W; Operating Frequency Range:1.8MHz to 2GHz; Operating Temperature Min:-40°C; Operating Temperature Max:150°C

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***W: RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS

***ark: RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

MRFE6VP61K25HR5 More Information

MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs: NXP's MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Features include devices can be used in either a single-ended or in a push-pull configuration, are suitable for linear application with appropriate biasing, and these devices have an integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
MRFE6VP61K25HR5 DISTI # V72:2272_07190034	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R RoHS: Compliant	44	25:$161.2400 10:$162.8400 1:$171.3300
MRFE6VP61K25HR5 DISTI # MRFE6VP61K25HR5CT-ND	NXP Semiconductors	FET RF 2CH 133V 230MHZ NI-1230 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	59In Stock	10:$167.3400 1:$174.7200
MRFE6VP61K25HR5 DISTI # MRFE6VP61K25HR5DKR-ND	NXP Semiconductors	FET RF 2CH 133V 230MHZ NI-1230 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	59In Stock	10:$167.3400 1:$174.7200
MRFE6VP61K25HR5 DISTI # MRFE6VP61K25HR5TR-ND	NXP Semiconductors	FET RF 2CH 133V 230MHZ NI-1230 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	50In Stock	50:$158.8818
MRFE6VP61K25HR5 DISTI # 25766998	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R RoHS: Compliant	44	25:$161.1800 10:$162.7200 1:$171.2600
MRFE6VP61K25HR5 DISTI # MRFE6VP61K25HR5	NXP Semiconductors	Trans MOSFET N-CH 133V 4-Pin NI-1230H T/R (Alt: MRFE6VP61K25HR5) RoHS: Compliant Min Qty: 50 Container: Tape and Reel	Europe - 40	50:€141.3900 100:€140.8900 200:€140.3900 300:€139.8900 500:€139.4900
MRFE6VP61K25HR5 DISTI # MRFE6VP61K25HR5	NXP Semiconductors	Trans MOSFET N-CH 133V 4-Pin NI-1230H T/R - Tape and Reel (Alt: MRFE6VP61K25HR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$155.5900 100:$155.1900 200:$154.7900 300:$154.4900 500:$154.0900
MRFE6VP61K25HR5 DISTI # MRFE6VP61K25HR5	NXP Semiconductors	Trans MOSFET N-CH 133V 4-Pin NI-1230H T/R (Alt: MRFE6VP61K25HR5) RoHS: Compliant Min Qty: 50 Container: Tape and Reel	Asia - 0	50:$170.6571 100:$165.9167 150:$161.4324 250:$157.1842 500:$155.1429 1250:$153.1539 2500:$149.3250
MRFE6VP61K25HR5 DISTI # 19T6330	NXP Semiconductors	Trans MOSFET N-CH 133V 4-Pin NI-1230H T/R - Product that comes on tape, but is not reeled (Alt: 19T6330) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$256.4100 10:$245.5700 25:$241.9400
MRFE6VP61K25HR5 DISTI # 19T6330	NXP Semiconductors	RF POWER FET, N CHANNEL, 125V 1250W, NI-1230,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:1.333kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-1230 RoHS Compliant: Yes	8	1:$173.2100 10:$164.8500 25:$162.5400
MRFE6VP61K25HR5 DISTI # 29X4272	NXP Semiconductors	RF POWER FET, N CHANNEL, 125V 1250W, NI-1230, FULL REEL,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:1.333kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,Product Range:- RoHS Compliant: Yes	0	1:$273.8300 10:$268.0500 25:$250.6900 50:$221.7700
MRFE6VP61K25HR5. DISTI # 81AC9282	NXP Semiconductors	WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8-600 MHZ, 1250 W CW, 50 V	0	1:$155.5900 100:$155.1900 200:$154.7900 300:$154.4900 500:$154.0900
MRFE6VP61K25HR5	Freescale Semiconductor	RF Power Field-Effect Transistor RoHS: Compliant	170	1000:$157.1800 500:$165.4600 100:$172.2600 25:$179.6400 1:$193.4600
MRFE6VP61K25HR6 DISTI # 841-MRFE6VP61K25HR6	NXP Semiconductors	RF MOSFET Transistors VHV6 1.25KW ISM NI1230H RoHS: Compliant	384	1:$174.7200 5:$170.8300 10:$167.3400 25:$164.8700 50:$161.8800 100:$160.3900 150:$158.8900
MRFE6VP61K25HR5 DISTI # 841-MRFE6VP61K25HR5	NXP Semiconductors	RF MOSFET Transistors VHV6 1.25KW ISM NI1230H RoHS: Compliant	83	1:$173.2100 5:$169.0400 10:$164.8500 25:$162.5400 50:$162.5400
MRFE6VP61K25HR5 DISTI # MRFE6VP61K25HR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	50:$158.2400
MRFE6VP61K25HR5 DISTI # 2776254	NXP Semiconductors	TRANSISTOR, RF, 133V, NI-1230H-4S RoHS: Compliant	25	1:£134.0000 5:£131.0000 10:£123.0000
MRFE6VP61K25HR5 DISTI # C1S233100200551	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R RoHS: Compliant	44	25:$161.1800 10:$162.7200 1:$171.2600
MRFE6VP61K25HR5 DISTI # 2776254	NXP Semiconductors	TRANSISTOR, RF, 133V, NI-1230H-4S RoHS: Compliant	27	1:$285.4400 5:$275.9200

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MRFE6VP61K25HR5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes