IRF7805TRPBF

Mfr. #:: IRF7805TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 30V 13A 11mOhm 22nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7805TRPBF Datasheet
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HTML Datasheet:: IRF7805TRPBF Datasheet IRF7805TRPBF Datasheet (P4-P6)
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More Information:: IRF7805TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 13 A

Rds On - Drain-Source Resistance:: 11 mOhms

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 22 nC

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 1 N-Channel

Width:: 3.9 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001555586

Unit Weight:: 0.019048 oz

Tags: IRF7805TRP, IRF7805T, IRF7805, IRF780, IRF78, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

IRF7805TRPBF Description

***ark: Mosfet Transistor, N Channel, 13 A, 30 V, 11 Mohm, 4.5 V, 3 V

***(Formerly Allied Electronics): MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 9.2Milliohms; ID 13A; SO-8; PD 2.5W; VGS +/-12V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissipa

***(Formerly Allied Electronics): IRF7463PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 14A 8-Pin SOIC Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipat

***ark: Mosfet Transistor, N Channel, 14.5 A, 30 V, 0.007 Ohm, 4.5 V, 1 V

***ure Electronics: IRF7809AVPBF: 30 V 13.3 A 9 mOhm SMT Hexfet Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation

***et: Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***(Formerly Allied Electronics): MOSFET, 30V, 13A, 11 MOHM, 22 NC QG, SO-8

*** Electronic Components: IGBT Transistors MOSFET MOSFT 30V 13A 11mOhm 22nC

***S: French Electronic Distributor since 1988

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes

***(Formerly Allied Electronics): IRF8714PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC

***roFlash: Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET¬Æ Power Mosfet - SOIC-8

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P

***ure Electronics: Single N-Channel 30 V 0.009 Ohms Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 30V 12.4A 8-Pin SOIC N T/R

***nsix Microsemi: Small Signal Field-Effect Transistor, 12.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: N-Channel MOSFETs 30V 12A 2.95W

***S: French Electronic Distributor since 1988

***ure Electronics: N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R

***nell: MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:18A; On State Resistance:0.0086ohm; Voltage Vgs Rds on Measurement:10V; Case Style:SO-8; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Max Current Id:12.7A; Max Junction Temperature Tj:150°C; Max Voltage Vds:25V; Max Voltage Vgs:12V; Max Voltage Vgs th:1.4V; Min Voltage Vgs th:0.6V; Power Dissipation:2.5W; Power Dissipation Pd:5W; Rds Measurement Voltage:10V; Rise Time:11ns; Transistor Case Style:SO

***ure Electronics: Single N-Channel 30 V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET; N Ch.; 30V; 14A; 8.5 MOHM; 8.3 NC QG; SO-8; Pb-Free

***ical: Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0069Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***eco: Transistor MOSFET Negative Channel 30 Volt 13A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS +/-20V;VF 1

***ure Electronics: Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

***ical: Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 7.3A, 10V 13A Ta -55°C~150°C TJ MOSFET N-CH 30V 13A 8-SOIC

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat

***Yang: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***ure Electronics: N-Channel 30 V 10 mO Surface Mount PowerTrench® Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ

***et Europe: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11.6A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ure Electronics: N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***et Japan: Transistor MOSFET Array Dual N-CH 30V 25A 8-Pin PowerPAK SO T/R

***ment14 APAC: MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:30V; On

***nell: MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 22W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

IRF7805TRPBF More Information

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRF7805TRPBF DISTI # V72:2272_13890704	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R	2961	1000:$0.4788 500:$0.5775 250:$0.6175 100:$0.6381 25:$0.7765 10:$0.7798 1:$0.8790
IRF7805TRPBF DISTI # IRF7805PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4818In Stock	1000:$0.6652 500:$0.8243 100:$1.0430 10:$1.3020 1:$1.4600
IRF7805TRPBF DISTI # IRF7805PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4818In Stock	1000:$0.6652 500:$0.8243 100:$1.0430 10:$1.3020 1:$1.4600
IRF7805TRPBF DISTI # IRF7805PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.6072
IRF7805TRPBF DISTI # 26196315	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R	2961	1000:$0.4788 500:$0.5775 250:$0.6175 100:$0.6381 25:$0.7765 18:$0.7798
IRF7805TRPBF DISTI # IRF7805TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7805TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.4039 8000:$0.3899 16000:$0.3749 24000:$0.3629 40000:$0.3559
IRF7805TRPBF DISTI # IRF7805TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R (Alt: IRF7805TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.4973 8000:$0.4768 12000:$0.4704 20000:$0.4521 40000:$0.4463 100000:$0.4351 200000:$0.4245
IRF7805TRPBF DISTI # SP001555586	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R (Alt: SP001555586) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.4549 8000:€0.4539 16000:€0.4529 24000:€0.4509 40000:€0.4499
IRF7805TRPBF-1 DISTI # IRF7805TRPBF-1	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SO - Tape and Reel (Alt: IRF7805TRPBF-1) RoHS: Not Compliant Min Qty: 4000 Container: Reel	Americas - 0
IRF7805TRPBF DISTI # 34AC1786	Infineon Technologies AG	MOSFET, N-CH, 30V, 13A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0092ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	3791	1:$1.1600 10:$0.9830 25:$0.9070 50:$0.8310 100:$0.7550 250:$0.7110 500:$0.6670 1000:$0.5270
IRF7805TRPBF DISTI # 70017721	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 9.2 Milliohms,ID 13A,SO-8,PD 2.5W,VGS +/-12V RoHS: Compliant	0	4000:$1.6300 8000:$1.5970 20000:$1.5490 40000:$1.4830 100000:$1.3860
IRF7805TRPBF	International Rectifier	Power Field-Effect Transistor, 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	8000	1000:$0.4600 500:$0.4900 100:$0.5100 25:$0.5300 1:$0.5700
IRF7805TRPBF DISTI # 942-IRF7805TRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 13A 11mOhm 22nC RoHS: Compliant	4075	1:$1.1600 10:$0.9830 100:$0.7550 500:$0.6670 1000:$0.5270
IRF7805TRPBF	International Rectifier	MOSFET Transistor, N-Channel, SO	1131	378:$0.4738 67:$0.5306 1:$1.5160
IRF7805TRPBF	International Rectifier		1530
IRF7805TRPBF	International Rectifier	RoHS: Compliant	Europe - 16000
IRF7805TRPBF	International Rectifier	INSTOCK	3563
IRF7805TRPBF DISTI # C1S322000486087	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R RoHS: Compliant	2961	250:$0.6175 100:$0.6381 25:$0.7765 10:$0.7798
IRF7805TRPBF DISTI # 2781121	Infineon Technologies AG	MOSFET, N-CH, 30V, 13A, SOIC RoHS: Compliant	3866	5:£0.8080 25:£0.7250 100:£0.5570 250:£0.5250 500:£0.4920
IRF7805TRPBF DISTI # 2781121	Infineon Technologies AG	MOSFET, N-CH, 30V, 13A, SOIC RoHS: Compliant	3791	5:$2.0400 25:$1.7700 100:$1.4500 250:$1.2200 500:$1.0600 1000:$0.9990 5000:$0.9480
IRF7805TRPBF DISTI # XSLY00000000845	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000:$0.4400

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IRF7805TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes