IRF9410TRPBF

IRF9410TRPBF
Mfr. #:
IRF9410TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 30V 7A 30mOhm 18nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF9410TRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF9410TRPBF DatasheetIRF9410TRPBF Datasheet (P4-P6)IRF9410TRPBF Datasheet (P7)
ECAD Model:
More Information:
IRF9410TRPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
50 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
18 nC
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Width:
3.9 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
4000
Subcategory:
MOSFETs
Part # Aliases:
SP001551686
Unit Weight:
0.019048 oz
Tags
IRF9410TRP, IRF9410T, IRF941, IRF94, IRF9, IRF
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    U***I
    U***I
    US

    Yu

    2019-06-25
    C***e
    C***e
    RO

    Thank you!

    2019-01-11
    R***e
    R***e
    CL

    excelente

    2019-05-25
    E***v
    E***v
    UA

    Thank you, I am very pleased

    2019-03-22
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7A;SO-8;PD 2.5W;VGS +/-20V;gFS 14
***ure Electronics
Single N-Channel 30 V 0.03 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC Tube / MOSFET N-CH 30V 7A 8-SOIC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 30V, 7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 7A; Current Temperature: 25°C; External Depth: 5.2mm; External Length / Height: 1.75mm; External Width: 4.05mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: a; Pin Format: 1 NC; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Pulse Current Idm: 37A; Row Pitch: 6.3mm; SMD Marking: F9410; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Part # Mfg. Description Stock Price
IRF9410TRPBF
DISTI # V72:2272_13890171
Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R2712
  • 1000:$0.2306
  • 500:$0.2793
  • 250:$0.2824
  • 100:$0.2854
  • 25:$0.3940
  • 10:$0.3988
  • 1:$0.4597
IRF9410TRPBF
DISTI # IRF9410PBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 7A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.2720
IRF9410TRPBF
DISTI # 30266180
Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R4000
  • 4000:$0.2592
IRF9410TRPBF
DISTI # 30559157
Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R2712
  • 1000:$0.2306
  • 500:$0.2793
  • 250:$0.2824
  • 100:$0.2854
  • 37:$0.3940
IRF9410TRPBF
DISTI # IRF9410TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 7A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF9410TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.1959
  • 8000:$0.1889
  • 16000:$0.1819
  • 24000:$0.1759
  • 40000:$0.1729
IRF9410TRPBF
DISTI # SP001551686
Infineon Technologies AGTrans MOSFET N-CH 30V 7A 8-Pin SOIC T/R (Alt: SP001551686)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Europe - 0
  • 4000:€0.2569
  • 8000:€0.2099
  • 16000:€0.1929
  • 24000:€0.1779
  • 40000:€0.1649
IRF9410TRPBF
DISTI # 32AC7477
Infineon Technologies AGMOSFET, N-CH, 40V, 7A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation , RoHS Compliant: Yes4104
  • 1:$0.6300
  • 10:$0.5200
  • 25:$0.4600
  • 50:$0.4000
  • 100:$0.3400
  • 250:$0.3170
  • 500:$0.2930
  • 1000:$0.2700
IRF9410TRPBF
DISTI # 70017729
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 0.03Ohm,ID 7A,SO-8,PD 2.5W,VGS +/-20V,gFS 14
RoHS: Compliant
0
  • 4000:$0.2900
IRF9410TRPBF
DISTI # 942-IRF9410TRPBF
Infineon Technologies AGMOSFET MOSFT 30V 7A 30mOhm 18nC
RoHS: Compliant
5159
  • 1:$0.6300
  • 10:$0.5200
  • 100:$0.3400
  • 1000:$0.2700
  • 4000:$0.2300
  • 8000:$0.2200
  • 24000:$0.2100
IRF9410TRPBF
DISTI # 1623278
Infineon Technologies AGMOSFET N-CH 30V 7A HEXFET SOIC8, RL7880
  • 4000:£0.1740
  • 8000:£0.1670
  • 12000:£0.1620
IRF9410TRPBF
DISTI # 2777384
Infineon Technologies AGMOSFET, N-CH, 40V, 7A, SOIC
RoHS: Compliant
4104
  • 5:$0.8550
  • 25:$0.7450
  • 100:$0.6080
IRF9410TRPBF
DISTI # 2777384
Infineon Technologies AGMOSFET, N-CH, 40V, 7A, SOIC
RoHS: Compliant
4109
  • 5:£0.4100
  • 25:£0.3360
  • 100:£0.2620
  • 250:£0.2490
  • 500:£0.2360
IRF9410TRPBF
DISTI # C1S322000595136
Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R
RoHS: Compliant
2800
  • 250:$0.2824
  • 100:$0.2854
  • 25:$0.3940
  • 10:$0.3988
IRF9410TRPBF
DISTI # C1S322000585759
Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 4000:$0.2810
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D12/CRCW0805-C 100 10K 1% ET1
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Mfr.#: CRCW0402100RFKEDC

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D10/CRCW0402-C 100 100R 1% ET7
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Mfr.#: ADUM260N0BRIZ

OMO.#: OMO-ADUM260N0BRIZ-ANALOG-DEVICES

DGTL ISO 5KV 6CH GEN PRP 16SOIC
RK73H1JTTD6192F

Mfr.#: RK73H1JTTD6192F

OMO.#: OMO-RK73H1JTTD6192F-1090

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Mfr.#: RK73H1JTTD8252F

OMO.#: OMO-RK73H1JTTD8252F-1090

Thick Film Resistors - SMD 1/10watts 82.5Kohms
Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of IRF9410TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.63
$0.63
10
$0.53
$5.29
100
$0.34
$34.10
1000
$0.27
$273.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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