TPS1101DG4

Mfr. #:: TPS1101DG4
Description:: MOSFET P-CH 15V 2.3A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: TPS1101DG4 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: TPS1101DG4 more Information TPS1101DG4 Product Details

Product Attribute
Attribute Value

Tags: TPS1101D, TPS1101, TPS110, TPS11, TPS1, TPS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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TPS1101DG4 Description

***as Instruments: Single P-channel Enhancement-Mode MOSFET 8-SOIC

***ical: Trans MOSFET P-CH Si 15V 2.3A 8-Pin SOIC Tube

***ser: Power Supply Support Single P-Ch Enh-Mode MOSFET

***ponent Stockers USA: 2300 mA 15 V P-CHANNEL Si SMALL SIGNAL MOSFET

*** Stop Electro: Small Signal Field-Effect Transistor, 2.3A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: MOSFET; Drain Source Voltage, Vds:-15V; On Resistance, Rds(on):90mohm; No. of Pins:8; Leaded Process Compatible:Yes; Package/Case:8-SOIC; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

***et: Transistor MOSFET Array Dual N-CH 12V 2A 6-Pin X2-DFN1010 T/R

***i-Key: MOSFET 2N-CHA 12V 2A DFN1310

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V

***ark: Mosfet Transistor, P Channel, 16 A, 12 V, 7 Mohm, -4.5 V, -900 Mv

***eco: Transistor MOSFET Positive Channel 20 Volt 16A 8-Pin SOIC

***ure Electronics: Single P-Channel 12 V 7 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET

***ineon SCT: -12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET, P, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipat

***(Formerly Allied Electronics): MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de

***ark: Mosfet Transistor, Dual P Channel, 9.2 A, 12 V, 17 Mohm, -4.5 V, -900 Mv

***eco: Transistor MOSFET Positive Channel 12 Volt 9.2A 8-Pin SOIC T/R

***et Europe: Transistor MOSFET Array Dual P-CH 12V 9.2A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 12 V 17 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual P-Channel MOSFET

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -9

***ure Electronics: Single N-Channel 12 V 0.0027 Ohm Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 12V 22.5A 8-Pin SOIC N T/R

***ark: Mosfet, N Channel, 12V, 34A, Soic-8, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:34A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:5.7W Rohs Compliant: Yes

***nell: MOSFET, N CH, 12V, 0.0021OHM, 34A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:5.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

***ure Electronics: Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8

***enic: 20V 4A 58m´Î@4.5V4.8A 3.1W 1.4V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS

***nell: MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-50°C to +150°C

***et: Transistor MOSFET Array Dual P-CH 12V 6.7A 8-Pin SOIC T/R

***ure Electronics: DUAL P-CH MOSFET SO-8 12V 18MOHM @ 4.5V- LEAD(PB) AND HALOGEN FREE

***enic: 12V 6.7A 18m´Î@4.5V8.9A 1.1W 1V@350Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS

Market price

Part #	Description	Stock	Price
TPS1101DG4 DISTI # TPS1101DG4-ND	MOSFET P-CH 15V 2.3A 8-SOIC RoHS: Compliant Min Qty: 375 Container: Tube	Temporarily Out of Stock	375:$1.6500
TPS1101DG4 DISTI # 595-TPS1101DG4	MOSFET Single P-Ch Enh-Mode MOSFET RoHS: Compliant	0

Related products

Image	Part #	Description
	Mfr.#: TPS1100PWR OMO.#: OMO-TPS1100PWR	MOSFET NPN Enh Mode
	Mfr.#: TPS1100PW OMO.#: OMO-TPS1100PW	MOSFET Single P-Ch Enh-Mode MOSFET
	Mfr.#: TPS1120DG4 OMO.#: OMO-TPS1120DG4	MOSFET Dual P-Ch Enh-Mode MOSFET
	Mfr.#: TPS1101D OMO.#: OMO-TPS1101D-TEXAS-INSTRUMENTS	Darlington Transistors MOSFET Single P-Ch Enh-Mode MOSFET
	Mfr.#: TPS1100DR OMO.#: OMO-TPS1100DR-TEXAS-INSTRUMENTS	RF Bipolar Transistors MOSFET Single P-Ch Enh-Mode MOSFET
	Mfr.#: TPS1101DE4 OMO.#: OMO-TPS1101DE4-1190	New and Original
	Mfr.#: TPS1110DR OMO.#: OMO-TPS1110DR-1190	New and Original
	Mfr.#: TPS1117RGYT OMO.#: OMO-TPS1117RGYT-1190	New and Original
	Mfr.#: TPS1120 OMO.#: OMO-TPS1120-1190	New and Original
	Mfr.#: TPS1120DRG4 OMO.#: OMO-TPS1120DRG4-1190	MOSFET Dual P-Ch Enh-Mode MOSFET

Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of TPS1101DG4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.48~~; ~~$2.48~~

10: ~~$2.35~~; ~~$23.51~~

100: ~~$2.23~~; ~~$222.75~~

500: ~~$2.10~~; ~~$1 051.90~~

1000: ~~$1.98~~; ~~$1 980.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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TPS1101DG4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes