CSD18504KCS

Mfr. #:: CSD18504KCS
Description:: MOSFET 40V N-Ch NexFET Pwr MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: CSD18504KCS Datasheet
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More Information:: CSD18504KCS more Information CSD18504KCS Product Details

Product Attribute
Attribute Value

Manufacturer:: Texas Instruments

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.9 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 19 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 93 W

Configuration:: Single

Tradename:: NexFET

Packaging:: Tube

Height:: 16.51 mm

Length:: 10.67 mm

Series:: CSD18504KCS

Transistor Type:: 1 N-Channel

Width:: 4.7 mm

Brand:: Texas Instruments

Forward Transconductance - Min:: 72 S

Fall Time:: 4.2 ns

Product Type:: MOSFET

Rise Time:: 5.2 ns

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 11.2 ns

Typical Turn-On Delay Time:: 4.4 ns

Unit Weight:: 0.211644 oz

Tags: CSD18504, CSD1850, CSD185, CSD18, CSD1, CSD

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Vacuum Packaging with PL

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CSD18504KCS Description

***as Instruments: 40-V, N channel NexFET™ power MOSFET, single TO-220, 7 mOhm 3-TO-220 -55 to 175

***ical: Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube

*** Stop Electro: Power Field-Effect Transistor, 53A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220

***nell: MOSFET, N-CH, 40V, 100A, 3-TO220; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 40V; Résistance Rds(on): 0.0055ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.9V; Dissipation de puissance P

***ment14 APAC: MOSFET, N-CH, 40V, 100A, 3-TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:93W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

***ure Electronics: N-Channel 30 V 0.005 O Flange Mount STripFET V Power MOSFET - TO-220

***icroelectronics: N-channel 30 V, 0.0042 Ohm , 80 A, TO-220; Power MOSFETs

***nell: MOSFET, N CH, 30V, 80A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 90A TO-220

***ure Electronics: Single N-Channel 30 V 150 W 47 nC Silicon Through Hole Mosfet - TO-220-3

***enic: 30V 90A 150W 6.5m´Î@10V45A 2.5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***ponent Stockers USA: 90 A 30 V 0.0065 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 90A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 30 V, 0.0042 Ohm, 75 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET

***ical: Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Tube

*** Electronic Components: IGBT Transistors MOSFET N-Ch 30V 0.0042 Ohm 75A STripFET VI

***el Electronic: INTERSIL ISL55004IBZOperational Amplifier, Quad, 220 MHz, 4 Amplifier, 300 V/s,2.5V to15V, SOIC, 14 Pins

***r Electronics: Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: Single N-Channel 40 V 3.9 mOhm 59 nC OptiMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220 Tube

*** Stop Electro: Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS

***ment14 APAC: MOSFET, N CH, 80A, 40V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; Current Id Max:80A; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.9 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 5.4 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***ure Electronics: Single N-Channel 40 V 4.1 mOhm 42 nC OptiMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220 Tube

***el Electronic: INFINEON - IPP041N04NGXKSA1 - MOSFET, N CH, 80A, 40V, PG-TO220-3

*** Stop Electro: Power Field-Effect Transistor, 80A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS

***ment14 APAC: MOSFET, N CH, 80A, 40V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 4.1 / Gate-Source Voltage V = 20 / Fall Time ns = 4.8 / Rise Time ns = 3.8 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***ical: Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***AS INSTRUMENTS INCORPORATED: This 40 V, 5.5 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18504KCS More Information

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Part #	Description	Stock	Price
CSD18504KCS DISTI # V39:1801_07248820	Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	129	2500:$0.5795 1000:$0.6269 500:$0.8008 100:$0.9427 50:$1.1976 10:$1.2193 1:$1.5772
CSD18504KCS DISTI # V36:1790_07248820	Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	1000:$0.5114
CSD18504KCS DISTI # 296-35578-5-ND	MOSFET N-CH 40V TO220-3 Min Qty: 1 Container: Tube	128In Stock	5000:$0.5865 2500:$0.6174 1000:$0.6615 500:$0.8379 100:$1.0143 50:$1.2348 10:$1.3010 1:$1.4600
CSD18504KCS DISTI # 26595707	Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	129	2500:$0.5649 1000:$0.6269 500:$0.8008 100:$0.9427 50:$1.1976 12:$1.2193
CSD18504KCS DISTI # CSD18504KCS	Trans MOSFET N-CH 40V 85A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: CSD18504KCS) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$0.5533 3000:$0.5690 1800:$0.5888 1200:$0.6091 600:$0.6401
CSD18504KCS DISTI # CSD18504KCS	Trans MOSFET N-CH 40V 85A 3-Pin(3+Tab) TO-220 Tube (Alt: CSD18504KCS) Min Qty: 50 Container: Tube	Europe - 0	500:€0.5429 300:€0.5819 200:€0.6789 100:€0.7409 50:€0.9059
CSD18504KCS DISTI # 55W6153	MOSFET, N CHANNEL, 40V, 100A, 0.0055OHM, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:93WRoHS Compliant: Yes RoHS: Compliant	311	1:$0.4470 10:$0.4470 100:$0.4470 500:$0.4470 1000:$0.4470 2500:$0.4470 10000:$0.4470
CSD18504KCS . DISTI # 63W3705	MOSFET Transistor, N Channel, 100 A, 40 V, 0.0055 ohm, 10 V, 1.9 V RoHS Compliant: Yes RoHS: Compliant	50	1:$0.2900 10:$0.2900 100:$0.2900 500:$0.2900 1000:$0.2900 2500:$0.2900 10000:$0.2900
CSD18504KCS	40V, N ch NexFET MOSFET™, single TO-220, 7mOhm	3001	1000:$0.5000 750:$0.5500 500:$0.6700 250:$0.7900 100:$0.8600 25:$0.9900 10:$1.0600 1:$1.1900
CSD18504KCS DISTI # 595-CSD18504KCS	MOSFET 40V N-Ch NexFET Pwr MOSFET RoHS: Compliant	564	1:$1.4500 10:$1.2300 100:$0.9480 500:$0.8370 1000:$0.6610 2500:$0.5860 10000:$0.5640
CSD18504KCS	Power Field-Effect Transistor, 53A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 RoHS: Compliant	8350	1000:$0.5800 500:$0.6100 100:$0.6400 25:$0.6700 1:$0.7200
CSD18504KCS DISTI # CSD18504KCS	Transistor: N-MOSFET,unipolar,40V,100A,115W,TO220-3	39	3:$1.0800 1:$1.4600
CSD18504KCS . DISTI # 2289409	MOSFET, N-CH, 40V, 100A, 3-TO220	348	500:£0.5400 250:£0.5770 100:£0.6130 25:£0.7950 5:£0.9310

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CSD18504KCS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes