BSC600N25NS3 G

Mfr. #:: BSC600N25NS3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: BSC600N25NS3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: BSC600N25NS3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 250 V

Id - Continuous Drain Current:: 25 A

Rds On - Drain-Source Resistance:: 50 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 29 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Type:: OptiMOS 3 Power-Transistor

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 25 S

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 22 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: BSC600N25NS3GATMA1 BSC6N25NS3GXT SP000676402

Unit Weight:: 0.003527 oz

Tags: BSC600N25NS3G, BSC600N25NS3, BSC600N, BSC60, BSC6, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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BSC600N25NS3 G More Information

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
BSC600N25NS3GATMA1 DISTI # BSC600N25NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 25A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.4342
BSC600N25NS3GATMA1 DISTI # BSC600N25NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 25A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.6157 500:$1.9158 100:$2.3659 10:$2.8850 1:$3.2300
BSC600N25NS3GATMA1 DISTI # BSC600N25NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 25A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.6157 500:$1.9158 100:$2.3659 10:$2.8850 1:$3.2300
BSC600N25NS3 G DISTI # BSC600N25NS3 G	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 8-Pin TDSON T/R (Alt: BSC600N25NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSC600N25NS3GATMA1 DISTI # BSC600N25NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC600N25NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.3900 10000:$1.3900 20000:$1.2900 30000:$1.2900 50000:$1.1900
BSC600N25NS3GATMA1 DISTI # 79X1338	Infineon Technologies AG	MOSFET, N-CH, 250V, 25A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$2.8300 10:$2.4000 25:$2.2900 50:$2.1900 100:$2.0800 250:$1.9800 500:$1.7800 1000:$1.5000
BSC600N25NS3 G DISTI # 726-BSC600N25NS3GXT	Infineon Technologies AG	MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 RoHS: Compliant	99	1:$2.8300 10:$2.4000 100:$2.0800 250:$1.9800 500:$1.7800 1000:$1.5000 2500:$1.4200 5000:$1.3700
BSC600N25NS3GATMA1 DISTI # 726-BSC600N25NS3GATM	Infineon Technologies AG	MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$2.7000 10:$2.3000 100:$1.9900 250:$1.8900 500:$1.7000 1000:$1.4300 2500:$1.3600
BSC600N25NS3GATMA1 DISTI # 9064303P	Infineon Technologies AG	MOSFET N-CH 250V 25A OPTIMOS TDSON8 EP, RL	15	25:£1.8320 125:£1.4700 250:£1.3760 625:£1.2840
BSC600N25NS3G	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	4	4:$6.6000 2:$7.5000 1:$9.0000
BSC600N25NS3GATMA1 DISTI # 2432713RL	Infineon Technologies AG	MOSFET, N CH, 250V, 25A, TDSON-8 RoHS: Compliant	0	1:$4.4800 10:$3.8100 100:$3.2900
BSC600N25NS3GATMA1 DISTI # 2432713	Infineon Technologies AG	MOSFET, N CH, 250V, 25A, TDSON-8 RoHS: Compliant	0	1:$4.4800 10:$3.8100 100:$3.2900
BSC600N25NS3GATMA1 DISTI # 2432713	Infineon Technologies AG	MOSFET, N CH, 250V, 25A, TDSON-8 RoHS: Compliant	0	1:£2.9600 10:£2.2900 100:£1.8700

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Availability

Stock:: Available
On Order:: 1989
Enter Quantity:

Current price of BSC600N25NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.69~~; ~~$2.69~~

10: ~~$2.29~~; ~~$22.90~~

100: ~~$1.98~~; ~~$198.00~~

250: ~~$1.88~~; ~~$470.00~~

500: ~~$1.69~~; ~~$845.00~~

1000: ~~$1.42~~; ~~$1 420.00~~

2500: ~~$1.35~~; ~~$3 375.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes