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CGHV60040D

CGHV60040D
Mfr. #:
CGHV60040D
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGHV60040D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGHV60040D more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
18 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
50 V
Vgs - Gate-Source Breakdown Voltage:
-
Id - Continuous Drain Current:
3.2 A
Output Power:
40 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
-
Maximum Operating Temperature:
-
Pd - Power Dissipation:
-
Mounting Style:
SMD/SMT
Package / Case:
Die
Packaging:
Gel Pack
Application:
-
Configuration:
Dual
Height:
100 um
Length:
1800 um
Operating Frequency:
6 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
820 um
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Number of Channels:
2 Channel
Class:
-
Development Kit:
-
Fall Time:
-
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Rise Time:
-
Factory Pack Quantity:
10
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
-
Part # Aliases:
CGHV60040D-GP4
Tags
CGHV600, CGHV6, CGHV, CGH
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 50V DIE
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
CGHV600 6GHz GaN HEMTs
Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.Learn More
Part # Mfg. Description Stock Price
CGHV60040D-GP4
DISTI # CGHV60040D-GP4-ND		WolfspeedRF MOSFET HEMT 50V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray		550In Stock
  • 10:$42.3360
CGHV60040D
DISTI # 941-CGHV60040D		Cree, Inc.RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
RoHS: Compliant		200
  • 10:$42.3400
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Availability
Stock:
190
On Order:
2173
Enter Quantity:
Current price of CGHV60040D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
10
$39.18
$391.80
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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