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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Part # | Mfg. | Description | Stock | Price |
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FQU2N60CTU DISTI # FQU2N60CTU-ND | ON Semiconductor | MOSFET N-CH 600V 1.9A IPAK RoHS: Compliant Min Qty: 1 Container: Tube | 37In Stock |
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FQI12N60CTU DISTI # FQI12N60CTU-ND | ON Semiconductor | MOSFET N-CH 600V 12A I2PAK RoHS: Compliant Min Qty: 1000 Container: Tube | Limited Supply - Call | |
FQU2N60CTU DISTI # FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 5040 Container: Tube | Americas - 430 |
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FQU2N60CTU DISTI # FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 834 Container: Bulk | Americas - 0 |
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FQU2N60CTU DISTI # FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 1 | Europe - 0 |
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FQU2N60CTU DISTI # FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 5040 | Asia - 0 |
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FQU2N60CTU. DISTI # 60AC9683 | ON Semiconductor | Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:600V,Operating Temperature Max:150°C,Product Range:QFET Series,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes | 0 |
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FQU2N60CTU DISTI # 512-FQU2N60CTU | ON Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series RoHS: Compliant | 4617 |
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FQI12N60CTU DISTI # 512-FQI12N60CTU | ON Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series RoHS: Compliant | 0 | |
FQI12N60CTU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2882 |
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FQU2N60CTU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 42125 |
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FQU2N60CTU DISTI # 6715357 | ON Semiconductor | MOSFET N-CHANNEL 600V 1.9A IPAK, PK | 80 |
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Image | Part # | Description |
---|---|---|
Mfr.#: 2N6052 OMO.#: OMO-2N6052 |
Darlington Transistors PNP Pwr Darlington | |
Mfr.#: 2N6283 OMO.#: OMO-2N6283 |
Darlington Transistors . . | |
Mfr.#: 2N6014 OMO.#: OMO-2N6014-1190 |
Bipolar Junction Transistor, NPN Type, TO-92VAR | |
Mfr.#: 2N601A OMO.#: OMO-2N601A-1190 |
New and Original | |
Mfr.#: 2N6298 OMO.#: OMO-2N6298-MICROSEMI |
Trans Darlington PNP 60V 8A 3-Pin(2+Tab) TO-66 | |
Mfr.#: 2N6585 OMO.#: OMO-2N6585-1190 |
New and Original | |
Mfr.#: 2N65F OMO.#: OMO-2N65F-1190 |
New and Original | |
Mfr.#: 2N6028G OMO.#: OMO-2N6028G-ON-SEMICONDUCTOR |
THYRISTOR PROG UNIJUNCT 40V TO92 | |
Mfr.#: 2N6505TG OMO.#: OMO-2N6505TG-LITTELFUSE |
SCRs 100V 25A | |
Mfr.#: 2N6792TX OMO.#: OMO-2N6792TX-1190 |
Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |