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FGH40N60UFDTU

FGH40N60UFDTU
Mfr. #:
FGH40N60UFDTU
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 600V 40A Field Stop
Lifecycle:
New from this manufacturer.
Datasheet:
FGH40N60UFDTU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FGH40N60UFDTU more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Maximum Gate Emitter Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
FGH40N60UFD
Packaging:
Tube
Continuous Collector Current Ic Max:
80 A
Height:
20.82 mm
Length:
15.87 mm
Width:
4.82 mm
Brand:
ON Semiconductor / Fairchild
Product Type:
IGBT Transistors
Factory Pack Quantity:
450
Subcategory:
IGBTs
Unit Weight:
0.225401 oz
Tags
FGH40N60UFDT, FGH40N60UFD, FGH40N60U, FGH40N60, FGH40N6, FGH40N, FGH40, FGH4, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***-Wing Technology
FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
*** Source Electronics
IGBT 600V 80A 290W TO247 / Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40N60SFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
***th Star Micro
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,80A,TO247AD; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AD; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
***ical
Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:
***ow.cn
Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***ment14 APAC
IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Part # Mfg. Description Stock Price
FGH40N60UFDTU
DISTI # V99:2348_06359920		ON SemiconductorNCH ,600V, 40A, FS PLANAR IGBT437
  • 500:$1.7190
  • 250:$1.9440
  • 100:$2.0230
  • 10:$2.3060
  • 1:$2.6269
FGH40N60UFDTU
DISTI # FGH40N60UFDTU-ND		ON SemiconductorIGBT 600V 80A 290W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		386In Stock
  • 1350:$1.6905
  • 900:$2.0045
  • 450:$2.2339
  • 10:$2.8740
  • 1:$3.2000
FGH40N60UFDTU
DISTI # 31043773		ON SemiconductorNCH ,600V, 40A, FS PLANAR IGBT470
  • 7:$1.5344
FGH40N60UFDTU
DISTI # 26703280		ON SemiconductorNCH ,600V, 40A, FS PLANAR IGBT437
  • 250:$1.9440
  • 100:$2.0230
  • 10:$2.3060
  • 4:$2.6269
FGH40N60UFDTU
DISTI # FGH40N60UFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FGH40N60UFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 350
  • 450:$1.4900
  • 452:$1.3900
  • 902:$1.3900
  • 2250:$1.3900
  • 4500:$1.3900
FGH40N60UFDTU
DISTI # FGH40N60UFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Rail (Alt: FGH40N60UFDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.2900
FGH40N60UFDTU
DISTI # 41T0513		ON SemiconductorIGBT,N CHANNEL,W DIODE,600V,80A,TO247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):600V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Product Range:-,MSL:- , RoHS Compliant: Yes668
  • 1:$3.2400
  • 10:$2.7700
  • 25:$2.6500
  • 50:$2.5300
  • 100:$2.4200
  • 250:$2.2900
  • 500:$2.0700
FGH40N60UFDTU
DISTI # 512-FGH40N60UFDTU		ON SemiconductorIGBT Transistors 600V 40A Field Stop
RoHS: Compliant		565
  • 1:$3.0500
  • 10:$2.5900
  • 100:$2.2500
  • 250:$2.1300
  • 500:$1.9100
  • 1000:$1.6100
  • 2500:$1.5300
  • 5000:$1.4800
FGH40N60UFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB
RoHS: Compliant		13545
  • 1000:$1.8800
  • 500:$1.9800
  • 100:$2.0600
  • 25:$2.1500
  • 1:$2.3200
FGH40N60UFDTU
DISTI # 7599273		ON SemiconductorTRANSISTOR IGBT N-CH 600V 80A TO247, EA162
  • 1:£3.8600
  • 6:£2.4300
  • 15:£2.3000
FGH40N60UFDTU
DISTI # 7599273P		ON SemiconductorTRANSISTOR IGBT N-CH 600V 80A TO247, TU594
  • 6:£2.4300
  • 15:£2.3000
FGH40N60UFDTU
DISTI # FGH40N60UFDTU		ON SemiconductorTransistor: IGBT,600V,40A,116W,TO247291
  • 1:$5.4900
  • 3:$4.7300
  • 10:$3.8000
  • 30:$3.4100
FGH40N60UFDTUON SemiconductorINSTOCK6685
    FGH40N60UFDTU
    DISTI # C1S226600432155    		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		470
    • 120:$2.6200
    • 60:$2.8600
    • 30:$3.4700
    FGH40N60UFDTU
    DISTI # 1885747    		ON SemiconductorIGBT,N CH,W DIODE,600V,80A,TO247
    RoHS: Compliant    		668
    • 1:$4.8300
    • 10:$4.1000
    • 100:$3.5600
    • 250:$3.3800
    • 500:$3.0300
    FGH40N60UFDTU
    DISTI # 1885747    		ON SemiconductorIGBT,N CH,W DIODE,600V,80A,TO247
    RoHS: Compliant    		668
    • 1:£2.6500
    • 10:£2.0000
    • 100:£1.7300
    • 250:£1.6400
    • 500:£1.4700
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    OMO.#: OMO-APT40DQ60BG

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    FFSH10120A

    Mfr.#: FFSH10120A

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    		 Schottky Diodes & Rectifiers 1200V 10A SIC SBD
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    Mfr.#: CC0603KRX7R9BB104

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    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
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    		 MELF Resistors 0.4W 33ohms 1% 0204 MELF 200V 50ppm
    AC102015

    Mfr.#: AC102015

    OMO.#: OMO-AC102015

    		 Sockets & Adapters ICD4 RJ45 Universal Adapter Board
    APT40DQ60BG

    Mfr.#: APT40DQ60BG

    OMO.#: OMO-APT40DQ60BG-MICROSEMI

    		 Rectifiers
    SN74HC14NS

    Mfr.#: SN74HC14NS

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    Availability
    Stock:
    871
    On Order:
    2854
    Enter Quantity:
    Current price of FGH40N60UFDTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.83
    $3.83
    10
    $3.25
    $32.50
    100
    $2.82
    $282.00
    250
    $2.67
    $667.50
    500
    $2.40
    $1 200.00
    1000
    $2.07
    $2 070.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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