APT60GA60JD60

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

IGBT Modules

RoHS:

Y

Product:

IGBT Silicon Modules

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

2 V

Continuous Collector Current at 25 C:

112 A

Gate-Emitter Leakage Current:

100 nA

Pd - Power Dissipation:

356 W

Package / Case:

SOT-227-4

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Tube

Height:

9.6 mm

Length:

38.2 mm

Operating Temperature Range:

- 55 C to + 150 C

Width:

25.4 mm

Brand:

Microchip / Microsemi

Mounting Style:

Chassis Mount

Maximum Gate Emitter Voltage:

30 V

Product Type:

IGBT Modules

Factory Pack Quantity:

1

Subcategory:

IGBTs

Tradename:

POWER MOS 8, ISOTOP

Unit Weight:

1.058219 oz

Tags

APT60G, APT60, APT6, APT