QPD1008L

QPD1008L
Mfr. #:
QPD1008L
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
Lifecycle:
New from this manufacturer.
Datasheet:
QPD1008L Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
QPD1008L more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
17.5 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
50 V
Vgs - Gate-Source Breakdown Voltage:
145 V
Id - Continuous Drain Current:
4 A
Output Power:
162 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
127 W
Mounting Style:
Screw Mount
Package / Case:
NI-360
Packaging:
Tray
Configuration:
Single
Operating Frequency:
3.2 GHz
Operating Temperature Range:
- 40 C to + 85 C
Series:
QPD
Brand:
Qorvo
Development Kit:
QPD1008LPCB401
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
25
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 2.8 V
Tags
QPD100, QPD10, QPD1, QPD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Transistor, DC - 3.2 GHz, 125 W, 50 V, GaN, Eared NI-360
***hardson RFPD
RF POWER TRANSISTOR
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
QPD1008L
DISTI # QPD1008L-ND
RF Micro Devices IncRF TRANSISTOR 125W 50V NI-360
RoHS: Compliant
Container: Bulk
Limited Supply - Call
    QPD1008L
    DISTI # 772-QPD1008L
    QorvoRF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
    RoHS: Compliant
    43
    • 1:$200.0000
    • 25:$173.0000
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    Availability
    Stock:
    Available
    On Order:
    2500
    Enter Quantity:
    Current price of QPD1008L is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $200.00
    $200.00
    25
    $173.00
    $4 325.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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