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IXFX360N15T2

IXFX360N15T2
Mfr. #:
IXFX360N15T2
Manufacturer:
Littelfuse
Description:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IXFX360N15T2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXFX360N15T2 more Information
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
FETs - Single
Series
GigaMOS
Product
MOSFET Gate Drivers
Type
GigaMOS Trench T2 HiperFet
Packaging
Tube
Mounting-Style
Through Hole
Tradename
HiPerFET
Package-Case
PLUS-247
Operating-Temperature
-55°C ~ 175°C (TJ)
Mounting-Type
Through Hole
Supplier-Device-Package
PLUS247-3
Number-of-Outputs
1
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
1670W
Drain-to-Source-Voltage-Vdss
150V
Input-Capacitance-Ciss-Vds
47500pF @ 25V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
360A (Tc)
Rds-On-Max-Id-Vgs
4 mOhm @ 60A, 10V
Vgs-th-Max-Id
5V @ 8mA
Gate-Charge-Qg-Vgs
715nC @ 10V
Pd-Power-Dissipation
1670 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Output-Voltage
150 V
Operating-Supply-Current
100 A
Output-Current
360 A
Fall-Time
265 ns
Rise-Time
170 ns
Number-of-Drivers
1 Driver
Maximum-Turn-Off-Delay-Time
115 ns
Maximum-Turn-On-Delay-Time
50 ns
Tags
IXFX3, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
***i-Key
MOSFET N-CH 150V 360A PLUS247
***ure Electronics
150V 360A 0.004 Ohm N-Ch PLUS247 HiperFET
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Part # Mfg. Description Stock Price
IXFX360N15T2
DISTI # V99:2348_15878492		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 500:$12.8800
  • 250:$14.6000
  • 100:$16.8000
  • 50:$17.2300
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # IXFX360N15T2-ND		IXYS CorporationMOSFET N-CH 150V 360A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 120:$18.3707
  • 30:$19.7660
  • 1:$23.2500
IXFX360N15T2
DISTI # 30695442		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # 747-IXFX360N15T2		IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		73
  • 1:$24.3100
  • 5:$23.7600
  • 10:$22.4900
  • 25:$21.1400
  • 50:$19.5600
  • 100:$19.2100
  • 250:$16.3800
  • 500:$14.2700
IXFX360N15T2
DISTI # C1S331700117829		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
Image Part # Description
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2

 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T

 MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2-IXYS-CORPORATION

 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T-IXYS-CORPORATION

 MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of IXFX360N15T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$19.32
$19.32
10
$18.35
$183.54
100
$17.39
$1 738.80
500
$16.42
$8 211.00
1000
$15.46
$15 456.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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